Inventor · disambiguated record
Gert Leusink
Also filed as: LEUSINK GERT · LEUSINK GERT J
20 granted patents·3 pending applications·450 citations·filing 1997–2015
95Inventor score
Top patents by PatentIndex Score
23 records- 0197US5926737AUse of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processingTOKYO ELECTRON LTD·Filed 1997·Granted Jul 20, 1999·213 cites·23 claims
- 0288US6989321B2Low-pressure deposition of metal layers from metal-carbonyl precursorsIBM·Filed 2003·Granted Jan 24, 2006·41 cites·32 claims
- 0384US6924223B2Method of forming a metal layer using an intermittent precursor gas flow processIBM·Filed 2003·Granted Aug 2, 2005·32 cites·53 claims
- 0483US6853953B2Method for characterizing the performance of an electrostatic chuckTOKYO ELECTRON LTD·Filed 2001·Granted Feb 8, 2005·37 cites·41 claims
- 0582US7674710B2Method of integrating metal-containing films into semiconductor devicesTOKYO ELECTRON LTD·Filed 2006·Granted Mar 9, 2010·10 cites·29 claims
- 0680US7393761B2Method for fabricating a semiconductor deviceTOKYO ELECTRON LTD·Filed 2005·Granted Jul 1, 2008·7 cites·25 claims
- 0778US7067422B2Method of forming a tantalum-containing gate electrode structureIBM·Filed 2004·Granted Jun 27, 2006·23 cites·31 claims
- 0878US6992011B2Method and apparatus for removing material from chamber and wafer surfaces by high temperature hydrogen-containing plasmaTOKYO ELECTRON LTD·Filed 2003·Granted Jan 31, 2006·25 cites·23 claims
- 0974US9607888B2Integration of ALD barrier layer and CVD Ru liner for void-free Cu fillingTOKYO ELECTRON LTD·Filed 2015·Granted Mar 28, 2017·2 cites·20 claims
- 1073US7300891B2Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiationTOKYO ELECTRON LTD·Filed 2005·Granted Nov 27, 2007·7 cites·26 claims
- 1170US7078341B2Method of depositing metal layers from metal-carbonyl precursorsIBM·Filed 2003·Granted Jul 18, 2006·12 cites·40 claims
- 1263US6635569B1Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatusTOKYO ELECTRON LTD·Filed 1998·Granted Oct 21, 2003·24 cites·29 claims
- 1362US7265066B2Method and system for increasing tensile stress in a thin film using collimated electromagnetic radiationTOKYO ELECTRON LTD·Filed 2005·Granted Sep 4, 2007·3 cites·31 claims
- 1461US8168548B2UV-assisted dielectric formation for devices with strained germanium-containing layersLEUSINK GERT·Filed 2006·Granted May 1, 2012·2 cites·18 claims
- 1555US8722548B2Structures and techniques for atomic layer depositionAOYAMA SHINTARO·Filed 2010·Granted May 13, 2014·1 cites·15 claims
- 1653US7189431B2Method for forming a passivated metal layerIBM·Filed 2004·Granted Mar 13, 2007·5 cites·16 claims
- 1752US8460945B2Method for monitoring status of system componentsO'MEARA DAVID L·Filed 2003·Granted Jun 11, 2013·2 cites·4 claims
- 1851US7419702B2Method for processing a substrateTOKYO ELECTRON LTD·Filed 2004·Granted Sep 2, 2008·1 cites·18 claims
- 1946US7479454B2Method and processing system for monitoring status of system componentsTOKYO ELECTRON LTD·Filed 2003·Granted Jan 20, 2009·3 cites·20 claims
- 2041US8580034B2Low-temperature dielectric formation for devices with strained germanium-containing channelsLEUSINK GERT·Filed 2006·Granted Nov 12, 2013·0 cites·14 claims
- 2140US2006068098A1Deposition of ruthenium metal layers in a thermal chemical vapor deposition processTOKYO ELECTRON LTD·Filed 2004·Application pending·0 cites
- 2239US2005069641A1Method for depositing metal layers using sequential flow depositionTOKYO ELECTRON LTD·Filed 2003·Application pending·0 cites
- 2338US2006068588A1Low-pressure deposition of ruthenium and rhenium metal layers from metal carbonyl precursorsIBM·Filed 2004·Application pending·0 cites
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