Inventor · disambiguated record
Giovanna Dalla Libera
Also filed as: LIBERA GIOVANNA DALLA
16 granted patents·2 pending applications·197 citations·filing 1999–2001
93Inventor score
Files withST MICROELECTRONICS SRL17
Top patents by PatentIndex Score
18 records- 0189US6350652B1Process for manufacturing nonvolatile memory cells with dimensional control of the floating gate regionsST MICROELECTRONICS SRL·Filed 2000·Granted Feb 26, 2002·55 cites·16 claims
- 0274US6281077B1Method for manufacturing electronic devices comprising non-volatile memory cells and LV transistors with salicided junctionsST MICROELECTRONICS SRL·Filed 1999·Granted Aug 28, 2001·27 cites·13 claims
- 0373US6221717B1EEPROM memory cell comprising a selection transistor with threshold voltage adjusted by implantation, and related manufacturing processST MICROELECTRONICS SRL·Filed 1999·Granted Apr 24, 2001·31 cites·9 claims
- 0470US6420769B2Method for manufacturing electronic devices having HV transistors and LV transistors with salicided junctionsST MICROELECTRONICS SRL·Filed 2001·Granted Jul 16, 2002·13 cites·12 claims
- 0562US6251728B1Method for manufacturing electronic devices having HV transistors and LV transistors with salicided junctionsST MICROELECTRONICS SRL·Filed 1999·Granted Jun 26, 2001·17 cites·12 claims
- 0660US6351008B1Method for manufacturing electronic devices having non-volatile memory cells and LV transistors with salicided junctionsST MICROELECTRONICS SRL·Filed 1999·Granted Feb 26, 2002·17 cites·8 claims
- 0757US6380034B1Process for manufacturing memory cells with dimensional control of the floating gate regionsST MICROELECTRONICS SRL·Filed 2000·Granted Apr 30, 2002·8 cites·19 claims
- 0855US6274411B1Method for manufacturing electronic devices, comprising non-salicided non-volatile memory cells, non-salicided HV transistors, and LV transistors with salicided junctions with few masksST MICROELECTRONICS SRL·Filed 1999·Granted Aug 14, 2001·14 cites·19 claims
- 0945US6396101B2Method for manufacturing electronic devices comprising non-volatile memory cells and LV transistors with salicided junctionsST MICROELECTRONICS SRL·Filed 2001·Granted May 28, 2002·2 cites·7 claims
- 1044US6414349B1High efficiency memory deviceST MICROELECTRONICS SRL·Filed 2000·Granted Jul 2, 2002·2 cites·18 claims
- 1144US6340828B1Process for manufacturing nonvolatile memory cells with dimensional control of the floating gate regionsST MICROELECTRONICS SRL·Filed 2000·Granted Jan 22, 2002·2 cites·20 claims
- 1242US6437395B2Process for the manufacturing of an electrically programmable non-volatile memory deviceST MICROELECTRONICS SRL·Filed 2001·Granted Aug 20, 2002·1 cites·11 claims
- 1341US6240011B1Eeprom cell with improved current performanceST MICROELECTRONICS SRL·Filed 2000·Granted May 29, 2001·1 cites·11 claims
- 1440US6548354B2Process for producing a semiconductor memory device comprising mass-storage memory cells and shielded memory cells for storing reserved informationST MICROELECTRONICS SRL·Filed 2001·Granted Apr 15, 2003·1 cites·22 claims
- 1538US6329254B1Memory cell of the EEPROM type having its threshold adjusted by implantation, and fabrication methodST MICROELECTRONICS SRL·Filed 1999·Granted Dec 11, 2001·6 cites·17 claims
- 1636US2001005333A1Non-volatile memory structure and corresponding manufacturing processST MICROELECTRONICS SRL·Filed 2001·Application pending·0 cites
- 1733US2001022380A1Integrated MOS transistor with a high threshold voltage and low multiplication coefficientFiled 2000·Application pending·0 cites
- 1830US6642582B1Circuit structure with a parasitic transistor having high threshold voltageST MICROELECTRONICS SRL·Filed 1999·Granted Nov 4, 2003·0 cites·23 claims
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