Inventor · disambiguated record
King Wai Kelwin Ko
Also filed as: KO KING WAI KELWIN
13 granted patents·2 pending applications·45 citations·filing 1999–2012
89Inventor score
Top patents by PatentIndex Score
15 records- 0160US6489253B1Method of forming a void-free interlayer dielectric (ILD0) for 0.18-μm flash memory technology and semiconductor device thereby formedADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 3, 2002·6 cites·10 claims
- 0253US6472327B2Method and system for etching tunnel oxide to reduce undercutting during memory array fabricationADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 29, 2002·6 cites·1 claims
- 0350US8507969B2Method and system for providing contact to a first polysilicon layer in a flash memory deviceCHANG MARK S·Filed 2012·Granted Aug 13, 2013·0 cites·12 claims
- 0450US8329530B1Method and system for providing contact to a first polysilicon layer in a flash memory deviceCHANG MARK S·Filed 2012·Granted Dec 11, 2012·0 cites·9 claims
- 0548US6448594B1Method and system for processing a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 10, 2002·3 cites·1 claims
- 0648US6445051B1Method and system for providing contacts with greater tolerance for misalignment in a flash memoryADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 3, 2002·3 cites·9 claims
- 0746US7226839B1Method and system for improving the topography of a memory arraySPANSION LLC·Filed 2004·Granted Jun 5, 2007·2 cites·12 claims
- 0845US6130169AEfficient in-situ resist strip process for heavy polymer metal etchADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 10, 2000·14 cites·10 claims
- 0941US6627973B1Void-free interlayer dielectric (ILD0) for 0.18-micron flash memory semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 30, 2003·0 cites·15 claims
- 1040US6333263B1Method of reducing stress corrosion induced voiding of patterned metal layersADVANCED MICRO DEVICES INC·Filed 1999·Granted Dec 25, 2001·7 cites·10 claims
- 1137US2001007791A1Method of reducing stress corrosion induced voiding of patterned metal layersADVANCED MICRO DEVICES INC·Filed 2001·Application pending·0 cites
- 1236US8183619B1Method and system for providing contact to a first polysilicon layer in a flash memory deviceCHANG MARK S·Filed 2000·Granted May 22, 2012·0 cites·1 claims
- 1336US6603211B2Method and system for providing a robust alignment mark at thin oxide layersADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 5, 2003·0 cites·6 claims
- 1434US6251776B1Plasma treatment to reduce stress corrosion induced voiding of patterned metal layersADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 26, 2001·4 cites·15 claims
- 1528US2001045646A1Silicon oxynitride arc for metal patterningFiled 1999·Application pending·0 cites
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