Inventor · disambiguated record
Mohamed N. Darwish
Also filed as: DARWISH MOHAMED · DARWISH MOHAMED N
126 granted patents·27 pending applications·3,400 citations·filing 1990–2025
99Inventor score
Files withMAXPOWER SEMICONDUCTOR INC77SILICONIX INC35DARWISH MOHAMED N19ZENG JUN7NAT SEMICONDUCTOR CORP4
Top patents by PatentIndex Score
153 records- 0199US8704295B1Schottky and MOSFET+Schottky structures, devices, and methodsDARWISH MOHAMED N·Filed 2011·Granted Apr 22, 2014·76 cites·20 claims
- 0299US6239463B1Low resistance power MOSFET or other device containing silicon-germanium layerSILICONIX INC·Filed 1997·Granted May 29, 2001·305 cites·60 claims
- 0399US6049108ATrench-gated MOSFET with bidirectional voltage clampingSILICONIX INC·Filed 1997·Granted Apr 11, 2000·511 cites·14 claims
- 0498US8319278B1Power device structures and methods using empty space zonesZENG JUN·Filed 2010·Granted Nov 27, 2012·61 cites·18 claims
- 0598US8076719B2Semiconductor device structures and related processesZENG JUN·Filed 2009·Granted Dec 13, 2011·133 cites·6 claims
- 0698US7964913B2Power MOS transistor incorporating fixed charges that balance the charge in the drift regionMAXPOWER SEMICONDUCTOR INC·Filed 2008·Granted Jun 21, 2011·56 cites·22 claims
- 0798US7843004B2Power MOSFET with recessed field plateMAXPOWER SEMICONDUCTOR INC·Filed 2007·Granted Nov 30, 2010·56 cites·27 claims
- 0898US5689128AHigh density trenched DMOS transistorSILICONIX INC·Filed 1995·Granted Nov 18, 1997·242 cites·7 claims
- 0997US9093522B1Vertical power MOSFET with planar channel and vertical field plateMAXPOWER SEMICONDUCTOR INC·Filed 2014·Granted Jul 28, 2015·60 cites·24 claims
- 1097US8390060B2Power semiconductor devices, structures, and related methodsDARWISH MOHAMED N·Filed 2011·Granted Mar 5, 2013·27 cites·22 claims
- 1197US7795675B2Termination for trench MIS deviceSILICONIX INC·Filed 2005·Granted Sep 14, 2010·99 cites·10 claims
- 1297US6555873B2High-voltage lateral transistor with a multi-layered extended drain structurePOWER INTEGRATIONS INC·Filed 2001·Granted Apr 29, 2003·128 cites·56 claims
- 1397US6084264ATrench MOSFET having improved breakdown and on-resistance characteristicsSILICONIX INC·Filed 1998·Granted Jul 4, 2000·209 cites·14 claims
- 1496US5895952ATrench MOSFET with multi-resistivity drain to provide low on-resistanceSILICONIX INC·Filed 1996·Granted Apr 20, 1999·162 cites·36 claims
- 1595US8564057B1Power devices, structures, components, and methods using lateral drift, fixed net charge, and shieldDARWISH MOHAMED N·Filed 2010·Granted Oct 22, 2013·19 cites·10 claims
- 1695US8354711B2Power MOSFET and its edge terminationMAXPOWER SEMICONDUCTOR INC·Filed 2010·Granted Jan 15, 2013·23 cites·20 claims
- 1794US9024379B2Trench transistors and methods with low-voltage-drop shunt to body diodeMAXPOWER SEMICONDUCTOR INC·Filed 2013·Granted May 5, 2015·11 cites·20 claims
- 1894US8680607B2Trench gated power device with multiple trench width and its fabrication processZENG JUN·Filed 2012·Granted Mar 25, 2014·15 cites·20 claims
- 1994US8420483B2Method of manufacture for a semiconductor deviceDARWISH MOHAMED N·Filed 2008·Granted Apr 16, 2013·13 cites·9 claims
- 2093US8344451B2Semiconductor deviceMAXPOWER SEMICONDUCTOR INC·Filed 2008·Granted Jan 1, 2013·11 cites·9 claims
- 2193US7910439B2Super self-aligned trench MOSFET devices, methods, and systemsMAXPOWER SEMICONDUCTOR INC·Filed 2009·Granted Mar 22, 2011·27 cites·20 claims
- 2293US6798020B2High-voltage lateral transistor with a multi-layered extended drain structurePOWER INTEGRATIONS INC·Filed 2003·Granted Sep 28, 2004·55 cites·22 claims
- 2392US8058682B2Semiconductor deviceDARWISH MOHAMED N·Filed 2008·Granted Nov 15, 2011·9 cites·47 claims
- 2492US5674766AMethod of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layerSILICONIX INC·Filed 1995·Granted Oct 7, 1997·93 cites·21 claims
- 2591US6764906B2Method for making trench mosfet having implanted drain-drift regionSILICONIX INC·Filed 2002·Granted Jul 20, 2004·44 cites·28 claims
