Inventor · disambiguated record
Masao Uchida
Also filed as: UCHIDA MASAO
75 granted patents·8 pending applications·1,009 citations·filing 1976–2021
99Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD22PANASONIC IP MAN CO LTD20PANASONIC CORP16UCHIDA MASAO8ADACHI KAZUHIRO2
Top patents by PatentIndex Score
83 records- 0196US7507999B2Semiconductor device and method for manufacturing samePANASONIC CORP·Filed 2003·Granted Mar 24, 2009·133 cites·12 claims
- 0296US6228720B1Method for making insulated-gate semiconductor elementMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted May 8, 2001·120 cites·11 claims
- 0395US6995397B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Feb 7, 2006·114 cites·26 claims
- 0494US6306211B1Method for growing semiconductor film and method for fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Oct 23, 2001·84 cites·14 claims
- 0591US8283973B2Semiconductor element, semiconductor device, and electric power converterHASHIMOTO KOICHI·Filed 2010·Granted Oct 9, 2012·17 cites·22 claims
- 0690US7671409B2Wide gap semiconductor power device with temperature independent resistivity due to channel region resistivity having negative temperature dependencePANASONIC CORP·Filed 2005·Granted Mar 2, 2010·18 cites·8 claims
- 0789US10672878B2Silicon carbide semiconductor devicePANASONIC IP MAN CO LTD·Filed 2019·Granted Jun 2, 2020·7 cites·7 claims
- 0885US8686439B2Silicon carbide semiconductor elementTAKAHASHI KUNIMASA·Filed 2012·Granted Apr 1, 2014·8 cites·8 claims
- 0985US7791308B2Semiconductor element and electrical apparatusPANASONIC CORP·Filed 2006·Granted Sep 7, 2010·14 cites·11 claims
- 1084US8563988B2Semiconductor element and manufacturing method thereforUCHIDA MASAO·Filed 2011·Granted Oct 22, 2013·6 cites·19 claims
- 1184US6654604B2Equipment for communication systemMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Nov 25, 2003·28 cites·17 claims
- 1284US5777427AElectron emission cathode having a semiconductor film; a device including the cathode; and a method for making the cathodeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Jul 7, 1998·36 cites·39 claims
- 1382US9773924B2Semiconductor device having barrier region and edge termination region enclosing barrier regionPANASONIC IP MAN CO LTD·Filed 2016·Granted Sep 26, 2017·5 cites·20 claims
- 1482US9252211B2Semiconductor device and manufacturing method thereofPANASONIC IP MAN CO LTD·Filed 2015·Granted Feb 2, 2016·4 cites·9 claims
- 1582US8933463B2Semiconductor element, semiconductor device, and power converterADACHI KAZUHIRO·Filed 2013·Granted Jan 13, 2015·6 cites·40 claims
- 1682US7473929B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2004·Granted Jan 6, 2009·23 cites·13 claims
- 1781US11312966B2Nucleic acid for treating mite allergyASTELLAS PHARMA INC·Filed 2021·Granted Apr 26, 2022·1 cites·12 claims
- 1881US9865591B2Silicon carbide semiconductor devicePANASONIC IP MAN CO LTD·Filed 2016·Granted Jan 9, 2018·3 cites·8 claims
- 1981US9029874B2Semiconductor device having a first silicon carbide semiconductor layer and a second silicon carbide semiconductor layerPANASONIC CORP·Filed 2013·Granted May 12, 2015·6 cites·19 claims
- 2081US7462540B2Silicon carbide semiconductor device and process for producing the samePANASONIC CORP·Filed 2005·Granted Dec 9, 2008·7 cites·9 claims
- 2181US6995396B2Semiconductor substrate, semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Feb 7, 2006·25 cites·11 claims
- 2281US5984752AElectron emission cathode; an electron emission device, a flat display, a thermoelectric cooling device incorporating the same; and a method for producing the electron emission cathodeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Nov 16, 1999·30 cites·3 claims
- 2379US6270573B1Silicon carbide substrate, and method for producing the substrate, and semiconductor device utilizing the substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Aug 7, 2001·42 cites·40 claims
