Inventor · disambiguated record
Jyun-Siang Huang
Also filed as: HUANG JYUN-SIANG
23 granted patents·1 pending application·88 citations·filing 2008–2016
94Inventor score
Top patents by PatentIndex Score
24 records- 0189US8531886B2Hot carrier programming in NAND flashHUANG JYUN-SIANG·Filed 2010·Granted Sep 10, 2013·12 cites·12 claims
- 0288US7974127B2Operation methods for memory cell and array for reducing punch through leakageMACRONIX INT CO LTD·Filed 2008·Granted Jul 5, 2011·17 cites·28 claims
- 0386US8842479B2Low voltage programming in NAND flash with two stage source side biasHUANG JYUN-SIANG·Filed 2011·Granted Sep 23, 2014·12 cites·21 claims
- 0484US8947939B2Low voltage programming in NAND flashTSAI PING-HUNG·Filed 2010·Granted Feb 3, 2015·12 cites·31 claims
- 0581US8755232B2Hot carrier programming in NAND flashMACRONIX INT CO LTD·Filed 2013·Granted Jun 17, 2014·6 cites·14 claims
- 0672US8139416B2Operation methods for memory cell and array for reducing punch through leakageCHONG LIT-HO·Filed 2011·Granted Mar 20, 2012·4 cites·15 claims
- 0771US9773554B2Composite impurity scheme for memory technologiesMACRONIX INT CO LTD·Filed 2014·Granted Sep 26, 2017·2 cites·19 claims
- 0871US9455007B2Word line driver circuitry and compact memory using sameMACRONIX INT CO LTD·Filed 2014·Granted Sep 27, 2016·4 cites·20 claims
- 0970US7864594B2Memory apparatus and method thereof for operating memoryMACRONIX INT CO LTD·Filed 2008·Granted Jan 4, 2011·6 cites·22 claims
- 1069US8520439B2Memory array and method for programming memory arrayTSAI WEN-JER·Filed 2012·Granted Aug 27, 2013·5 cites·20 claims
- 1168US8665652B2Method for erasing memory arrayHUANG JYUN-SIANG·Filed 2011·Granted Mar 4, 2014·4 cites·19 claims
- 1262US7995384B2Electrically isolated gated diode nonvolatile memoryMACRONIX INT CO LTD·Filed 2008·Granted Aug 9, 2011·2 cites·19 claims
- 1356US8369148B2Operation methods for memory cell and array thereof immune to punchthrough leakageMACRONIX INT CO LTD·Filed 2008·Granted Feb 5, 2013·2 cites·16 claims
- 1455US9349878B2Multi level programmable memory structureMACRONIX INT CO LTD·Filed 2014·Granted May 24, 2016·0 cites·8 claims
- 1554US9786794B2Method of fabricating memory structureMACRONIX INT CO LTD·Filed 2016·Granted Oct 10, 2017·0 cites·18 claims
- 1646US8143665B2Memory array and method for manufacturing and operating the sameHUANG JYUN-SIANG·Filed 2009·Granted Mar 27, 2012·0 cites·8 claims
- 1744US9312139B2Semiconductor element having conductive damascene structures extending perpendicular to doping strips, and manufacturing method of the sameMACRONIX INT CO LTD·Filed 2013·Granted Apr 12, 2016·0 cites·5 claims
- 1844US8796754B2Multi level programmable memory structure with multiple charge storage structures and fabricating method thereofCHENG CHENG-HSIEN·Filed 2011·Granted Aug 5, 2014·0 cites·15 claims
- 1944US2011079840A1Memory cell and manufacturing method thereof and memory structureMACRONIX INT CO LTD·Filed 2009·Application pending·0 cites
- 2040US8760909B2Memory and manufacturing method thereofHUANG JYUN-SIANG·Filed 2011·Granted Jun 24, 2014·0 cites·20 claims
- 2140US8569822B2Memory structureHUANG JYUN-SIANG·Filed 2011·Granted Oct 29, 2013·0 cites·10 claims
- 2240US8218364B2Operation methods for memory cell and array for reducing punch through leakageCHONG LIT-HO·Filed 2011·Granted Jul 10, 2012·0 cites·34 claims
- 2336US8664709B2Non-volatile memory and fabricating method thereofYAN SHIH-GUEI·Filed 2010·Granted Mar 4, 2014·0 cites·21 claims
- 2434US8861281B2Method of programming memory and memory apparatus utilizing the methodTSAI PING-HUNG·Filed 2011·Granted Oct 14, 2014·0 cites·15 claims
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