- 2691US6140678ATrench-gated power MOSFET with protective diodeSILICONIX INC·Filed 1997·Granted Oct 31, 2000·92 cites·14 claims
- 2790US7009247B2Trench MIS device with thick oxide layer in bottom of gate contact trenchSILICONIX INC·Filed 2003·Granted Mar 7, 2006·46 cites·3 claims
- 2889US11316021B2High density power device with selectively shielded recessed field plateMAXPOWER SEMICONDUCTOR INC·Filed 2020·Granted Apr 26, 2022·2 cites·17 claims
- 2989US9842917B2Methods of operating power semiconductor devices and structuresMAXPOWER SEMICONDUCTOR INC·Filed 2016·Granted Dec 12, 2017·4 cites·20 claims
- 3089US9761702B2Power MOSFET having planar channel, vertical current path, and top drain electrodeMAXPOWER SEMICONDUCTOR INC·Filed 2016·Granted Sep 12, 2017·6 cites·20 claims
- 3189US9461127B2Vertical power MOSFET having planar channel and its method of fabricationMAXPOWER SEMICONDUCTOR INC·Filed 2015·Granted Oct 4, 2016·6 cites·32 claims
- 3289US8581341B2Power MOSFET with embedded recessed field plate and methods of fabricationDARWISH MOHAMED N·Filed 2011·Granted Nov 12, 2013·10 cites·18 claims
- 3389US8466025B2Semiconductor device structures and related processesZENG JUN·Filed 2011·Granted Jun 18, 2013·7 cites·7 claims
- 3489US6008520ATrench MOSFET with heavily doped delta layer to provide low on- resistanceSILICONIX INC·Filed 1997·Granted Dec 28, 1999·84 cites·26 claims
- 3588US10720511B2Trench transistors and methods with low-voltage-drop shunt to body diodeMAXPOWER SEMICONDUCTOR INC·Filed 2018·Granted Jul 21, 2020·2 cites·20 claims
- 3688US9224855B2Trench gated power device with multiple trench width and its fabrication processMAXPOWER SEMICONDUCTOR INC·Filed 2014·Granted Dec 29, 2015·7 cites·9 claims
- 3788US9184248B2Vertical power MOSFET having planar channel and its method of fabricationMAXPOWER SEMICONDUCTOR INC·Filed 2015·Granted Nov 10, 2015·6 cites·21 claims
- 3888US8546893B2Devices, components and methods combining trench field plates with immobile electrostatic chargeDARWISH MOHAMED N·Filed 2011·Granted Oct 1, 2013·7 cites·20 claims
- 3988US8304329B2Power device structures and methodsZENG JUN·Filed 2009·Granted Nov 6, 2012·9 cites·7 claims
- 4088US7923804B2Edge termination with improved breakdown voltageMAXPOWER SEMICONDUCTOR INC·Filed 2009·Granted Apr 12, 2011·13 cites·20 claims
- 4187US8659074B2Semiconductor deviceDARWISH MOHAMED N·Filed 2008·Granted Feb 25, 2014·5 cites·17 claims
- 4286US6921697B2Method for making trench MIS device with reduced gate-to-drain capacitanceSILICONIX INC·Filed 2002·Granted Jul 26, 2005·31 cites·7 claims
- 4386US6569738B2Process for manufacturing trench gated MOSFET having drain/drift regionSILICONIX INC·Filed 2001·Granted May 27, 2003·31 cites·6 claims
- 4485US8378416B2MOS-gated power devices, methods, and integrated circuitsMAXPOWER SEMICONDUCTOR INC·Filed 2009·Granted Feb 19, 2013·7 cites·23 claims
- 4585US6927451B1Termination for trench MIS device having implanted drain-drift regionSILICONIX INC·Filed 2004·Granted Aug 9, 2005·29 cites·8 claims
- 4684US9859400B2Trench transistors and methods with low-voltage-drop shunt to body diodeMAXPOWER SEMICONDUCTOR INC·Filed 2015·Granted Jan 2, 2018·2 cites·20 claims
- 4784US7416947B2Method of fabricating trench MIS device with thick oxide layer in bottom of trenchSILICONIX INC·Filed 2006·Granted Aug 26, 2008·9 cites·17 claims
- 4884US7033876B2Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the sameSILICONIX INC·Filed 2002·Granted Apr 25, 2006·28 cites·15 claims
- 4983US9076861B2Schottky and MOSFET+Schottky structures, devices, and methodsMAXPOWER SEMICONDUCTOR INC·Filed 2014·Granted Jul 7, 2015·5 cites·19 claims
- 5083US8907412B2Semiconductor deviceMAXPOWER SEMICONDUCTOR INC·Filed 2013·Granted Dec 9, 2014·2 cites·17 claims
Showing the top 50 of 153 patent records by PatentIndex Score.
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