Inventor · disambiguated record
Edward Preisler
Also filed as: PREISLER EDWARD · PREISLER EDWARD J
48 granted patents·6 pending applications·58 citations·filing 2008–2025
96Inventor score
Files withNEWPORT FAB LLC45NEWPORT FAB LLC DBA TOWER SEMICONDUCTOR NEWPORT BEACH5NEWPORT FAB LLC DBA JAZZ SEMICONDUCTOR1NEWPORT FAB LLC DBA TOWER SEMICONDUCTOR NEWPORT NEWPORT BEACH1TRIEYE LTD1
Top patents by PatentIndex Score
54 records- 0195US10068997B1SiGe heterojunction bipolar transistor with crystalline raised base on germanium etch stop layerNEWPORT FAB LLC·Filed 2017·Granted Sep 4, 2018·12 cites·14 claims
- 0290US9640528B2Low-cost complementary BiCMOS integration schemeNEWPORT FAB LLC·Filed 2015·Granted May 2, 2017·8 cites·18 claims
- 0389US11276682B1Nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS) device and method of manufacturingNEWPORT FAB LLC·Filed 2020·Granted Mar 15, 2022·2 cites·20 claims
- 0487US10319716B2Substrate isolation for low-loss radio frequency (RF) circuitsNEWPORT FAB LLC·Filed 2017·Granted Jun 11, 2019·5 cites·21 claims
- 0580US11233159B2Fabrication of semiconductor structure having group III-V device on group IV substrate with separately formed contacts using different metal linersNEWPORT FAB LLC·Filed 2020·Granted Jan 25, 2022·1 cites·20 claims
- 0680US10649137B1Silicon-on-insulator (SOI) die including a light emitting layer pedestal-aligned with a light receiving segmentNEWPORT FAB LLC·Filed 2019·Granted May 12, 2020·4 cites·20 claims
- 0780US9577035B2Isolated through silicon vias in RF technologiesNEWPORT FAB LLC DBA JAZZ SEMICONDUCTOR·Filed 2013·Granted Feb 21, 2017·7 cites·20 claims
- 0878US11349280B2Semiconductor structure having group III-V device on group IV substrateNEWPORT FAB LLC·Filed 2020·Granted May 31, 2022·1 cites·20 claims
- 0977US10469035B2Amplifier using parallel high-speed and low-speed transistorsNEWPORT FAB LLC·Filed 2018·Granted Nov 5, 2019·3 cites·17 claims
- 1075US10290631B2Linearity and lateral isolation in a BiCMOS process through counter-doping of epitaxial silicon regionNEWPORT FAB LLC·Filed 2017·Granted May 14, 2019·2 cites·13 claims
- 1174US2025053032A1Method for Integration of Optoelectronic Devices Comprising Pockels MaterialsNEWPORT FAB LLC DBA TOWER SEMICONDUCTOR NEWPORT BEACH·Filed 2024·Application pending·0 cites
- 1273US11164740B2Semiconductor structure having porous semiconductor layer for RF devicesNEWPORT FAB LLC·Filed 2019·Granted Nov 2, 2021·1 cites·20 claims
- 1373US10991631B2High performance SiGe heterojunction bipolar transistors built on thin-film silicon-on-insulator substrates for radio frequency applicationsNEWPORT FAB LLC·Filed 2018·Granted Apr 27, 2021·1 cites·18 claims
- 1473US10177045B2Bulk CMOS RF switch with reduced parasitic capacitanceNEWPORT FAB LLC·Filed 2018·Granted Jan 8, 2019·1 cites·9 claims
- 1573US2025341738A1Method for Forming a Tantalum Nitride Resistive Heater for Thermally-Tunable Photonics DevicesNEWPORT FAB LLC DBA TOWER SEMICONDUCTOR NEWPORT BEACH·Filed 2025·Application pending·0 cites
- 1672US12324226B2Method of manufacturing bipolar complementary-metal-oxide-semiconductor (BiCMOS) devices using nickel silicideNEWPORT FAB LLC·Filed 2021·Granted Jun 3, 2025·0 cites·16 claims
- 1772US12248206B2Integration of optoelectronic devices comprising lithium niobate or other Pockels materialsNEWPORT FAB LLC·Filed 2022·Granted Mar 11, 2025·0 cites·19 claims
- 1872US12199090B2Method of manufacturing nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS)NEWPORT FAB LLC·Filed 2021·Granted Jan 14, 2025·0 cites·15 claims
- 1971US12009437B2Method for manufacturing a semiconductor structure having group III-V device on group IV substrate and contacts with liner stacksNEWPORT FAB LLC·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 2070US10325907B2Substrate isolation for low-loss radio frequency (RF) circuitsNEWPORT FAB LLC·Filed 2018·Granted Jun 18, 2019·1 cites·25 claims
- 2170US10243523B2Ultra-broadband transimpedance amplifiers (tia) for optical fiber communicationsUNIV CALIFORNIA·Filed 2017·Granted Mar 26, 2019·2 cites·14 claims
- 2269US9436092B2Semiconductor fabrication utilizing grating and trim masksNEWPORT FAB LLC·Filed 2012·Granted Sep 6, 2016·2 cites·20 claims
- 2368US12183845B2Group III-V device on group IV substrate using contacts with precursor stacksNEWPORT FAB LLC·Filed 2021·Granted Dec 31, 2024·0 cites·18 claims
- 2467US12347673B2Method for forming a semiconductor structure having a porous semiconductor layer in RF devicesNEWPORT FAB LLC·Filed 2021·Granted Jul 1, 2025·0 cites·20 claims
- 2567US2024126107A1Tantalum Nitride Resistive Heater for Thermally-Tunable Photonics DevicesNEWPORT FAB LLC DBA TOWER SEMICONDUCTOR NEWPORT NEWPORT BEACH·Filed 2022·Application pending·0 cites
- 2663US12374630B2Stress-reduced silicon photonics semiconductor waferNEWPORT FAB LLC·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
- 2763US11581452B2Semiconductor structure having group III-V device on group IV substrate and contacts with precursor stacksNEWPORT FAB LLC·Filed 2020·Granted Feb 14, 2023·0 cites·20 claims
- 2863US10996081B2Integrated optical/electrical probe card for testing optical, electrical, and optoelectronic devices in a semiconductor dieNEWPORT FAB LLC·Filed 2019·Granted May 4, 2021·1 cites·20 claims
- 2963US9673191B2Efficient fabrication of BiCMOS devicesNEWPORT FAB LLC·Filed 2015·Granted Jun 6, 2017·1 cites·17 claims
- 3062US12456701B2Efficient integration of a first substrate without solder bumps with a second substrate having solder bumpsNEWPORT FAB LLC·Filed 2022·Granted Oct 28, 2025·0 cites·20 claims
- 3162US11545587B2Semiconductor structure having group III-V device on group IV substrate and contacts with liner stacksNEWPORT FAB LLC·Filed 2020·Granted Jan 3, 2023·0 cites·19 claims
- 3262US11081610B2Anode up—cathode down silicon and germanium photodiodeNEWPORT FAB LLC·Filed 2019·Granted Aug 3, 2021·0 cites·20 claims
- 3362US10892374B2Method for fabrication of germanium photodiode with silicon capNEWPORT FAB LLC·Filed 2020·Granted Jan 12, 2021·0 cites·20 claims
- 3461US10297591B2BiCMOS integration using a shared SiGe layerNEWPORT FAB LLC·Filed 2015·Granted May 21, 2019·1 cites·20 claims
- 3561US10290630B2BiCMOS integration with reduced masking stepsNEWPORT FAB LLC·Filed 2015·Granted May 14, 2019·1 cites·10 claims
- 3661US2025113502A1Method for Integration of Tantalum Nitride Resistive Heater for Photonics Devices and Related StructureNEWPORT FAB LLC DBA TOWER SEMICONDUCTOR NEWPORT BEACH·Filed 2024·Application pending·0 cites
- 3760US9673081B2Isolated through silicon via and isolated deep silicon via having total or partial isolationNEWPORT FAB LLC·Filed 2013·Granted Jun 6, 2017·1 cites·9 claims
- 3859US11271028B2Germanium on insulator for CMOS imagers in the short wave infraredTRIEYE LTD·Filed 2019·Granted Mar 8, 2022·0 cites·14 claims
- 3958US11296482B2Semiconductor structure having group III-V chiplet on group IV substrate and cavity in proximity to heating elementNEWPORT FAB LLC·Filed 2020·Granted Apr 5, 2022·0 cites·20 claims
- 4058US2024128213A1Platinum-Based Solder Body Contacts for Integration of a First Substrate with a Second SubstrateNEWPORT FAB LLC DBA TOWER SEMICONDUCTOR NEWPORT BEACH·Filed 2023·Application pending·0 cites
- 4157US10892373B2Germanium photodiode with silicon capNEWPORT FAB LLC·Filed 2019·Granted Jan 12, 2021·0 cites·19 claims
- 4256US2025081547A1High Voltage Breakdown Resistant Bipolar TransistorNEWPORT FAB LLC DBA TOWER SEMICONDUCTOR NEWPORT BEACH·Filed 2023·Application pending·0 cites
- 4355US10347625B2Linearity and lateral isolation in a BiCMOS process through counter-doping of epitaxial silicon regionNEWPORT FAB LLC·Filed 2018·Granted Jul 9, 2019·0 cites·21 claims
- 4454US10622262B2High performance SiGe heterojunction bipolar transistors built on thin film silicon-on-insulator substrates for radio frequency applicationsNEWPORT FAB LLC·Filed 2017·Granted Apr 14, 2020·0 cites·22 claims
- 4552US11195920B2Semiconductor structure having porous semiconductor segment for RF devices and bulk semiconductor region for non-RF devicesNEWPORT FAB LLC·Filed 2019·Granted Dec 7, 2021·0 cites·19 claims
- 4651US11929442B2Structure and method for process control monitoring for group III-V devices integrated with group IV substrateNEWPORT FAB LLC·Filed 2020·Granted Mar 12, 2024·0 cites·20 claims
- 4751US10177044B2Bulk CMOS RF switch with reduced parasitic capacitanceNEWPORT FAB LLC·Filed 2017·Granted Jan 8, 2019·0 cites·8 claims
- 4850US11830961B2Silicon nitride hard mask for epitaxial germanium on siliconNEWPORT FAB LLC·Filed 2018·Granted Nov 28, 2023·0 cites·13 claims
- 4949US10529836B1SiGe heterojunction bipolar transistor with crystalline raised base on germanium etch stop layerNEWPORT FAB LLC·Filed 2018·Granted Jan 7, 2020·0 cites·8 claims
- 5045US9941353B2Structure and method for mitigating substrate parasitics in bulk high resistivity substrate technologyNEWPORT FAB LLC·Filed 2016·Granted Apr 10, 2018·0 cites·18 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →