Inventor · disambiguated record
Yoichi Miyai
Also filed as: MIYAI YOICHI
21 granted patents·2 pending applications·331 citations·filing 1992–2003
95Inventor score
Top patents by PatentIndex Score
23 records- 0184US6362506B1Minimization-feasible word line structure for DRAM cellTEXAS INSTRUMENTS INC·Filed 1999·Granted Mar 26, 2002·52 cites·8 claims
- 0280US5618750AMethod of making fuse with non-corrosive termination of corrosive fuse materialTEXAS INSTRUMENTS INC·Filed 1995·Granted Apr 8, 1997·65 cites·5 claims
- 0378US5514628ATwo-step sinter method utilized in conjunction with memory cell replacement by redundanciesTEXAS INSTRUMENTS INC·Filed 1995·Granted May 7, 1996·65 cites·7 claims
- 0461US5470778AMethod of manufacturing a semiconductor deviceTEXAS INSTRUMENTS INC·Filed 1994·Granted Nov 28, 1995·15 cites·23 claims
- 0558US6797563B2Method of forming cross point type DRAM cellTEXAS INSTRUMENTS INC·Filed 2003·Granted Sep 28, 2004·7 cites·19 claims
- 0656US5754432AApparatus and method for estimating chip yieldTEXAS INSTRUMENTS INC·Filed 1995·Granted May 19, 1998·26 cites·9 claims
- 0752US6184080B1Method of the simultaneous formation for the storage node contacts, bit line contacts, and the contacts for periphery circuitsTEXAS INSTRUMENTS INC·Filed 1999·Granted Feb 6, 2001·12 cites·7 claims
- 0852US5734184ADRAM COB bit line and moat arrangementTEXAS INSTRUMENTS INC·Filed 1996·Granted Mar 31, 1998·14 cites·9 claims
- 0950US6580112B2Method for fabricating an open can-type stacked capacitor on an uneven surfaceTEXAS INSTRUMENTS INC·Filed 2001·Granted Jun 17, 2003·4 cites·6 claims
- 1046US5641701AMethod for fabricating a semiconductor device with laser programable fusesTEXAS INSTRUMENTS INC·Filed 1995·Granted Jun 24, 1997·13 cites·7 claims
- 1145US6245664B1Method and system of interconnecting conductive elements in an integrated circuitTEXAS INSTRUMENTS INC·Filed 1998·Granted Jun 12, 2001·11 cites·16 claims
- 1245US5317177ASemiconductor device and method of manufacturing the sameTEXAS INSTRUMENTS INC·Filed 1992·Granted May 31, 1994·8 cites·20 claims
- 1343US5861649ATrench-type semiconductor memory deviceTEXAS INSTRUMENTS INC·Filed 1992·Granted Jan 19, 1999·9 cites·10 claims
- 1441US6434063B1Method of repairing semiconductor memory, electron-beam memory repairing apparatus and redundancy memory circuit to which the method of repairing semiconductor memory is applicableADVANTEST CORP·Filed 1998·Granted Aug 13, 2002·8 cites·4 claims
- 1538US2001044199A1Semiconductor device and manufacture thereofTEXAS INSTRUMENTS INC·Filed 2001·Application pending·0 cites
- 1637US6563155B2Cross point type DRAM cell composed of a pillar having an active regionTEXAS INSTRUMENTS INC·Filed 1999·Granted May 13, 2003·4 cites·19 claims
- 1737US5610100AMethod for concurrently forming holes for interconnection between different conductive layers and a substrate element or circuit element close to the substrate surfaceTEXAS INSTRUMENTS INC·Filed 1995·Granted Mar 11, 1997·9 cites·14 claims
- 1836US2002173055A1Redundancy memory circuitFiled 2002·Application pending·0 cites
- 1935US5985677AMethod of repairing semiconductor memory, electron-beam memory repairing apparatus and redundancy memory circuit to which the method of repairing semiconductor memory is applicableADVANTEST CORP·Filed 1997·Granted Nov 16, 1999·5 cites·10 claims
- 2034US6291293B1Method for fabricating an open can-type stacked capacitor on an uneven surfaceTEXAS INSTRUMENTS INC·Filed 1999·Granted Sep 18, 2001·3 cites·25 claims
- 2130US6657308B1Method for forming a self-aligned contactTEXAS INSTRUMENTS INC·Filed 1999·Granted Dec 2, 2003·1 cites·4 claims
- 2230US6004870AMethod for forming a self-aligned contactTEXAS INSTRUMENTS INC·Filed 1998·Granted Dec 21, 1999·0 cites·12 claims
- 2329US6204118B1Method for fabrication an open can-type stacked capacitor on local topologyTEXAS INSTRUMENTS INC·Filed 1999·Granted Mar 20, 2001·0 cites·20 claims
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