Inventor · disambiguated record
Weidong Tian
Also filed as: TIAN WEIDONG
20 granted patents·4 pending applications·38 citations·filing 2002–2019
92Inventor score
Top patents by PatentIndex Score
24 records- 0193US10109574B1Structure and method for improving high voltage breakdown reliability of a microelectronic deviceTEXAS INSTRUMENTS INC·Filed 2017·Granted Oct 23, 2018·7 cites·21 claims
- 0289US9548298B1Method of improving bipolar device signal to noise performance by reducing the effect of oxide interface trapping centersTEXAS INSTRUMENTS INC·Filed 2015·Granted Jan 17, 2017·6 cites·8 claims
- 0386US9431253B1Fabrication flow based on metal gate process for making low cost flash memoryTEXAS INSTRUMENTS INC·Filed 2015·Granted Aug 30, 2016·5 cites·11 claims
- 0476US10679935B2Structure and method for improving high voltage breakdown reliability of a microelectronic deviceTEXAS INSTRUMENTS INC·Filed 2019·Granted Jun 9, 2020·1 cites·18 claims
- 0576US10418320B2Structure and method for improving high voltage breakdown reliability of a microelectronic deviceTEXAS INSTRUMENTS INC·Filed 2018·Granted Sep 17, 2019·1 cites·25 claims
- 0662US7592252B2Versatile system for charge dissipation in the formation of semiconductor device structuresTEXAS INSTRUMENTS INC·Filed 2006·Granted Sep 22, 2009·2 cites·9 claims
- 0759US8679929B2On current in one-time-programmable memory cellsPAN SHANJEN “ROBERT”·Filed 2011·Granted Mar 25, 2014·1 cites·13 claims
- 0859US8664706B2Current in one-time-programmable memory cellsPAN SHANJEN ROBERT·Filed 2012·Granted Mar 4, 2014·1 cites·6 claims
- 0959US8373215B2Zero temperature coefficient capacitorTEXAS INSTRUMENTS INC·Filed 2011·Granted Feb 12, 2013·1 cites·20 claims
- 1056US6706635B2Innovative method to build a high precision analog capacitor with low voltage coefficient and hysteresisTEXAS INSTRUMENTS INC·Filed 2002·Granted Mar 16, 2004·6 cites·33 claims
- 1153US8609501B2Fluorine implant under isolation dielectric structures to improve bipolar transistor performance and matchingTIAN WEIDONG·Filed 2012·Granted Dec 17, 2013·1 cites·20 claims
- 1252US6794700B1Capacitor having a dielectric layer including a group 17 elementTEXAS INSTRUMENTS INC·Filed 2003·Granted Sep 21, 2004·3 cites·12 claims
- 1351US10211303B2Low cost flash memory fabrication flow based on metal gate processTEXAS INSTRUMENTS INC·Filed 2016·Granted Feb 19, 2019·0 cites·20 claims
- 1451US9818740B2Method of improving bipolar device signal to noise performance by reducing the effect of oxide interface trapping centersTEXAS INSTRUMENTS INC·Filed 2016·Granted Nov 14, 2017·0 cites·18 claims
- 1551US8546222B1Electrically erasable programmable non-volatile memoryTEXAS INSTRUMENTS INC·Filed 2013·Granted Oct 1, 2013·0 cites·13 claims
- 1649US8110414B2Forming integrated circuit devices with metal-insulator-metal capacitors using selective etch of top electrodesCATHEY JR MARSHALL O·Filed 2009·Granted Feb 7, 2012·1 cites·3 claims
- 1747US7671445B2Versatile system for charge dissipation in the formation of semiconductor device structuresTEXAS INSTRUMENTS INC·Filed 2006·Granted Mar 2, 2010·0 cites·22 claims
- 1843US7045418B2Semiconductor device including a dielectric layer having a gettering material located therein and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2003·Granted May 16, 2006·2 cites·22 claims
- 1939US7498219B2Methods for reducing capacitor dielectric absorption and voltage coefficientTEXAS INSTRUMENTS INC·Filed 2003·Granted Mar 3, 2009·0 cites·30 claims
- 2039US7119444B2Versatile system for charge dissipation in the formation of semiconductor device structuresTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 10, 2006·0 cites·12 claims
- 2139US2012292682A1Electrically Erasable Programmable Non-Volatile MemoryPAN SHANJEN·Filed 2011·Application pending·0 cites
- 2238US2008277761A1On-chip isolation capacitors, circuits therefrom, and methods for forming the sameTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 2335US2008137262A1Methods and systems for capacitorsTEXAS INSTRUMENTS INC·Filed 2006·Application pending·0 cites
- 2433US2016218062A1Thin film resistor integration in copper damascene metallizationTEXAS INSTRUMENTS INC·Filed 2015·Application pending·0 cites
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