Inventor · disambiguated record
Jeff J. Xu
Also filed as: XU JEFF J · XU JEFF JUNHAO
60 granted patents·3 pending applications·2,208 citations·filing 2005–2023
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG20TAIWAN SEMICONDUCTOR MFG CO LTD19XU JEFF J9YAO LIANG-GI3FANG ZIWEI2
Top patents by PatentIndex Score
63 records- 0199US8497177B1Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 30, 2013·252 cites·20 claims
- 0299US8415718B2Method of forming epi film in substrate trenchXU JEFF J·Filed 2010·Granted Apr 9, 2013·197 cites·17 claims
- 0399US8367498B2Fin-like field effect transistor (FinFET) device and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 5, 2013·267 cites·19 claims
- 0499US8053299B2Method of fabrication of a FinFET elementTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Nov 8, 2011·244 cites·15 claims
- 0599US8039179B2Integrated circuit layout designTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Oct 18, 2011·121 cites·20 claims
- 0698US8497528B2Method for fabricating a strained structureLEE TSUNG-LIN·Filed 2010·Granted Jul 30, 2013·241 cites·19 claims
- 0798US7910453B2Storage nitride encapsulation for non-planar sonos NAND flash charge retentionTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Mar 22, 2011·396 cites·18 claims
- 0898US7862962B2Integrated circuit layout designTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 4, 2011·46 cites·20 claims
- 0997US8623728B2Method for forming high germanium concentration SiGe stressorCHANG CHIH-HAO·Filed 2010·Granted Jan 7, 2014·38 cites·20 claims
- 1097US7989355B2Method of pitch halvingTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Aug 2, 2011·58 cites·20 claims
- 1196US9564529B2Method for fabricating a strained structure and structure formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·10 cites·20 claims
- 1296US9142643B2Method for forming epitaxial featureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 22, 2015·25 cites·20 claims
- 1395US9147594B2Method for fabricating a strained structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 29, 2015·13 cites·20 claims
- 1495US8597995B2Metal gate device with low temperature oxygen scavengingXU JEFF J·Filed 2011·Granted Dec 3, 2013·22 cites·20 claims
- 1595US8367534B2Non-uniformity reduction in semiconductor planarizationTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 5, 2013·16 cites·20 claims
- 1694US9190417B2Fin-like field effect transistor (FinFET) device and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 17, 2015·13 cites·20 claims
- 1793US9660082B2Integrated circuit transistor structure with high germanium concentration SiGe stressorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 23, 2017·11 cites·16 claims
- 1893US8241823B2Method of fabrication of a semiconductor device having reduced pitchSHIEH MING-FENG·Filed 2011·Granted Aug 14, 2012·11 cites·20 claims
- 1993US7915112B2Metal gate stress film for mobility enhancement in FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Mar 29, 2011·36 cites·20 claims
- 2093US7235478B2Polymer spacer formationINTEL CORP·Filed 2005·Granted Jun 26, 2007·41 cites·25 claims
- 2192US9166022B2Fin-like field effect transistor (FinFET) device and method of manufacturing sameXU JEFF J·Filed 2010·Granted Oct 20, 2015·13 cites·20 claims
- 2292US8704280B2Semiconductor device with strained channels induced by high-k capping metal layersXU JEFF J·Filed 2011·Granted Apr 22, 2014·14 cites·4 claims
- 2392US8304841B2Metal gate transistor, integrated circuits, systems, and fabrication methods thereofXU JEFF J·Filed 2010·Granted Nov 6, 2012·22 cites·20 claims
- 2491US8629426B2Source/drain stressor having enhanced carrier mobility manufacturing sameLIN CHIN-HSIANG·Filed 2010·Granted Jan 14, 2014·11 cites·13 claims
- 2590US11171134B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 9, 2021·3 cites·20 claims
- 2689US12356674B2Method for fabricating a strained structure and structure formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 2789US8648400B2FinFET semiconductor device with germanium (GE) finsXU JEFF J·Filed 2011·Granted Feb 11, 2014·9 cites·16 claims
- 2888US8334570B2Metal gate stress film for mobility enhancement in FinFET deviceXU JEFF J·Filed 2011·Granted Dec 18, 2012·12 cites·20 claims
- 2987US8999794B2Self-aligned source and drain structures and method of manufacturing sameFANG ZIWEI·Filed 2011·Granted Apr 7, 2015·8 cites·22 claims
- 3087US8847333B2Techniques providing metal gate devices with multiple barrier layersYu xiong-fei·Filed 2011·Granted Sep 30, 2014·9 cites·20 claims
- 3187US8268683B2Method for reducing interfacial layer thickness for high-K and metal gate stackYAO LIANG-GI·Filed 2010·Granted Sep 18, 2012·6 cites·20 claims
- 3286US9831243B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 28, 2017·3 cites·20 claims
- 3386US8470659B2Method for reducing interfacial layer thickness for high-k and metal gate stackYAO LIANG-GI·Filed 2012·Granted Jun 25, 2013·5 cites·20 claims
- 3485US9006056B2Method for reducing interfacial layer thickness for high-k and metal gate stackTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 14, 2015·4 cites·20 claims
- 3583US10468408B2Fin-like field effect transistor (FinFET) device and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·2 cites·20 claims
- 3683US9202915B2Method of forming epi film in substrate trenchTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 1, 2015·4 cites·11 claims
- 3781US11855210B2Method for fabricating a strained structure and structure formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 3881US9911735B2Fin-like field effect transistor (FinFET) device and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 6, 2018·2 cites·17 claims
- 3981US9647118B2Device having EPI film in substrate trenchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·2 cites·20 claims
- 4081US9105624B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 11, 2015·3 cites·20 claims
- 4178US8501570B2Method of manufacturing source/drain structuresFANG ZIWEI·Filed 2010·Granted Aug 6, 2013·4 cites·25 claims
- 4277US7939353B1Methods of forming integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted May 10, 2011·4 cites·20 claims
- 4376US11251303B2Method for fabricating a strained structure and structure formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·0 cites·20 claims
- 4474US8524587B2Non-uniformity reduction in semiconductor planarizationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 3, 2013·2 cites·20 claims
- 4572US10998442B2Method for fabricating a strained structure and structure formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 4, 2021·0 cites·20 claims
- 4671US8106469B2Methods and apparatus of fluorine passivationXU JEFF J·Filed 2010·Granted Jan 31, 2012·3 cites·20 claims
- 4768US9040393B2Method of forming semiconductor structureYAO LIANG-GI·Filed 2011·Granted May 26, 2015·2 cites·17 claims
- 4867US10818661B2Fin-like field effect transistor (FinFET) device and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 27, 2020·0 cites·20 claims
- 4965US10522544B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 31, 2019·0 cites·20 claims
- 5064US10510887B2Method for fabricating a strained structure and structure formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·0 cites·20 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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