Inventor · disambiguated record
Byung Jin Ahn
Also filed as: AHN BYUNG J · AHN BYUNG JIN · AHN BYUNG N
23 granted patents·2 pending applications·310 citations·filing 1995–2021
96Inventor score
Files withHYUNDAI ELECTRONICS IND13LG ELECTRONICS INC6HYNIX SEMICONDUCTOR INC2AHN BYUNG JIN1HYUNDAI ELECTRONICS CO LTD1
Top patents by PatentIndex Score
25 records- 0198US11400864B2Front storage apparatus for vehicleHYUNDAI MOTOR CO LTD·Filed 2021·Granted Aug 2, 2022·10 cites·8 claims
- 0289US7787914B2Mobile communication terminal having opening mechanismLG ELECTRONICS INC·Filed 2006·Granted Aug 31, 2010·24 cites·27 claims
- 0384US8358278B2Input device, mobile terminal having the same, and user interface thereofLG ELECTRONICS INC·Filed 2008·Granted Jan 22, 2013·13 cites·26 claims
- 0482US5614747AMethod for manufacturing a flash EEPROM cellHYUNDAI ELECTRONICS IND·Filed 1995·Granted Mar 25, 1997·57 cites·13 claims
- 0570US7428430B2Open and close apparatus of slide type portable terminalLG ELECTRONICS INC·Filed 2004·Granted Sep 23, 2008·17 cites·30 claims
- 0670US5652161AMethod of making split gate flash EEPROM cellHYUNDAY ELECTRONICS IND CO LTD·Filed 1996·Granted Jul 29, 1997·31 cites·5 claims
- 0768US7299078B2Mobile terminalLG ELECTRONICS INC·Filed 2004·Granted Nov 20, 2007·9 cites·52 claims
- 0864US6407947B2Method of erasing a flash memory deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted Jun 18, 2002·14 cites·22 claims
- 0964US5877525AFlash EEPROM cell and method of making the sameHYUNDAI ELECTRONICS IND·Filed 1996·Granted Mar 2, 1999·20 cites·1 claims
- 1063US5612237AMethod of making flash EEPROM cellHYUNDAI ELECTRONICS IND·Filed 1995·Granted Mar 18, 1997·20 cites·5 claims
- 1159US5716865AMethod of making split gate flash EEPROM cell by separating the tunneling region from the channelHYUNDAI ELECTRONICS IND·Filed 1996·Granted Feb 10, 1998·17 cites·6 claims
- 1256US6381192B1Address buffer in a flash memoryHYUNDAI ELECTRONICS IND·Filed 2000·Granted Apr 30, 2002·9 cites·22 claims
- 1354US6583465B1Code addressable memory cell in a flash memory deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jun 24, 2003·5 cites·2 claims
- 1451US6960805B2Flash memory cell and method of manufacturing the same, and programming/erasing/reading method in the flash memory cellHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Nov 1, 2005·4 cites·8 claims
- 1551US6703275B2Flash memory cell and method of manufacturing the same, and programming/erasing/reading method in the flash memory cellHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Mar 9, 2004·4 cites·32 claims
- 1651US6424568B2Code addressable memory cell in flash memory deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jul 23, 2002·6 cites·3 claims
- 1751US5563080AMethod of manufacturing a high voltage transistor in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1995·Granted Oct 8, 1996·11 cites·1 claims
- 1847US6465302B1Method of manufacturing a flash memory deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Oct 15, 2002·3 cites·2 claims
- 1947US5859453AFlash EEPROM cell and method of making the sameHYUNDAI ELECTRONICS IND·Filed 1997·Granted Jan 12, 1999·9 cites·2 claims
- 2045US5852312AFlash eeprom cellHYUNDAI ELECTRONICS IND·Filed 1997·Granted Dec 22, 1998·8 cites·5 claims
- 2143US8091622B2System and method for cooling engine room using blowing deviceAHN BYUNG JIN·Filed 2006·Granted Jan 10, 2012·1 cites·11 claims
- 2242US5652458AStructure of a high voltage transistor in a semiconductor device and method of manufacturing the sameHYUNDAI ELECTRONICS CO LTD·Filed 1996·Granted Jul 29, 1997·6 cites·2 claims
- 2340US5867426AMethod of programming a flash memory cellHYUNDAI ELECTRONICS IND·Filed 1997·Granted Feb 2, 1999·12 cites·6 claims
- 2437US2007046579A1Plasma display apparatusLG ELECTRONICS INC·Filed 2006·Application pending·0 cites
- 2537US2007046578A1Plasma display apparatus and driving method thereofLG ELECTRONICS INC·Filed 2006·Application pending·0 cites
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