Inventor · disambiguated record
Junghun Lim
Also filed as: LIM JUNGHUN
6 granted patents·3 pending applications·34 citations·filing 2011–2025
79Inventor score
Technology areasH10P
Top patents by PatentIndex Score
9 records- 0194US9368647B2Compositions for etchingSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 14, 2016·15 cites·20 claims
- 0287US8940182B2Compositions for etching and methods of forming a semiconductor device using the sameHONG YOUNG-TAEK·Filed 2012·Granted Jan 27, 2015·12 cites·16 claims
- 0377US9136120B2Compositions for etching and methods of forming a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 15, 2015·3 cites·8 claims
- 0471US11091696B2Etching composition and method for manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 17, 2021·1 cites·15 claims
- 0568US12234400B2Etchant composition for etching silicon germanium film and method of manufacturing integrated circuit device by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·13 claims
- 0666US8129322B2Photosensitive-resin remover composition and method of fabricating semiconductor device using the sameLEE AHN-HO·Filed 2011·Granted Mar 6, 2012·3 cites·3 claims
- 0761US2025163323A1Etchant composition for etching silicon germanium film and method of manufacturing integrated circuit device by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0850US2023272278A1Etching composition for etching molybdenum film and method of manufacturing integrated circuit device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 0939US2019136132A1Composition for etching, method of etching silicon nitride layer, and method for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →