Inventor · disambiguated record
Naoyuki Ohse
Also filed as: OHSE NAOYUKI
21 granted patents·10 pending applications·11 citations·filing 2010–2024
89Inventor score
Files withFUJI ELECTRIC CO LTD31
Top patents by PatentIndex Score
31 records- 0182US11929400B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2021·Granted Mar 12, 2024·1 cites·13 claims
- 0275US10600921B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Mar 24, 2020·2 cites·8 claims
- 0375US10374080B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Aug 6, 2019·2 cites·5 claims
- 0475US9893162B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Feb 13, 2018·2 cites·6 claims
- 0574US10439060B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Oct 8, 2019·2 cites·4 claims
- 0674US2024405084A1Semiconductor device having gate electrode and interlayer insulating film provided in trenchFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 0773US10453923B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Oct 22, 2019·2 cites·11 claims
- 0860US2024413080A1Semiconductor device and method for producing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 0959US12080762B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·8 claims
- 1059US2024387723A1Silicon carbide semiconductor device and method for manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 1158US2024332363A1Silicon carbide semiconductor device and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 1258US2024290842A1Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2023·Application pending·0 cites
- 1358US2024321947A1Silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 1457US2024194781A1Silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2023·Application pending·0 cites
- 1554US11081564B2Semiconductor device and method for manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Aug 3, 2021·0 cites·12 claims
- 1652US12094939B2Semiconductor device having a gate electrode, an interlayer insulating film and a barrier metal provided in a trenchFUJI ELECTRIC CO LTD·Filed 2018·Granted Sep 17, 2024·0 cites·7 claims
- 1751US11527634B2Silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2021·Granted Dec 13, 2022·0 cites·9 claims
- 1846US11411093B2Method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·9 claims
- 1946US11309438B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2020·Granted Apr 19, 2022·0 cites·8 claims
- 2046US11233124B2Silicon carbide semiconductor device and manufacturing method for silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Jan 25, 2022·0 cites·14 claims
- 2145US11271118B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2020·Granted Mar 8, 2022·0 cites·15 claims
- 2244US10629725B2Semiconductor device having semiconductor regions with an interval therebetween in a gate pad regionFUJI ELECTRIC CO LTD·Filed 2018·Granted Apr 21, 2020·0 cites·9 claims
- 2341US10763353B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Sep 1, 2020·0 cites·5 claims
- 2441US10665668B2Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted May 26, 2020·0 cites·11 claims
- 2541US10283591B2Silicon carbide semiconductor device and method of manufacturing the silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted May 7, 2019·0 cites·6 claims
- 2639US10693002B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Jun 23, 2020·0 cites·15 claims
- 2739US10651270B2Semiconductor device having a trench structureFUJI ELECTRIC CO LTD·Filed 2017·Granted May 12, 2020·0 cites·5 claims
- 2839US10304930B2Semiconductor device implanted with arsenic and nitrogenFUJI ELECTRIC CO LTD·Filed 2017·Granted May 28, 2019·0 cites·5 claims
- 2939US2018308972A1Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Application pending·0 cites
- 3038US2018358463A1Semiconductor device and method of manufacturing a semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Application pending·0 cites
- 3132US2013000728A1Photovoltaic cell and manufacturing method thereofFUJI ELECTRIC CO LTD·Filed 2010·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →