Inventor · disambiguated record
Sangbom Kang
Also filed as: KANG SANGBOM
7 granted patents·2 pending applications·78 citations·filing 2008–2019
84Inventor score
Top patents by PatentIndex Score
9 records- 0192US8906761B2Method of manufacturing for semiconductor device using expandable materialSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 9, 2014·36 cites·19 claims
- 0291US8012828B2Recess gate transistorSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 6, 2011·23 cites·9 claims
- 0388US11004976B2Semiconductor device including MOS transistor having silicided source/drain region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 11, 2021·3 cites·19 claims
- 0488US8835995B2Semiconductor devices including silicide regions and methods of fabricating the sameKANG SUNGKWAN·Filed 2011·Granted Sep 16, 2014·12 cites·17 claims
- 0575US10170622B2Semiconductor device including MOS transistor having silicided source/drain region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 1, 2019·1 cites·15 claims
- 0668US8772115B2Semiconductor device having selectively nitrided gate insulating layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 8, 2014·3 cites·16 claims
- 0758US2015031183A1Semiconductor devices including silicide regions and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 0856US10263109B2Semiconductor devices including silicide regions and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 16, 2019·0 cites·19 claims
- 0936US2012269498A1Unit for supporting a substrate and apparatus for treating a substrate with the unitKANG GONSU·Filed 2012·Application pending·0 cites
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