Inventor · disambiguated record
Alexey Vasilyevitch Khvalkovskiy
Also filed as: KHVALKOVSKIY ALEXEY VASILYEVITCH
19 granted patents·228 citations·filing 2011–2018
94Inventor score
Top patents by PatentIndex Score
19 records- 0198US9130155B2Magnetic junctions having insertion layers and magnetic memories using the magnetic junctionsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 8, 2015·59 cites·31 claims
- 0296US9460397B2Quantum computing device spin transfer torque magnetic memorySAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 4, 2016·28 cites·20 claims
- 0396US9105830B2Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctionsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 11, 2015·21 cites·30 claims
- 0496US9076537B2Method and system for providing a magnetic tunneling junction using spin-orbit interaction based switching and memories utilizing the magnetic tunneling junctionKHVALKOVSKIY ALEXEY VASILYEVITCH·Filed 2012·Granted Jul 7, 2015·50 cites·43 claims
- 0591US9076954B2Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devicesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 7, 2015·15 cites·19 claims
- 0689US9490421B2Method and system for providing vertical spin transfer switched magnetic junctions and memories using such junctionsAPALKOV DMYTRO·Filed 2013·Granted Nov 8, 2016·7 cites·48 claims
- 0789US8766383B2Method and system for providing a magnetic junction using half metallic ferromagnetsAPALKOV DMYTRO·Filed 2012·Granted Jul 1, 2014·10 cites·22 claims
- 0887US8786039B2Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropyAPALKOV DMYTRO·Filed 2012·Granted Jul 22, 2014·11 cites·40 claims
- 0985US9087633B2Magnetic device having a magnetic material in a contact structure coupled to a magnetic element and method of manufacture thereofKHVALKOVSKIY ALEXEY VASILYEVITCH·Filed 2011·Granted Jul 21, 2015·7 cites·26 claims
- 1082US9166152B2Diffusionless transformations in MTJ stacksSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 20, 2015·4 cites·33 claims
- 1178US9076541B2Architecture for magnetic memories including magnetic tunneling junctions using spin-orbit interaction based switchingSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 7, 2015·6 cites·25 claims
- 1271US9478730B2Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memoriesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 25, 2016·4 cites·18 claims
- 1365US9203017B2Method and system for providing magnetic junctions including a package structure usable in spin transfer torque memoriesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 1, 2015·1 cites·20 claims
- 1465US8649214B2Magnetic memory including magnetic memory cells integrated with a magnetic shift register and methods thereofAPALKOV DMYTRO·Filed 2011·Granted Feb 11, 2014·3 cites·22 claims
- 1559US8697484B2Method and system for setting a pinned layer in a magnetic tunneling junctionAPALKOV DMYTRO·Filed 2011·Granted Apr 15, 2014·2 cites·8 claims
- 1645US10276226B2Method and system for determining temperature using a magnetic junctionSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 30, 2019·0 cites·1 claims
- 1743US10297300B2Method and system for determining temperature using a magnetic junctionSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 21, 2019·0 cites·9 claims
- 1837US9929339B2Method and system for providing magnetic junctions including self-initializing reference layersSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 27, 2018·0 cites·19 claims
- 1935US9741927B2Method and system for providing magnetic junctions having a gradient in magnetic ordering temperatureSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 22, 2017·0 cites·22 claims
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