Inventor · disambiguated record
Brent A. Wacaser
Also filed as: WACASER BRENT A
61 granted patents·2 pending applications·97 citations·filing 2010–2022
98Inventor score
Top patents by PatentIndex Score
63 records- 0197US9739728B1Automatic defect detection and classification for high throughput electron channeling contrast imagingIBM·Filed 2016·Granted Aug 22, 2017·16 cites·19 claims
- 0296US9401397B1Reduction of defect induced leakage in III-V semiconductor devicesIBM·Filed 2015·Granted Jul 26, 2016·11 cites·20 claims
- 0395US9935175B1Sidewall spacer for integration of group III nitride with patterned silicon substrateIBM·Filed 2017·Granted Apr 3, 2018·11 cites·20 claims
- 0494US9564494B1Enhanced defect reduction for heteroepitaxy by seed shape engineeringIBM·Filed 2015·Granted Feb 7, 2017·9 cites·20 claims
- 0593US9741532B1Multi-beam electron microscope for electron channeling contrast imaging of semiconductor materialIBM·Filed 2016·Granted Aug 22, 2017·10 cites·20 claims
- 0689US11411160B2Silicon-based Josephson junction for qubit devicesIBM·Filed 2020·Granted Aug 9, 2022·2 cites·12 claims
- 0788US9583562B2Reduction of defect induced leakage in III-V semiconductor devicesIBM·Filed 2015·Granted Feb 28, 2017·4 cites·7 claims
- 0888US9553153B1Post growth defect reduction for heteroepitaxial materialsIBM·Filed 2015·Granted Jan 24, 2017·4 cites·15 claims
- 0987US9698239B2Growing groups III-V lateral nanowire channelsIBM·Filed 2016·Granted Jul 4, 2017·3 cites·18 claims
- 1085US9527107B2Method and apparatus to apply material to a surfaceIBM·Filed 2013·Granted Dec 27, 2016·2 cites·19 claims
- 1184US9859091B1Automatic alignment for high throughput electron channeling contrast imagingIBM·Filed 2016·Granted Jan 2, 2018·2 cites·20 claims
- 1283US10460937B2Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial filmsIBM·Filed 2017·Granted Oct 29, 2019·2 cites·10 claims
- 1382US10103242B2Growing groups III-V lateral nanowire channelsIBM·Filed 2015·Granted Oct 16, 2018·2 cites·15 claims
- 1482US9412891B2Thermal receiver for high power solar concentrators and method of assemblyIBM·Filed 2012·Granted Aug 9, 2016·2 cites·17 claims
- 1582US9324896B2Thermal receiver for high power solar concentrators and method of assemblyIBM·Filed 2013·Granted Apr 26, 2016·2 cites·17 claims
- 1682US8574946B1Multi-element packaging of concentrator photovoltaic cellsMARTIN YVES C·Filed 2012·Granted Nov 5, 2013·5 cites·25 claims
- 1781US10043663B2Enhanced defect reduction for heteroepitaxy by seed shape engineeringIBM·Filed 2016·Granted Aug 7, 2018·2 cites·20 claims
- 1881US9397005B1Dual-material mandrel for epitaxial crystal growth on siliconIBM·Filed 2015·Granted Jul 19, 2016·2 cites·14 claims
- 1977US9859397B2Growing groups III-V lateral nanowire channelsIBM·Filed 2017·Granted Jan 2, 2018·1 cites·20 claims
- 2077US9653570B2Junction interlayer dielectric for reducing leakage current in semiconductor devicesIBM·Filed 2015·Granted May 16, 2017·2 cites·17 claims
- 2177US8633097B2Single-junction photovoltaic cellBEDELL STEPHEN W·Filed 2010·Granted Jan 21, 2014·1 cites·13 claims
- 2275US8321961B2Production scale fabrication method for high resolution AFM tipsCOHEN GUY·Filed 2010·Granted Nov 27, 2012·2 cites·19 claims
- 2374US12096702B2Epitaxial Josephson junction deviceIBM·Filed 2022·Granted Sep 17, 2024·0 cites·7 claims
- 2472US12224555B2Nanocavity monolayer laser monolithically integrated with LED pumpIBM·Filed 2019·Granted Feb 11, 2025·0 cites·13 claims
- 2572US11742632B2Nanocavity monolayer laser monolithically integrated with LED pumpIBM·Filed 2019·Granted Aug 29, 2023·0 cites·20 claims
