Inventor · disambiguated record
In-Woo Jun
Also filed as: JUN IN-WOO
9 granted patents·432 citations·filing 2010–2021
86Inventor score
Top patents by PatentIndex Score
9 records- 0195US10811078B2Semiconductor memory devices, memory systems and methods of operating semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 20, 2020·5 cites·20 claims
- 0295US8644101B2Local sense amplifier circuit and semiconductor memory device including the sameJUN IN-WOO·Filed 2012·Granted Feb 4, 2014·413 cites·16 claims
- 0390US10521293B2Memory device for performing parallel read-modify-write operationSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 31, 2019·7 cites·20 claims
- 0482US11557332B2Semiconductor memory devices, memory systems and methods of operating semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 17, 2023·1 cites·18 claims
- 0573US10586584B2Semiconductor semiconductor memory devices, memory systems and methods of operating memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 10, 2020·2 cites·20 claims
- 0672US10636475B2Memory device for receiving operation codes through dq pins, a memory module including the same, and a setting method of the memory moduleSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 28, 2020·3 cites·20 claims
- 0770US10503589B2Semiconductor memory devices, memory systems and methods of operating semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 10, 2019·1 cites·20 claims
- 0866US11031065B2Semiconductor memory devices, memory systems and methods of operating semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 8, 2021·0 cites·16 claims
- 0934US8437206B2Latency circuit and semiconductor device comprising sameJUN IN-WOO·Filed 2010·Granted May 7, 2013·0 cites·11 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →