Inventor · disambiguated record
Gary H. Loechelt
Also filed as: LOECHELT GARY · LOECHELT GARY H · LOECHELT GARY HORST
70 granted patents·12 pending applications·659 citations·filing 1997–2025
99Inventor score
Files withSEMICONDUCTOR COMPONENTS IND LLC35SEMICONDUCTOR COMPONENTS IND28LOECHELT GARY H15GRIVNA GORDON M1MOTOROLA INC1
Top patents by PatentIndex Score
82 records- 0198US7253477B2Semiconductor device edge termination structureSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Aug 7, 2007·118 cites·23 claims
- 0298US7176524B2Semiconductor device having deep trench charge compensation regions and methodSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Feb 13, 2007·91 cites·20 claims
- 0397US9620585B1Termination for a stacked-gate super-junction MOSFETSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Apr 11, 2017·16 cites·10 claims
- 0496US7482220B2Semiconductor device having deep trench charge compensation regions and methodSEMICONDUCTOR COMPONENTS IND·Filed 2006·Granted Jan 27, 2009·37 cites·11 claims
- 0596US7285823B2Superjunction semiconductor device structureSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Oct 23, 2007·57 cites·18 claims
- 0696US7276747B2Semiconductor device having screening electrode and methodSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Oct 2, 2007·46 cites·16 claims
- 0795US7868379B2Electronic device including a trench and a conductive structure thereinSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Jan 11, 2011·28 cites·22 claims
- 0892US8202775B2Process of forming an electronic device including a trench and a conductive structure thereinLOECHELT GARY H·Filed 2011·Granted Jun 19, 2012·11 cites·20 claims
- 0991US7989857B2Electronic device including an insulating layer having different thicknesses and a conductive electrode and a process of forming the sameSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Aug 2, 2011·16 cites·23 claims
- 1090US9159797B2Electronic device comprising conductive structures and an insulating layer between the conductive structures and within a trenchSEMICONDUCTOR COMPONENTS IND·Filed 2013·Granted Oct 13, 2015·9 cites·20 claims
- 1190US8106436B2Semiconductor trench structure having a sealing plugGRIVNA GORDON M·Filed 2011·Granted Jan 31, 2012·10 cites·20 claims
- 1290US8076716B2Electronic device including a trench and a conductive structure thereinLOECHELT GARY H·Filed 2010·Granted Dec 13, 2011·10 cites·26 claims
- 1390US7902601B2Semiconductor device having deep trench charge compensation regions and methodSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Mar 8, 2011·13 cites·19 claims
- 1489US8519474B2Electronic device including an insulating layer having different thicknesses and a conductive electrode and a process of forming the sameLOECHELT GARY H·Filed 2011·Granted Aug 27, 2013·9 cites·19 claims
- 1589US8299560B2Electronic device including a buried insulating layer and a vertical conductive structure extending therethrough and a process of forming the sameLOECHELT GARY H·Filed 2010·Granted Oct 30, 2012·10 cites·21 claims
- 1689US7960781B2Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and methodSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Jun 14, 2011·14 cites·17 claims
- 1787US10164091B1Electronic device including a ring suppression structureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Dec 25, 2018·4 cites·19 claims
- 1887US8372716B2Method of forming a semiconductor device having vertical charge-compensated structure and sub-surface connecting layerSEMICONDUCTOR COMPONENTS IND·Filed 2011·Granted Feb 12, 2013·8 cites·18 claims
- 1986US8389369B2Electronic device including a doped region disposed under and having a higher dopant concentration than a channel region and a process of forming the sameLOECHELT GARY H·Filed 2010·Granted Mar 5, 2013·7 cites·25 claims
- 2086US7446354B2Power semiconductor device having improved performance and methodSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Nov 4, 2008·11 cites·14 claims
- 2186US7397084B2Semiconductor device having enhanced performance and methodSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Jul 8, 2008·13 cites·16 claims
- 2285US10236342B2Electronic device including a termination structureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Mar 19, 2019·4 cites·20 claims
- 2384US8298886B2Electronic device including doped regions between channel and drain regions and a process of forming the sameLOECHELT GARY H·Filed 2010·Granted Oct 30, 2012·6 cites·24 claims
- 2484US7902017B2Process of forming an electronic device including a trench and a conductive structure thereinSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Mar 8, 2011·11 cites·19 claims
- 2583US8999782B2Process of forming an electronic device including a vertical conductive structureLOECHELT GARY H·Filed 2013·Granted Apr 7, 2015·5 cites·20 claims
- 2683US7902075B2Semiconductor trench structure having a sealing plug and methodSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Mar 8, 2011·9 cites·7 claims
- 2782US9490358B2Electronic device including a vertical conductive structureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Nov 8, 2016·3 cites·20 claims
- 2880US8928050B2Electronic device including a schottky contactLOECHELT GARY H·Filed 2013·Granted Jan 6, 2015·5 cites·19 claims
- 2979US9859419B1Stacked-gate super-junction MOSFETSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Jan 2, 2018·2 cites·10 claims
- 3078US8592279B2Electronic device including a tapered trench and a conductive structure therein and a process of forming the sameLOECHELT GARY H·Filed 2011·Granted Nov 26, 2013·3 cites·5 claims
- 3177US12483233B2Method for suppressing voltage overshootsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 3277US6764918B2Structure and method of making a high performance semiconductor device having a narrow doping profileSEMICONDUCTOR COMPONENTS IND·Filed 2002·Granted Jul 20, 2004·21 cites·23 claims
- 3376US8541302B2Electronic device including a trench with a facet and a conductive structure therein and a process of forming the sameLOECHELT GARY H·Filed 2011·Granted Sep 24, 2013·3 cites·17 claims
- 3475US10153213B2Process of forming an electronic device including a drift region, a sinker region and a resurf regionSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Dec 11, 2018·3 cites·17 claims
- 3575US9070562B2Circuit including a switching element, a rectifying element, and a charge storage elementSEMICONDUCTOR COMPONENTS IND·Filed 2013·Granted Jun 30, 2015·4 cites·20 claims
- 3675USRE45365ESemiconductor device having a vertically-oriented conductive region that electrically connects a transistor structure to a substrateSEMICONDUCTOR COMPONENTS IND·Filed 2013·Granted Feb 10, 2015·2 cites·39 claims
- 3774US8222695B2Process of forming an electronic device including an integrated circuit with transistors coupled to each otherLOECHELT GARY H·Filed 2009·Granted Jul 17, 2012·4 cites·23 claims
- 3869US7732862B2Power semiconductor device having improved performance and methodSEMICONDUCTOR COMPONENTS IND·Filed 2006·Granted Jun 8, 2010·4 cites·14 claims
- 3968US8582317B2Method for manufacturing a semiconductor component and structure thereforWEN YENTING·Filed 2010·Granted Nov 12, 2013·4 cites·16 claims
- 4068US8530299B2Electronic device including a well regionLOECHELT GARY H·Filed 2012·Granted Sep 10, 2013·2 cites·16 claims
- 4166US6809396B2Integrated circuit with a high speed narrow base width vertical PNP transistorSEMICONDUCTOR COMPONENTS IND·Filed 2002·Granted Oct 26, 2004·14 cites·8 claims
- 4263US11652166B2Power device having super junction and Schottky diodeSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted May 16, 2023·0 cites·21 claims
- 4362US9966846B2Circuit including dual power converters and an inductor and a method of using an electronic device including a circuit including dual power converters and an inductorSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted May 8, 2018·1 cites·19 claims
- 4462US2025280577A1Electronic device including a power transistorSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 4559US8124468B2Process of forming an electronic device including a well regionLOECHELT GARY H·Filed 2009·Granted Feb 28, 2012·1 cites·12 claims
- 4658US11710767B2Dielectric lattice with capacitor and shield structuresSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Jul 25, 2023·0 cites·20 claims
- 4755US11728331B2Dielectric lattice with passive component circuitsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 4855US11552017B2Trench gate transistors with low-resistance shield and gate interconnectsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Jan 10, 2023·0 cites·20 claims
- 4955US10680095B2Power device having super junction and schottky diodeSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jun 9, 2020·0 cites·20 claims
- 5055US10593774B2Electronic device including a dielectric layer having a non-uniform thicknessSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Mar 17, 2020·0 cites·20 claims
Showing the top 50 of 82 patent records by PatentIndex Score.
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