Inventor · disambiguated record
Landon B. Vines
Also filed as: VINES LANDON · VINES LANDON B
20 granted patents·582 citations·filing 1992–2001
96Inventor score
Top patents by PatentIndex Score
20 records- 0186US6331136B1CMP pad conditioner arrangement and method thereforKONINKL PHILIPS ELECTRONICS NV·Filed 2000·Granted Dec 18, 2001·41 cites·28 claims
- 0283US6077151ATemperature control carrier head for chemical mechanical polishing processVLSI TECHNOLOGY INC·Filed 1999·Granted Jun 20, 2000·59 cites·13 claims
- 0381US6048789AIC interconnect formation with chemical-mechanical polishing and silica etching with solution of nitric and hydrofluoric acidsVLSI TECHNOLOGY INC·Filed 1997·Granted Apr 11, 2000·72 cites·1 claims
- 0479US5745990ATitanium boride and titanium silicide contact barrier formation for integrated circuitsVLSI TECHNOLOGY INC·Filed 1995·Granted May 5, 1998·48 cites·6 claims
- 0575US5294571ARapid thermal oxidation of silicon in an ozone ambientVLSI TECHNOLOGY INC·Filed 1992·Granted Mar 15, 1994·60 cites·17 claims
- 0671US5728602ASemiconductor wafer manufacturing process with high-flow-rate low-pressure purge cyclesVLSI TECHNOLOGY INC·Filed 1996·Granted Mar 17, 1998·37 cites·5 claims
- 0771US5610105ADensification in an intermetal dielectric filmVLSI TECHNOLOGY INC·Filed 1994·Granted Mar 11, 1997·49 cites·18 claims
- 0867US5434104AMethod of using corrosion prohibiters in aluminum alloy filmsVLSI TECHNOLOGY INC·Filed 1994·Granted Jul 18, 1995·26 cites·10 claims
- 0960US5989948AMethods of forming pairs of transistors, and methods of forming pairs of transistors having different voltage tolerancesVLSI TECHNOLOGY INC·Filed 1997·Granted Nov 23, 1999·20 cites·35 claims
- 1060US5286518AIntegrated-circuit processing with progressive intermetal-dielectric depositionVLSI TECHNOLOGY INC·Filed 1992·Granted Feb 15, 1994·30 cites·10 claims
- 1158US6429144B1Integrated circuit manufacture method with aqueous hydrogen fluoride and nitric acid oxide etchKONINKL PHILIPS ELECTRONICS NV·Filed 1999·Granted Aug 6, 2002·17 cites·13 claims
- 1258US6016001AMetal to amorphous silicon to metal anti-fuse structureVLSI TECHNOLOGY INC·Filed 1997·Granted Jan 18, 2000·24 cites·11 claims
- 1356US6824448B1CMP polisher substrate removal control mechanism and methodKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Nov 30, 2004·10 cites·12 claims
- 1456US6302771B1CMP pad conditioner arrangement and method thereforPHILIPS SEMICONDUCTOR INC·Filed 1999·Granted Oct 16, 2001·18 cites·23 claims
- 1552US5899707AMethod for making doped antifuse structuresVLSI TECHNOLOGY INC·Filed 1996·Granted May 4, 1999·19 cites·31 claims
- 1649US6346032B1Fluid dispensing fixed abrasive polishing padVLSI TECHNOLOGY INC·Filed 1999·Granted Feb 12, 2002·18 cites·3 claims
- 1742US6007641AIntegrated-circuit manufacture method with aqueous hydrogen-fluoride and nitric-acid oxide etchVLSI TECHNOLOGY INC·Filed 1997·Granted Dec 28, 1999·9 cites·7 claims
- 1838US6444502B1Method for forming strapless anti-fuse structureKONINKL PHILIPS ELECTRONICS NV·Filed 1998·Granted Sep 3, 2002·9 cites·4 claims
- 1937US5329161AMolybdenum boride barrier layers between aluminum and silicon at contact points in semiconductor devicesVLSI TECHNOLOGY INC·Filed 1992·Granted Jul 12, 1994·9 cites·8 claims
- 2033US5493926AMethod of identifying a weakest interface where delamination is most likely to occur in a multi-layer dielectric film stackVLSI TECHNOLOGY INC·Filed 1995·Granted Feb 27, 1996·7 cites·13 claims
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