- 2670US8834963B2Method for applying material to a surfaceIBM·Filed 2013·Granted Sep 16, 2014·0 cites·15 claims
- 2769US8659110B2Single-junction photovoltaic cellIBM·Filed 2013·Granted Feb 25, 2014·0 cites·6 claims
- 2865US11563162B2Epitaxial Josephson junction transmon deviceIBM·Filed 2020·Granted Jan 24, 2023·0 cites·12 claims
- 2965US10755925B2Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial filmsIBM·Filed 2019·Granted Aug 25, 2020·0 cites·20 claims
- 3064US10777665B2III-V and Zn based finFET structure formed using low temperature deposition techniquesIBM·Filed 2019·Granted Sep 15, 2020·0 cites·19 claims
- 3164US10763340B2Growing Groups III-V lateral nanowire channelsIBM·Filed 2018·Granted Sep 1, 2020·0 cites·12 claims
- 3260US10096697B2III-V FIN generation by lateral growth on silicon sidewallIBM·Filed 2018·Granted Oct 9, 2018·0 cites·16 claims
- 3360US10068994B2III-V fin generation by lateral growth on silicon sidewallIBM·Filed 2018·Granted Sep 4, 2018·0 cites·10 claims
- 3459US11003942B2Electron channeling pattern acquisition from small crystalline areasIBM·Filed 2019·Granted May 11, 2021·0 cites·20 claims
- 3559US10615178B2Dual-material mandrel for epitaxial crystal growth on siliconIBM·Filed 2016·Granted Apr 7, 2020·0 cites·2 claims
- 3659US10002929B2Reduction of defect induced leakage in III-V semiconductor devicesIBM·Filed 2016·Granted Jun 19, 2018·0 cites·17 claims
- 3758US10714303B2Enabling high throughput electron channeling contrast imaging (ECCI) by varying electron beam energyIBM·Filed 2018·Granted Jul 14, 2020·0 cites·18 claims
- 3858US10453683B2Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial filmsIBM·Filed 2017·Granted Oct 22, 2019·0 cites·10 claims
- 3958US10431672B1Method of forming a III-V and Zn based finFET structure using low temperature deposition techniquesIBM·Filed 2018·Granted Oct 1, 2019·0 cites·12 claims
- 4058US10431956B2Nanocavity monolayer laser monolithically integrated with LED pumpIBM·Filed 2015·Granted Oct 1, 2019·0 cites·18 claims
- 4158US9754969B2Dual-material mandrel for epitaxial crystal growth on siliconIBM·Filed 2016·Granted Sep 5, 2017·0 cites·15 claims
- 4257US11349061B2Glassy carbon mask for immersion implant and selective laser annealIBM·Filed 2020·Granted May 31, 2022·0 cites·21 claims
- 4357US10043920B2Highly responsive III-V photodetectors using ZnO:Al as n-type emitterIBM·Filed 2017·Granted Aug 7, 2018·0 cites·20 claims
- 4457US9905637B2Reduction of defect induced leakage in III-V semiconductor devicesIBM·Filed 2016·Granted Feb 27, 2018·0 cites·17 claims
- 4556US10157993B2Low resistance contact for semiconductor devicesIBM·Filed 2016·Granted Dec 18, 2018·0 cites·16 claims
- 4656US10038057B2Junction interlayer dielectric for reducing leakage current in semiconductor devicesIBM·Filed 2017·Granted Jul 31, 2018·0 cites·20 claims
- 4755US10417519B2Electron channeling pattern acquisition from small crystalline areasIBM·Filed 2017·Granted Sep 17, 2019·0 cites·15 claims
- 4855US10319838B2III-V fin generation by lateral growth on silicon sidewallIBM·Filed 2015·Granted Jun 11, 2019·0 cites·10 claims
- 4955US9972688B2Post growth defect reduction for heteroepitaxial materialsIBM·Filed 2016·Granted May 15, 2018·0 cites·17 claims
- 5055US9647063B2Nanoscale chemical templating with oxygen reactive materialsGLOBALFOUNDRIES INC·Filed 2015·Granted May 9, 2017·0 cites·15 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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