Inventor · disambiguated record
Narayan Solayappan
Also filed as: SOLAYAPPAN NARAYAN
33 granted patents·9 pending applications·1,548 citations·filing 1996–2010
98Inventor score
Top patents by PatentIndex Score
42 records- 0198US6110531AMethod and apparatus for preparing integrated circuit thin films by chemical vapor depositionSYMETRIX CORP·Filed 1997·Granted Aug 29, 2000·523 cites·31 claims
- 0296US6511718B1Method and apparatus for fabrication of thin films by chemical vapor depositionSYMETRIX CORP·Filed 1998·Granted Jan 28, 2003·191 cites·25 claims
- 0393US6258733B1Method and apparatus for misted liquid source deposition of thin film with reduced mist particle sizeSYMETRIX CORP·Filed 2000·Granted Jul 10, 2001·60 cites·6 claims
- 0492US7075134B2Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the sameSYMETRIX CORP·Filed 2003·Granted Jul 11, 2006·57 cites·60 claims
- 0591US6781184B2Barrier layers for protecting metal oxides from hydrogen degradationSYMETRIX CORP·Filed 2001·Granted Aug 24, 2004·48 cites·53 claims
- 0688US6495878B1Interlayer oxide containing thin films for high dielectric constant applicationSYMETRIX CORP·Filed 1999·Granted Dec 17, 2002·64 cites·36 claims
- 0787US6326315B1Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including sameSYMETRIX CORP·Filed 2000·Granted Dec 4, 2001·43 cites·27 claims
- 0886US6831313B2Ferroelectric composite material, method of making same and memory utilizing sameSYMETRIX CORP·Filed 2002·Granted Dec 14, 2004·34 cites·14 claims
- 0985US6787181B2Chemical vapor deposition method of making layered superlattice materials using trimethylbismuthSYMETRIX CORP·Filed 2001·Granted Sep 7, 2004·34 cites·23 claims
- 1085US6541279B2Method for forming an integrated circuitSYMETRIX CORP·Filed 2001·Granted Apr 1, 2003·24 cites·41 claims
- 1183US6559469B1Ferroelectric and high dielectric constant transistorsSYMETRIX CORP·Filed 2000·Granted May 6, 2003·28 cites·53 claims
- 1279US6104049AFerroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making sameSYMETRIX CORP·Filed 1999·Granted Aug 15, 2000·53 cites·11 claims
- 1378US6562678B1Chemical vapor deposition process for fabricating layered superlattice materialsSYMETRIX CORP·Filed 2000·Granted May 13, 2003·14 cites·44 claims
- 1478US6171934B1Recovery of electronic properties in process-damaged ferroelectrics by voltage-cyclingSYMETRIX CORP·Filed 1998·Granted Jan 9, 2001·39 cites·15 claims
- 1578US5962069AProcess for fabricating layered superlattice materials and AB03 type metal oxides without exposure to oxygen at high temperaturesSYMETRIX CORP·Filed 1997·Granted Oct 5, 1999·52 cites·26 claims
- 1673US6322849B2Recovery of electronic properties in hydrogen-damaged ferroelectrics by low-temperature annealing in an inert gasSYMETRIX CORP·Filed 1998·Granted Nov 27, 2001·33 cites·7 claims
- 1772US6437380B1Ferroelectric device with bismuth tantalate capping layer and method of making sameSYMETRIX CORP·Filed 2001·Granted Aug 20, 2002·17 cites·18 claims
- 1871US6815223B2Low thermal budget fabrication of ferroelectric memory using RTPSYMETRIX CORP·Filed 2002·Granted Nov 9, 2004·16 cites·29 claims
- 1971US5843516ALiquid source formation of thin films using hexamethyl-disilazaneSYMETRIX CORP·Filed 1996·Granted Dec 1, 1998·30 cites·13 claims
- 2070US6582972B1Low temperature oxidizing method of making a layered superlattice materialSYMETRIX CORP·Filed 2000·Granted Jun 24, 2003·13 cites·28 claims
