Inventor · disambiguated record

Akiyoshi Tamura

Also filed as: TAMURA AKIYOSHI

29 granted patents·12 pending applications·792 citations·filing 1986–2013

97Inventor score

Technology areasH10D H10P H10W

Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 PANASONIC CORP10 MATSUSHITA ELECTRONICS CORP2 NAKAZAWA KAZUSHI1

Top patents by PatentIndex Score

41 records

0199US5616947ASemiconductor device having an MIS structureMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Apr 1, 1997·565 cites·6 claims
0289US7728357B2Heterojunction bipolar transistor and manufacturing method thereofPANASONIC CORP·Filed 2006·Granted Jun 1, 2010·19 cites·10 claims
0383US7989845B2Semiconductor device having a hetero-junction bipolar transistor and manufacturing method thereofPANASONIC CORP·Filed 2008·Granted Aug 2, 2011·9 cites·15 claims
0479US7001820B1Heterojunction bipolar transistor and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Feb 21, 2006·9 cites·10 claims
0574US4992387AMethod for fabrication of self-aligned asymmetric field effect transistorsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1990·Granted Feb 12, 1991·37 cites·4 claims
0671US8436399B2Semiconductor deviceNAKAZAWA KAZUSHI·Filed 2010·Granted May 7, 2013·4 cites·18 claims
0771US7144765B2Semiconductor device with Schottky electrode including lanthanum and boron, and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Dec 5, 2006·4 cites·10 claims
0868US8716756B2Semiconductor devicePANASONIC CORP·Filed 2013·Granted May 6, 2014·2 cites·15 claims
0962US7495268B2Semiconductor device and manufacturing method of the samePANASONIC CORP·Filed 2007·Granted Feb 24, 2009·2 cites·7 claims
1062US5523623AOhmic electrode for a p-type compound semiconductor and a bipolar transistor incorporating the ohmic electrodeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Jun 4, 1996·20 cites·15 claims
1161US8017975B2Semiconductor devicePANASONIC CORP·Filed 2009·Granted Sep 13, 2011·2 cites·4 claims
1258US7176099B2Hetero-junction bipolar transistor and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Feb 13, 2007·1 cites·4 claims
1358US5336361AMethod of manufacturing an MIS-type semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Aug 9, 1994·27 cites·3 claims
1457US7012337B2Semiconductor device including a photosensitive resin covering at least a portion of a substrate having a via holeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Mar 14, 2006·8 cites·7 claims
1557US6982141B2Semiconductor device and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jan 3, 2006·8 cites·20 claims
1656US6903388B2Hetero-junction bipolar transistor and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 7, 2005·6 cites·13 claims
1753US7012285B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Mar 14, 2006·8 cites·10 claims
1852US6967360B2Pseudomorphic high electron mobility transistor with Schottky electrode including lanthanum and boron, and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 22, 2005·4 cites·4 claims
1952US5907177ASemiconductor device having a tapered gate electrodeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted May 25, 1999·16 cites·8 claims
2049US7091528B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 15, 2006·4 cites·9 claims
2145US6037200ACompound semiconductor device and fabrication methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Mar 14, 2000·11 cites·10 claims
2245US2010171151A1Heterojunction bipolar transistor and manufacturing method thereofPANASONIC CORP·Filed 2009·Application pending·0 cites
2344US2011250726A1Semiconductor device having a hetero-junction bipolar transistor and manufacturing method thereofPANASONIC CORP·Filed 2011·Application pending·0 cites
2444US2008088020A1Semiconductor device and manufacturing method of the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2007·Application pending·0 cites
2544US2009230482A1Semiconductor device and manufacturing method thereofPANASONIC CORP·Filed 2009·Application pending·0 cites
2643US5994728AField effect transistor and method for producing the sameMATSUSHITA ELECTRONICS CORP·Filed 1996·Granted Nov 30, 1999·9 cites·14 claims
2742US4752592AAnnealing method for compound semiconductor substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1986·Granted Jun 21, 1988·13 cites·3 claims
2842US2008176391A1Method for manufacturing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2008·Application pending·0 cites
2941US2006273396A1Semiconductor device and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
3040US7238542B2Manufacturing method for compound semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jul 3, 2007·0 cites·17 claims
3139US2006237753A1Semiconductor device and method for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
3239US2006284212A1Hetero-junction bipolar transistor and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
3338US2006076585A1Semiconductor resistor and method for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Application pending·0 cites
3438US2006281237A1Method of manufacturing junction field effect transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
3537US7301181B2Heterojunction bipolar transistor having an emitter layer made of a semiconductor material including aluminumMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Nov 27, 2007·0 cites·5 claims
3636US2010314696A1Field-effect transistor and method of fabricating samePANASONIC CORP·Filed 2010·Application pending·0 cites
3735US6953729B2Heterojunction field effect transistor and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Oct 11, 2005·0 cites·10 claims
3835US2010187571A1Semiconductor device and manufacturing method thereofPANASONIC CORP·Filed 2010·Application pending·0 cites
3933US6380573B1Semiconductor memory device and method for producing the sameMATSUSHITA ELECTRONICS CORP·Filed 1999·Granted Apr 30, 2002·2 cites·31 claims
4030US5942772ASemiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Aug 24, 1999·1 cites·5 claims
4130US5162242AMethod for annealing compound semiconductor devicesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Nov 10, 1992·1 cites·10 claims

Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →