Inventor · disambiguated record
Michael P. Violette
Also filed as: VIOLETTE MICHAEL · VIOLETTE MICHAEL P
123 granted patents·11 pending applications·1,499 citations·filing 1992–2025
99Inventor score
Top patents by PatentIndex Score
134 records- 0199US8369139B2Non-volatile memory with resistive access componentMICRON TECHNOLOGY INC·Filed 2011·Granted Feb 5, 2013·51 cites·17 claims
- 0298US7948008B2Floating body field-effect transistors, and methods of forming floating body field-effect transistorsMICRON TECHNOLOGY INC·Filed 2007·Granted May 24, 2011·116 cites·30 claims
- 0397US7071043B2Methods of forming a field effect transistor having source/drain material over insulative materialMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 4, 2006·114 cites·19 claims
- 0497US6936507B2Method of forming field effect transistorsMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 30, 2005·80 cites·9 claims
- 0596US7852658B2Phase change memory cell with constriction structureMICRON TECHNOLOGY INC·Filed 2008·Granted Dec 14, 2010·34 cites·2 claims
- 0695US8883602B2Memory devices having electrodes comprising nanowires, systems including same and methods of forming sameLIU JUN·Filed 2010·Granted Nov 11, 2014·10 cites·22 claims
- 0795US8802520B2Method of forming a field effect transistor having source/drain material over insulative materialMICRON TECHNOLOGY INC·Filed 2013·Granted Aug 12, 2014·12 cites·25 claims
- 0895US7859036B2Memory devices having electrodes comprising nanowires, systems including same and methods of forming sameMICRON TECHNOLOGY INC·Filed 2007·Granted Dec 28, 2010·24 cites·21 claims
- 0995US7332789B2Isolation trenches for memory devicesMICRON TECHNOLOGY INC·Filed 2006·Granted Feb 19, 2008·24 cites·23 claims
- 1094US7439157B2Isolation trenches for memory devicesMICRON TECHNOLOGY INC·Filed 2005·Granted Oct 21, 2008·24 cites·85 claims
- 1194US6979601B2Methods for fabricating fuses for use in semiconductor devices and semiconductor devices including such fusesMICRON TECHNOLOGY INC·Filed 2003·Granted Dec 27, 2005·55 cites·34 claims
- 1292US7332408B2Isolation trenches for memory devicesMICRON TECHNOLOGY INC·Filed 2004·Granted Feb 19, 2008·46 cites·54 claims
- 1391US7961507B2Non-volatile memory with resistive access componentMICRON TECHNOLOGY INC·Filed 2008·Granted Jun 14, 2011·17 cites·32 claims
- 1491US2025344512A1Microelectronic devices, and related memory devices and integrated circuit devicesLODESTAR LICENSING GROUP LLC·Filed 2025·Application pending·0 cites
- 1590US9281478B2Phase change memory cell with constriction structureMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 8, 2016·4 cites·15 claims
- 1688US6879018B2Fuse for use in a semiconductor device, and semiconductor devices including the fuseMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 12, 2005·32 cites·41 claims
- 1787US10199227B2Method for fabricating a metal high-k gate stack for a buried recessed access deviceSONY CORP·Filed 2017·Granted Feb 5, 2019·3 cites·8 claims
- 1887US8809108B2Phase change memory cell with constriction structureLIU JUN·Filed 2010·Granted Aug 19, 2014·5 cites·13 claims
- 1987US8440515B2Method of forming a field effect transistorTANG SANH D·Filed 2008·Granted May 14, 2013·8 cites·18 claims
- 2087US8049298B2Isolation trenches for memory devicesMICRON TECHNOLOGY INC·Filed 2010·Granted Nov 1, 2011·6 cites·11 claims
- 2187US7465616B2Method of forming a field effect transistorMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 16, 2008·26 cites·24 claims
- 2286US12382726B2Capacitor structuresLODESTAR LICENSING GROUP LLC·Filed 2024·Granted Aug 5, 2025·0 cites·19 claims
- 2386US7892943B2Isolation trenches for memory devicesMICRON TECHNOLOGY INC·Filed 2007·Granted Feb 22, 2011·9 cites·14 claims
- 2486US7348236B2Formation of memory cells and select gates of NAND memory arraysMICRON TECHNOLOGY INC·Filed 2004·Granted Mar 25, 2008·26 cites·34 claims
- 2586US5945350AMethods for use in formation of titanium nitride interconnects and interconnects formed using sameMICRON TECHNOLOGY INC·Filed 1996·Granted Aug 31, 1999·64 cites·28 claims
- 2685US6323534B1Fuse for use in a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 27, 2001·50 cites·89 claims
- 2784US9099309B2Method providing an epitaxial growth having a reduction in defects and resulting structureMICRON TECHNOLOGY INC·Filed 2013·Granted Aug 4, 2015·5 cites·19 claims
- 2883US10008664B2Phase change memory cell with constriction structureMICRON TECHNOLOGY INC·Filed 2016·Granted Jun 26, 2018·2 cites·17 claims
- 2982US2025343083A1Memory device including circuitry under bond padsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 3081US11935883B2Capacitor structures and apparatus containing such capacitor structuresMICRON TECHNOLOGY INC·Filed 2023·Granted Mar 19, 2024·0 cites·20 claims
- 3181US10797237B2Resistive memory architectures with multiple memory cells per access deviceOVONYX MEMORY TECH LLC·Filed 2019·Granted Oct 6, 2020·2 cites·20 claims
- 3281US6277674B1Semiconductor fuses, methods of using the same, methods of making the same, and semiconductor devices containing the sameMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 21, 2001·39 cites·48 claims
- 3380US6410367B2Fuse for use in a semiconductor device, and semiconductor devices including the fuseMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 25, 2002·18 cites·33 claims
- 3479US11424169B2Memory device including circuitry under bond padsMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 23, 2022·2 cites·17 claims
- 3579US9666800B2Buried low-resistance metal word lines for cross-point variable-resistance material memoriesMICRON TECHNOLOGY INC·Filed 2015·Granted May 30, 2017·3 cites·11 claims
- 3679US5817580AMethod of etching silicon dioxideMICRON TECHNOLOGY INC·Filed 1996·Granted Oct 6, 1998·48 cites·33 claims
- 3778US8502182B2Memory device having self-aligned cell structureLIU JUN·Filed 2009·Granted Aug 6, 2013·4 cites·18 claims
- 3878US7470576B2Methods of forming field effect transistor gate linesMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 30, 2008·13 cites·9 claims
- 3978US6951790B1Method of forming select lines for NAND memory devicesMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 4, 2005·19 cites·19 claims
- 4078US5741735ALocal ground and VCC connection in an SRAM cellMICRON TECHNOLOGY INC·Filed 1996·Granted Apr 21, 1998·50 cites·14 claims
- 4177US7118950B2Method of forming a field effect transistorMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 10, 2006·12 cites·12 claims
- 4276US10090464B2Buried low-resistance metal word lines for cross-point variable-resistance material memoriesMICRON TECHNOLOGY INC·Filed 2017·Granted Oct 2, 2018·2 cites·9 claims
- 4376US8535992B2Thyristor random access memory device and methodTANG SANH D·Filed 2010·Granted Sep 17, 2013·3 cites·15 claims
- 4475US8830738B2Non-volatile memory with resistive access componentMICRON TECHNOLOGY INC·Filed 2013·Granted Sep 9, 2014·2 cites·20 claims
- 4575US8212281B23-D and 3-D schottky diode for cross-point, variable-resistance material memories, processes of forming same, and methods of using sameLIU JUN·Filed 2008·Granted Jul 3, 2012·4 cites·16 claims
- 4675US5696025AMethod of forming guard ringed schottky diodeMICRON TECHNOLOGY INC·Filed 1996·Granted Dec 9, 1997·35 cites·17 claims
- 4775US2022271224A1Resistive memory architectures with multiple memory cells per access deviceOVONYX MEMORY TECH LLC·Filed 2022·Application pending·0 cites
- 4875US2025267860A1Apparatus having transistors with raised extension regions and semiconductor finsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4974US2021193916A1Phase change memory cell with constriction structureMICRON TECHNOLOGY INC·Filed 2020·Application pending·0 cites
- 5073US12362244B2Memory device including circuitry under bond padsMICRON TECHNOLOGY INC·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
Showing the top 50 of 134 patent records by PatentIndex Score.
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