Inventor · disambiguated record
Sungkwan Kang
Also filed as: KANG SUNGKWAN
7 granted patents·1 pending application·39 citations·filing 2006–2019
82Inventor score
Top patents by PatentIndex Score
8 records- 0188US11004976B2Semiconductor device including MOS transistor having silicided source/drain region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 11, 2021·3 cites·19 claims
- 0288US8835995B2Semiconductor devices including silicide regions and methods of fabricating the sameKANG SUNGKWAN·Filed 2011·Granted Sep 16, 2014·12 cites·17 claims
- 0387US7432173B2Methods of fabricating silicon-on-insulator substrates having a laser-formed single crystalline filmSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 7, 2008·14 cites·33 claims
- 0482US7396744B2Method of forming a semiconductor thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 8, 2008·9 cites·24 claims
- 0575US10170622B2Semiconductor device including MOS transistor having silicided source/drain region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 1, 2019·1 cites·15 claims
- 0658US2015031183A1Semiconductor devices including silicide regions and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 0756US10263109B2Semiconductor devices including silicide regions and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 16, 2019·0 cites·19 claims
- 0840US7674660B2Multilevel semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 9, 2010·0 cites·21 claims
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