- 2479US4497720AMethod for treating metallic or ceramic surfaces at high temperaturesTEIJIN LTD·Filed 1983·Granted Feb 5, 1985·30 cites·13 claims
- 2578US8933466B2Semiconductor elementPANASONIC CORP·Filed 2012·Granted Jan 13, 2015·5 cites·27 claims
- 2678US8410489B2Semiconductor element, semiconductor device, and power converterADACHI KAZUHIRO·Filed 2010·Granted Apr 2, 2013·5 cites·38 claims
- 2777US10658466B2Semiconductor element and method of manufacturing the samePANASONIC IP MAN CO LTD·Filed 2019·Granted May 19, 2020·2 cites·21 claims
- 2877US7230273B2Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 12, 2007·24 cites·9 claims
- 2976US8772788B2Semiconductor element and method of manufacturing thereofIKEGAMI RYO·Filed 2012·Granted Jul 8, 2014·6 cites·23 claims
- 3076US6577386B2Method and apparatus for activating semiconductor impuritiesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jun 10, 2003·16 cites·2 claims
- 3175US9006748B2Semiconductor device and method for manufacturing samePANASONIC CORP·Filed 2013·Granted Apr 14, 2015·3 cites·12 claims
- 3275US6580125B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jun 17, 2003·18 cites·8 claims
- 3373US9923090B2Silicon carbide semiconductor element and method for manufacturing the samePANASONIC IP MAN CO LTD·Filed 2017·Granted Mar 20, 2018·2 cites·15 claims
- 3473US9691759B2Semiconductor device including semiconductor substrate, silicon carbide semiconductor layer, unit cells, source, and gatePANASONIC IP MAN CO LTD·Filed 2016·Granted Jun 27, 2017·2 cites·13 claims
- 3573US9577044B2Semiconductor device with first and second electrodes forming schottky junction with silicon carbide semiconductor layer and method of manufacturing the samePANASONIC IP MAN CO LTD·Filed 2015·Granted Feb 21, 2017·2 cites·17 claims
- 3673US6940110B2SiC-MISFET and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Sep 6, 2005·18 cites·10 claims
- 3772US9543858B2Semiconductor device and inverter using samePANASONIC IP MAN CO LTD·Filed 2014·Granted Jan 10, 2017·3 cites·19 claims
- 3872US7381993B2High-breakdown-voltage insulated gate semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2007·Granted Jun 3, 2008·4 cites·14 claims
- 3971US8809871B2Semiconductor element and semiconductor deviceUCHIDA MASAO·Filed 2011·Granted Aug 19, 2014·2 cites·8 claims
- 4070US6600203B2Semiconductor device with silicon carbide suppression layer for preventing extension of micropipeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jul 29, 2003·12 cites·3 claims
- 4169US8748901B1Silicon carbide semiconductor elementPANASONIC CORP·Filed 2014·Granted Jun 10, 2014·2 cites·9 claims
- 4269US7217954B2Silicon carbide semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 15, 2007·11 cites·14 claims
- 4369US6940127B2Equipment for communication system and semiconductor integrated circuit deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Sep 6, 2005·12 cites·7 claims
- 4468US9214546B2Silicon carbide switching device with novel overvoltage detection element for overvoltage controlPANASONIC IP MAN CO LTD·Filed 2014·Granted Dec 15, 2015·2 cites·9 claims
- 4568US7964911B2Semiconductor element and electrical apparatusPANASONIC CORP·Filed 2006·Granted Jun 21, 2011·4 cites·13 claims
- 4668US7436031B2Device for implementing an inverter having a reduced sizeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Oct 14, 2008·4 cites·14 claims
- 4767US9209262B2Silicon carbide semiconductor device and method for manufacturing samePANASONIC CORP·Filed 2013·Granted Dec 8, 2015·2 cites·7 claims
- 4867US6504176B2Field effect transistor and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jan 7, 2003·13 cites·8 claims
- 4964US7709403B2Silicon carbide-oxide layered structure, production method thereof, and semiconductor devicePANASONIC CORP·Filed 2004·Granted May 4, 2010·11 cites·3 claims
- 5063US8742427B2Semiconductor elementKITABATAKE MAKOTO·Filed 2011·Granted Jun 3, 2014·2 cites·5 claims
Showing the top 50 of 83 patent records by PatentIndex Score.
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