Inventor · disambiguated record
Shanghui Larry Tu
Also filed as: TU SHANGHUI · TU SHANGHUI L · TU SHANGHUI LARRY
32 granted patents·1 pending application·225 citations·filing 2003–2023
96Inventor score
Files withSILANNA ASIA PTE LTD17SEMICONDUCTOR COMPONENTS IND11ALPHA & OMEGA SEMICONDUCTOR INT LP1GRIVNA GORDON M1QUDDUS MOHAMMED TANVIR1
Top patents by PatentIndex Score
33 records- 0197US7411266B2Semiconductor device having trench charge compensation regions and methodSEMICONDUCTOR COMPONENTS IND·Filed 2006·Granted Aug 12, 2008·61 cites·20 claims
- 0295US9923059B1Connection arrangements for integrated lateral diffusion field effect transistorsSILANNA ASIA PTE LTD·Filed 2017·Granted Mar 20, 2018·11 cites·14 claims
- 0394US7679146B2Semiconductor device having sub-surface trench charge compensation regionsSEMICONDUCTOR COMPONENTS IND·Filed 2006·Granted Mar 16, 2010·28 cites·19 claims
- 0493US11869934B2Ultra-high voltage resistor with voltage senseSILANNA ASIA PTE LTD·Filed 2021·Granted Jan 9, 2024·2 cites·12 claims
- 0592US10083897B2Connection arrangements for integrated lateral diffusion field effect transistors having a backside contactSILANNA ASIA PTE LTD·Filed 2017·Granted Sep 25, 2018·7 cites·9 claims
- 0687US7126166B2High voltage lateral FET structure with improved on resistance performanceSEMICONDUCTOR COMPONENTS IND·Filed 2004·Granted Oct 24, 2006·50 cites·19 claims
- 0786US7381603B2Semiconductor structure with improved on resistance and breakdown voltage performanceSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Jun 3, 2008·11 cites·23 claims
- 0882US7799640B2Method of forming a semiconductor device having trench charge compensation regionsSEMICONDUCTOR COMPONENTS IND·Filed 2006·Granted Sep 21, 2010·9 cites·21 claims
- 0982US7615469B2Edge seal for a semiconductor device and method thereforSEMICONDUCTOR COMPONENTS IND·Filed 2007·Granted Nov 10, 2009·8 cites·11 claims
- 1082US7276766B2Semiconductor structure with improved on resistance and breakdown voltage performanceSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Oct 2, 2007·9 cites·15 claims
- 1177US12159815B2Connection arrangements for integrated lateral diffusion field effect transistors having a backside contactSILANNA ASIA PTE LTD·Filed 2022·Granted Dec 3, 2024·0 cites·11 claims
- 1276US8168466B2Schottky diode and method thereforQUDDUS MOHAMMED TANVIR·Filed 2007·Granted May 1, 2012·7 cites·17 claims
- 1374US12230707B2Source contact formation of MOSFET with gate shield buffer for pitch reductionSILANNA ASIA PTE LTD·Filed 2023·Granted Feb 18, 2025·0 cites·9 claims
- 1474US12211894B2Ultra-high voltage resistor with voltage senseSILANNA ASIA PTE LTD·Filed 2023·Granted Jan 28, 2025·0 cites·10 claims
- 1573US7682955B1Method for forming deep well of power deviceVANGUARD INT SEMICONDUCT CORP·Filed 2008·Granted Mar 23, 2010·4 cites·15 claims
- 1670US11335627B2Connection arrangements for integrated lateral diffusion field effect transistors having a backside contactSILANNA ASIA PTE LTD·Filed 2020·Granted May 17, 2022·0 cites·18 claims
- 1767US11664449B2LDMOS architecture and method for formingSILANNA ASIA PTE LTD·Filed 2022·Granted May 30, 2023·0 cites·18 claims
- 1867US7943466B2Method of forming a semiconductor device having sub-surface trench charge compensation regionsSEMICONDUCTOR COMPONENTS IND·Filed 2010·Granted May 17, 2011·2 cites·20 claims
- 1966US6982461B2Lateral FET structure with improved blocking voltage and on resistance performance and methodSEMICONDUCTOR COMPONENTS IND·Filed 2003·Granted Jan 3, 2006·13 cites·9 claims
- 2064US11735656B2Source contact formation of MOSFET with gate shield buffer for pitch reductionSILANNA ASIA PTE LTD·Filed 2020·Granted Aug 22, 2023·0 cites·15 claims
- 2161US11282955B2LDMOS architecture and method for formingSILANNA ASIA PTE LTD·Filed 2020·Granted Mar 22, 2022·0 cites·19 claims
- 2261US10446687B2Integrated circuit connection arrangement for minimizing crosstalkSILANNA ASIA PTE LTD·Filed 2019·Granted Oct 15, 2019·0 cites·9 claims
- 2361US8049309B2Edge seal for a semiconductor deviceSEMICONDUCTOR CONPONENTS IND LLC·Filed 2009·Granted Nov 1, 2011·2 cites·9 claims
- 2460US10546804B2Connection arrangements for integrated lateral diffusion field effect transistors having a backside contactSILANNA ASIA PTE LTD·Filed 2018·Granted Jan 28, 2020·0 cites·18 claims
- 2560US2025113620A1Distributed Gate Drive for DrMOSALPHA & OMEGA SEMICONDUCTOR INT LP·Filed 2023·Application pending·0 cites
- 2659US10249759B2Connection arrangements for integrated lateral diffusion field effect transistorsSILANNA ASIA PTE LTD·Filed 2018·Granted Apr 2, 2019·0 cites·19 claims
- 2758US10424666B2Leadframe and integrated circuit connection arrangementSILANNA ASIA PTE LTD·Filed 2017·Granted Sep 24, 2019·0 cites·23 claims
- 2858US10192989B2Integrated circuit connection arrangement for minimizing crosstalkSILANNA ASIA PTE LTD·Filed 2017·Granted Jan 29, 2019·0 cites·11 claims
- 2957US10790389B2Source contact formation of MOSFET with gate shield buffer for pitch reductionSILANNA ASIA PTE LTD·Filed 2018·Granted Sep 29, 2020·0 cites·17 claims
- 3056US8304326B2Edge seal for a semiconductor device and method thereforGRIVNA GORDON M·Filed 2009·Granted Nov 6, 2012·0 cites·6 claims
- 3148US7632760B2Semiconductor device having field stabilization film and methodSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Dec 15, 2009·1 cites·15 claims
- 3241US10424661B1Avalanche robust LDMOSSILANNA ASIA PTE LTD·Filed 2018·Granted Sep 24, 2019·0 cites·21 claims
- 3335US7875950B2Schottky diode structure with multi-portioned guard ring and method of manufactureSEMICONDUCTOR COMPONENTS IND·Filed 2007·Granted Jan 25, 2011·0 cites·12 claims
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