Inventor · disambiguated record
Narbeh Derhacobian
Also filed as: DERHACOBIAN NARBEH
57 granted patents·3 pending applications·2,837 citations·filing 1997–2023
99Inventor score
Files withADVANCED MICRO DEVICES INC38DERHACOBIAN NARBEH6ADESTO TECHNOLOGIES CORP5GILBERT NAD EDWARD2KORDUS II LOUIS CHARLES2
Top patents by PatentIndex Score
60 records- 0199US6215702B1Method of maintaining constant erasing speeds for non-volatile memory cellsADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 10, 2001·279 cites·41 claims
- 0298US6541816B2Planar structure for non-volatile memory devicesADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 1, 2003·126 cites·17 claims
- 0398US6269023B1Method of programming a non-volatile memory cell using a current limiterADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 31, 2001·248 cites·21 claims
- 0498US5991202AMethod for reducing program disturb during self-boosting in a NAND flash memoryADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 23, 1999·334 cites·20 claims
- 0597US8687403B1Circuits having programmable impedance elementsDERHACOBIAN NARBEH·Filed 2011·Granted Apr 1, 2014·31 cites·19 claims
- 0697US8331128B1Reconfigurable memory arrays having programmable impedance elements and corresponding methodsDERHACOBIAN NARBEH·Filed 2009·Granted Dec 11, 2012·58 cites·26 claims
- 0796US6788574B1Electrically-alterable non-volatile memory cellVIRAGE LOGIC CORP·Filed 2002·Granted Sep 7, 2004·125 cites·22 claims
- 0896US6468865B1Method of simultaneous formation of bitline isolation and periphery oxideADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 22, 2002·97 cites·30 claims
- 0995US6590811B1Higher program VT and faster programming rates based on improved erase methodsADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 8, 2003·92 cites·25 claims
- 1095US6567303B1Charge injectionADVANCED MICRO DEVICES INC·Filed 2002·Granted May 20, 2003·104 cites·25 claims
- 1195US6555436B2Simultaneous formation of charge storage and bitline to wordline isolationADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 29, 2003·56 cites·13 claims
- 1295US6442074B1Tailored erase method using higher program VT and higher negative gate eraseADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 27, 2002·103 cites·56 claims
- 1394US8294488B1Programmable impedance element circuits and methodsDERHACOBIAN NARBEH·Filed 2010·Granted Oct 23, 2012·15 cites·9 claims
- 1494US6618290B1Method of programming a non-volatile memory cell using a baking processADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 9, 2003·85 cites·11 claims
- 1594US6519182B1Using hot carrier injection to control over-programming in a non-volatile memory cell having an oxide-nitride-oxide (ONO) structureADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 11, 2003·85 cites·28 claims
- 1694US6307784B1Negative gate eraseADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 23, 2001·82 cites·29 claims
- 1793US6465306B1Simultaneous formation of charge storage and bitline to wordline isolationADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 15, 2002·46 cites·21 claims
- 1893US6456533B1Higher program VT and faster programming rates based on improved erase methodsADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 24, 2002·62 cites·10 claims
- 1992US9007814B1Application of relaxation voltage pulses to programmble impedance elements during read operationsADESTO TECHNOLOGIES CORP·Filed 2014·Granted Apr 14, 2015·10 cites·20 claims
- 2091US8320148B1PMC-based non-volatile CAMDERHACOBIAN NARBEH·Filed 2010·Granted Nov 27, 2012·13 cites·20 claims
- 2191US6529410B1NAND array structure and method with buried layerADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 4, 2003·99 cites·14 claims
- 2291US6514830B1Method of manufacturing high voltage transistor with modified field implant maskADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 4, 2003·43 cites·10 claims
- 2390US8947913B1Circuits and methods having programmable impedance elementsDERHACOBIAN NARBEH·Filed 2011·Granted Feb 3, 2015·15 cites·36 claims
- 2490US6456536B1Method of programming a non-volatile memory cell using a substrate biasADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 24, 2002·57 cites·11 claims
- 2590US6327183B1Nonlinear stepped programming voltageADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 4, 2001·65 cites·15 claims
- 2689US6356482B1Using negative gate erase voltage to simultaneously erase two bits from a non-volatile memory cell with an oxide-nitride-oxide (ONO) gate structureADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 12, 2002·55 cites·6 claims
- 2787US8913444B1Read operations and circuits for memory devices having programmable elements, including programmable resistance elementsGILBERT NAD EDWARD·Filed 2012·Granted Dec 16, 2014·10 cites·29 claims
- 2887US8675396B1Integrated circuit devices and systems having programmable impedance elements with different response typesADESTO TECHNOLOGIES CORP·Filed 2012·Granted Mar 18, 2014·7 cites·23 claims
- 2987US7095076B1Electrically-alterable non-volatile memory cellVIRAGE LOGIC CORP·Filed 2004·Granted Aug 22, 2006·31 cites·20 claims
- 3086US6246610B1Symmetrical program and erase scheme to improve erase time degradation in NAND devicesADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 12, 2001·42 cites·13 claims
- 3185US6331953B1Intelligent ramped gate and ramped drain erasure for non-volatile memory cellsADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 18, 2001·38 cites·40 claims
- 3282US8183551B2Multi-terminal phase change devicesKORDUS II LOUIS CHARLES·Filed 2005·Granted May 22, 2012·9 cites·22 claims
- 3382US6750157B1Nonvolatile memory cell with a nitridated oxide layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 15, 2004·27 cites·12 claims
- 3481US6465303B1Method of manufacturing spacer etch mask for silicon-oxide-nitride-oxide-silicon (SONOS) type nonvolatile memoryADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 15, 2002·22 cites·20 claims
- 3578US6493261B1Single bit array edgesADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 10, 2002·25 cites·14 claims
- 3677US8822967B2Multi-terminal phase change devicesKORDUS II LOUIS CHARLES·Filed 2012·Granted Sep 2, 2014·3 cites·20 claims
- 3777US6143608ABarrier layer decreases nitrogen contamination of peripheral gate regions during tunnel oxide nitridationADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 7, 2000·39 cites·24 claims
- 3875US8659926B1PMC-based non-volatile CAMADESTO TECHNOLOGIES CORP·Filed 2012·Granted Feb 25, 2014·4 cites·20 claims
- 3974US6331952B1Positive gate erasure for non-volatile memory cellsADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 18, 2001·20 cites·14 claims
- 4073US8995173B1Memory cells, devices and method with dynamic storage elements and programmable impedance shadow elementsDERHACOBIAN NARBEH·Filed 2012·Granted Mar 31, 2015·4 cites·20 claims
- 4171US6501681B1Using a low drain bias during erase verify to ensure complete removal of residual charge in the nitride in sonos non-volatile memoriesADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 31, 2002·18 cites·31 claims
- 4268US6159795ALow voltage junction and high voltage junction optimization for flash memoryADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 12, 2000·36 cites·11 claims
- 4365US5844840AHigh voltage NMOS pass gate having supply range, area, and speed advantagesADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 1, 1998·21 cites·40 claims
- 4462US6381179B1Using a negative gate erase to increase the cycling endurance of a non-volatile memory cell with an oxide-nitride-oxide (ONO) structureADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 30, 2002·12 cites·13 claims
- 4560US5909396AHigh voltage NMOS pass gate having supply range, area, and speed advantagesADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 1, 1999·16 cites·6 claims
- 4657US9570166B1Read operations and circuits for memory devices having programmable elements, including programmable resistance elementsGILBERT NAD EDWARD·Filed 2014·Granted Feb 14, 2017·1 cites·20 claims
- 4755US2024118577A1Wireless electrochromic insulated glass unitGURU WIRELESS INC·Filed 2023·Application pending·0 cites
- 4852US10446747B1Methods of operating integrated circuit devices having volatile and nonvolatile memory portionsADESTO TECHNOLOGIES CORP·Filed 2017·Granted Oct 15, 2019·0 cites·20 claims
- 4952US6166951AMulti state sensing of NAND memory cells by applying reverse-bias voltageADVANCED MICRO DEVICES INC·Filed 1999·Granted Dec 26, 2000·14 cites·7 claims
- 5050US6228782B1Core field isolation for a NAND flash memoryADVANCED MICRO DEVICES INC·Filed 1999·Granted May 8, 2001·19 cites·26 claims
Showing the top 50 of 60 patent records by PatentIndex Score.
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