Inventor · disambiguated record
Yu-Rung Hsu
Also filed as: HSU YU-RUNG
30 granted patents·3 pending applications·1,251 citations·filing 2007–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD12TAIWAN SEMICONDUCTOR MFG11YU CHEN-HUA4CHANG CHENG-HUNG3HSU YU-RUNG3
Top patents by PatentIndex Score
33 records- 0199US8048723B2Germanium FinFETs having dielectric punch-through stoppersTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Nov 1, 2011·265 cites·17 claims
- 0299US7667271B2Fin field-effect transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 23, 2010·583 cites·18 claims
- 0397US7560785B2Semiconductor device having multiple fin heightsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jul 14, 2009·59 cites·12 claims
- 0496US9299785B2Reducing resistance in source and drain regions of FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Mar 29, 2016·12 cites·20 claims
- 0596US8957477B2Germanium FinFETs having dielectric punch-through stoppersCHANG CHENG-HUNG·Filed 2011·Granted Feb 17, 2015·23 cites·17 claims
- 0696US7939889B2Reducing resistance in source and drain regions of FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted May 10, 2011·36 cites·18 claims
- 0796US7902035B2Semiconductor device having multiple fin heightsTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Mar 8, 2011·36 cites·13 claims
- 0896US7843000B2Semiconductor device having multiple fin heightsTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Nov 30, 2010·39 cites·13 claims
- 0996US7612405B2Fabrication of FinFETs with multiple fin heightsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 3, 2009·55 cites·20 claims
- 1095US11887985B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 30, 2024·2 cites·20 claims
- 1195US8912602B2FinFETs and methods for forming the sameHSU YU-RUNG·Filed 2010·Granted Dec 16, 2014·27 cites·20 claims
- 1295US8101994B2Semiconductor device having multiple fin heightsYU CHEN-HUA·Filed 2010·Granted Jan 24, 2012·19 cites·20 claims
- 1394US8293616B2Methods of fabrication of semiconductor devices with low capacitanceCHANG CHENG-HUNG·Filed 2009·Granted Oct 23, 2012·25 cites·19 claims
- 1493US9076689B2Reducing resistance in source and drain regions of FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 7, 2015·12 cites·20 claims
- 1593US7910994B2System and method for source/drain contact processingTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 22, 2011·21 cites·20 claims
- 1690US8617948B2Reducing resistance in source and drain regions of FinFETsYU CHEN-HUA·Filed 2011·Granted Dec 31, 2013·8 cites·15 claims
- 1785US9269814B2Sacrificial layer fin isolation for fin height and leakage control of bulk finFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 23, 2016·7 cites·20 claims
- 1883US7910467B2Method for treating layers of a gate stackTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Mar 22, 2011·8 cites·23 claims
- 1981US12288791B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 2080US11114563B2Semiconductor devices with low junction capacitances and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 7, 2021·2 cites·20 claims
- 2180US8143114B2System and method for source/drain contact processingYU CHEN-HUA·Filed 2011·Granted Mar 27, 2012·4 cites·20 claims
- 2279US2025227994A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2377US8765556B2Method of fabricating strained structure in semiconductor deviceHSU YU-RUNG·Filed 2009·Granted Jul 1, 2014·5 cites·20 claims
- 2475US2024387694A1Isolated Fin Structures in Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2571US11211476B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 28, 2021·0 cites·20 claims
- 2669US12317566B2Isolated fin structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 27, 2025·0 cites·20 claims
- 2766US8734662B2Techniques providing photoresist removalHSU YU-RUNG·Filed 2011·Granted May 27, 2014·2 cites·14 claims
- 2864US10840356B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·0 cites·20 claims
- 2964US9935197B2Semiconductor devices with low junction capacitancesCHANG CHENG HUNG·Filed 2012·Granted Apr 3, 2018·1 cites·20 claims
- 3060US10269936B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
- 3160US2025287652A1Isolation structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3257US12002663B2Processing apparatus and method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 4, 2024·0 cites·20 claims
- 3352US11038056B2System and method for source/drain contact processingYU CHEN HUA·Filed 2012·Granted Jun 15, 2021·0 cites·20 claims
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