Inventor · disambiguated record
Gregory A. Schrantz
Also filed as: SCHRANTZ GREGORY · SCHRANTZ GREGORY A
11 granted patents·532 citations·filing 1985–1995
93Inventor score
Files withHARRIS CORP11
Top patents by PatentIndex Score
11 records- 0191US5272104ABonded wafer process incorporating diamond insulatorHARRIS CORP·Filed 1993·Granted Dec 21, 1993·122 cites·17 claims
- 0289US5552345ADie separation method for silicon on diamond circuit structuresHARRIS CORP·Filed 1993·Granted Sep 3, 1996·104 cites·75 claims
- 0386US4912053AIon implanted JFET with self-aligned source and drainHARRIS CORP·Filed 1988·Granted Mar 27, 1990·53 cites·22 claims
- 0483US5683939ADiamond insulator devices and method of fabricationHARRIS CORP·Filed 1995·Granted Nov 4, 1997·73 cites·19 claims
- 0578US5650639AIntegrated circuit with diamond insulatorHARRIS CORP·Filed 1994·Granted Jul 22, 1997·50 cites·24 claims
- 0676US5561303ASilicon on diamond circuit structureHARRIS CORP·Filed 1994·Granted Oct 1, 1996·54 cites·27 claims
- 0766US5008719ADual layer surface gate JFET having enhanced gate-channel breakdown voltageHARRIS CORP·Filed 1989·Granted Apr 16, 1991·22 cites·17 claims
- 0862US5120669AMethod of forming self-aligned top gate channel barrier region in ion-implanted JFETHARRIS CORP·Filed 1991·Granted Jun 9, 1992·23 cites·8 claims
- 0952US5118632ADual layer surface gate JFET having enhanced gate-channel breakdown voltageHARRIS CORP·Filed 1990·Granted Jun 2, 1992·15 cites·9 claims
- 1038US5027187APolycrystalline silicon ohmic contacts to group III-arsenide compound semiconductorsHARRIS CORP·Filed 1990·Granted Jun 25, 1991·10 cites·4 claims
- 1137US4683485ATechnique for increasing gate-drain breakdown voltage of ion-implanted JFETHARRIS CORP·Filed 1985·Granted Jul 28, 1987·6 cites·6 claims
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