- 2170US5849071ALiquid source formation of thin films using hexamethyl-disilazaneSYMETRIX CORP·Filed 1997·Granted Dec 15, 1998·27 cites·2 claims
- 2269US5997642AMethod and apparatus for misted deposition of integrated circuit quality thin filmsSYMETRIX CORP·Filed 1997·Granted Dec 7, 1999·31 cites·32 claims
- 2368US6706585B2Chemical vapor deposition process for fabricating layered superlattice materialsSYMETRIX CORP·Filed 2003·Granted Mar 16, 2004·7 cites·17 claims
- 2466US6867452B2Interlayer oxide containing thin films for high dielectric constant application of the formula AB2O6 or AB2O7SYMETRIX CORP·Filed 2002·Granted Mar 15, 2005·7 cites·35 claims
- 2566US6116184AMethod and apparatus for misted liquid source deposition of thin film with reduced mist particle sizeSYMETRIX CORP·Filed 1997·Granted Sep 12, 2000·27 cites·14 claims
- 2666US5784310ALow imprint ferroelectric material for long retention memory and method of making the sameSYMETRIX CORP·Filed 1997·Granted Jul 21, 1998·26 cites·8 claims
- 2763US7064374B2Barrier layers for protecting metal oxides from hydrogen degradationSYMETRIX CORP·Filed 2004·Granted Jun 20, 2006·7 cites·9 claims
- 2863US6743643B2Stacked memory cell having diffusion barriersSYMETRIX CORP·Filed 2003·Granted Jun 1, 2004·9 cites·27 claims
- 2960US7459318B2Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the sameSYMETRIX CORP·Filed 2006·Granted Dec 2, 2008·1 cites·13 claims
- 3058US6245580B1Low temperature process for fabricating layered superlattice materials and making electronic devices including sameSYMETRIX CORP·Filed 1999·Granted Jun 12, 2001·21 cites·31 claims
- 3150US2007212510A1Thin silicon or germanium sheets and photovoltaics formed from thin sheetsHIESLMAIR HENRY·Filed 2007·Application pending·0 cites
- 3246US7187079B2Stacked memory cell having diffusion barriersSYMETRIX CORP·Filed 2003·Granted Mar 6, 2007·1 cites·6 claims
- 3346US5883828ALow imprint ferroelectric material for long retention memory and method of making the sameSYMETRIX CORP·Filed 1998·Granted Mar 16, 1999·10 cites·3 claims
- 3446US2009017292A1Reactive flow deposition and synthesis of inorganic foilsHIESLMAIR HENRY·Filed 2008·Application pending·0 cites
- 3545US2010190288A1Thin silicon or germanium sheets and photovolatics formed from thin sheetsNANOGRAM CORP·Filed 2010·Application pending·0 cites
- 3642US2004089920A1Stacked memory cell and process of fabricating sameSYMETRIX CORP·Filed 2003·Application pending·0 cites
- 3741US2003102531A1Stacked memory cell and process of fabricating sameSYMETRIX CORP·Filed 2002·Application pending·0 cites
- 3840US2003152813A1Lanthanide series layered superlattice materials for integrated circuit appalicationsSYMETRIX CORP·Filed 2001·Application pending·0 cites
- 3940US2004211998A1Lanthanide series layered superlattice materials for integrated circuit applicationsSYMETRIX CORP·Filed 2004·Application pending·0 cites
- 4036US2002168785A1Ferroelectric composite material, method of making same, and memory utilizing sameSYMETRIX CORP·Filed 2001·Application pending·0 cites
- 4135US2005094457A1Ferroelectric memory and method of operating sameSYMETRIX CORP·Filed 2003·Application pending·0 cites
- 4231US5846597ALiquid source formation of thin films using hexamethyl-disilazaneSYMETRIX CORP·Filed 1997·Granted Dec 8, 1998·1 cites·4 claims
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