Inventor · disambiguated record
Wataru Otsuka
Also filed as: OTSUKA WATARU
28 granted patents·198 citations·filing 2005–2019
96Inventor score
Files withSONY CORP11MICRON TECHNOLOGY INC8OTSUKA WATARU3SONY SEMICONDUCTOR SOLUTIONS CORP2SUMITOMO BAKELITE CO2
Top patents by PatentIndex Score
28 records- 0198US9070441B2Non-volatile memory system with reset verification mechanism and method of operation thereofSONY CORP·Filed 2012·Granted Jun 30, 2015·40 cites·20 claims
- 0290US8144499B2Variable resistance memory deviceKITAGAWA MAKOTO·Filed 2009·Granted Mar 27, 2012·25 cites·14 claims
- 0390US7599210B2Nonvolatile memory cell, storage device and nonvolatile logic circuitSONY CORP·Filed 2006·Granted Oct 6, 2009·26 cites·20 claims
- 0489US9349450B2Memory devices and memory operational methods including single erase operation of conductive bridge memory cellsMICRON TECHNOLOGY INC·Filed 2013·Granted May 24, 2016·8 cites·20 claims
- 0586US8279654B2Resistance change memory device and operation method of the sameOTSUKA WATARU·Filed 2010·Granted Oct 2, 2012·12 cites·9 claims
- 0685US9911489B2Memory cells, memory systems, and memory programming methodsMICRON TECHNOLOGY INC·Filed 2016·Granted Mar 6, 2018·5 cites·34 claims
- 0785US7560724B2Storage device with reversible resistance change elementsSONY CORP·Filed 2005·Granted Jul 14, 2009·18 cites·11 claims
- 0885US7242606B2Storage apparatus and semiconductor apparatusSONY CORP·Filed 2005·Granted Jul 10, 2007·19 cites·12 claims
- 0980US10395731B2Memory cells, memory systems, and memory programming methodsMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 27, 2019·3 cites·37 claims
- 1079US9293196B2Memory cells, memory systems, and memory programming methodsMICRON TECHNOLOGY INC·Filed 2013·Granted Mar 22, 2016·5 cites·38 claims
- 1176US9019755B2Memory unit and method of operating the sameOTSUKA WATARU·Filed 2011·Granted Apr 28, 2015·6 cites·20 claims
- 1275US8559210B2Memory deviceMIYATA KOJI·Filed 2011·Granted Oct 15, 2013·4 cites·16 claims
- 1373US9007837B2Non-volatile memory system with reset control mechanism and method of operation thereofSONY CORP·Filed 2013·Granted Apr 14, 2015·4 cites·10 claims
- 1473US8575583B2Memory storage device having a variable resistance memory storage elementOTSUKA WATARU·Filed 2011·Granted Nov 5, 2013·2 cites·9 claims
- 1573US7916556B2Semiconductor memory device, sense amplifier circuit and memory cell reading method using a threshold correction circuitrySONY CORP·Filed 2007·Granted Mar 29, 2011·8 cites·15 claims
- 1672US10438661B2Memory devices and methods of writing memory cells at different moments in timeMICRON TECHNOLOGY INC·Filed 2016·Granted Oct 8, 2019·2 cites·14 claims
- 1769US10783961B2Memory cells, memory systems, and memory programming methodsMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 22, 2020·1 cites·14 claims
- 1869US9646690B2Non-volatile memory system with reset verification mechanism and method of operation thereofSONY CORP·Filed 2015·Granted May 9, 2017·2 cites·8 claims
- 1968US10622067B2Memory systems and memory writing methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Apr 14, 2020·1 cites·15 claims
- 2066US9530469B2Integrated circuit system with non-volatile memory stress suppression and method of manufacture thereofSONY CORP·Filed 2013·Granted Dec 27, 2016·3 cites·8 claims
- 2164US11295812B2Memory devices and memory operational methodsMICRON TECHNOLOGY INC·Filed 2019·Granted Apr 5, 2022·0 cites·26 claims
- 2264US10492794B2Clip cartridgeSUMITOMO BAKELITE CO·Filed 2017·Granted Dec 3, 2019·1 cites·20 claims
- 2362US10213251B2High-frequency treatment toolSUMITOMO BAKELITE CO·Filed 2014·Granted Feb 26, 2019·2 cites·8 claims
- 2455US9153317B2Non-volatile memory system with power reduction mechanism and method of operation thereofSONY CORP·Filed 2012·Granted Oct 6, 2015·1 cites·16 claims
- 2547US9905300B2Memory device with variable trim parametersSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2017·Granted Feb 27, 2018·0 cites·20 claims
- 2647US9594516B2Memory device with variable trim parametersSONY CORP·Filed 2014·Granted Mar 14, 2017·0 cites·8 claims
- 2741US9093147B2Method and apparatus for common source line charge transferSONY CORP·Filed 2013·Granted Jul 28, 2015·0 cites·14 claims
- 2839US10249366B2Integrated circuit system with non-volatile memory stress suppression and method of manufacture thereofSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2016·Granted Apr 2, 2019·0 cites·20 claims
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