Inventor · disambiguated record
Robert Beach
Also filed as: BEACH ROBERT · BEACH ROBERT S · BEACH ROBERT STANLEY
31 granted patents·4 pending applications·334 citations·filing 1999–2020
96Inventor score
Files withHITACHI GLOBAL STORAGE TECH11HITACHI GLOBAL STORAGE TECH NL5IBM4SAMSUNG ELECTRONICS CO LTD4BEACH ROBERT2
Top patents by PatentIndex Score
35 records- 0199US8860156B2Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAMBEACH ROBERT·Filed 2012·Granted Oct 14, 2014·88 cites·13 claims
- 0298US8138561B2Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAMHORNG CHENG T·Filed 2008·Granted Mar 20, 2012·58 cites·10 claims
- 0395US10868235B2Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·4 cites·20 claims
- 0495US8609262B2Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM applicationHORNG CHENG T·Filed 2009·Granted Dec 17, 2013·33 cites·16 claims
- 0591US7630177B2Tunnel MR head with closed-edge laminated free layerHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Dec 8, 2009·13 cites·10 claims
- 0688US7564110B2Electrical lapping guides made from tunneling magnetoresistive (TMR) materialHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Jul 21, 2009·15 cites·11 claims
- 0784US7932717B2Test components fabricated with pseudo sensors used for determining the resistance of an MR sensorHITACHI GLOBAL STORAGE TECH NL·Filed 2007·Granted Apr 26, 2011·6 cites·7 claims
- 0882US8981503B2STT-MRAM reference layer having substantially reduced stray field and consisting of a single magnetic domainBEACH ROBERT·Filed 2012·Granted Mar 17, 2015·8 cites·20 claims
- 0982US6721146B2Magnetic recording GMR read back sensor and method of manufacturingIBM·Filed 2001·Granted Apr 13, 2004·14 cites·6 claims
- 1079US10193056B2Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAMHEADWAY TECH INC·Filed 2014·Granted Jan 29, 2019·2 cites·5 claims
- 1179US7852072B2Test-device system for independent characterization of sensor-width and sensor-stripe-height definition processesHITACHI GLOBAL STORAGE TECH NL·Filed 2007·Granted Dec 14, 2010·3 cites·20 claims
- 1279US6449134B1Read head with file resettable dual spin valve sensorIBM·Filed 1999·Granted Sep 10, 2002·36 cites·65 claims
- 1376US7768749B2Tunnel MR head with long stripe height stabilized through side-extended bias layerHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Aug 3, 2010·5 cites·12 claims
- 1476US7530158B2CPP read sensor fabrication using heat resistant photomaskHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted May 12, 2009·9 cites·9 claims
- 1575US6721145B2Method for initializing antiferromagnetic layers in a spin valve magnetic sensorIBM·Filed 2002·Granted Apr 13, 2004·10 cites·16 claims
- 1673US11930717B2Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 12, 2024·0 cites·20 claims
- 1773US7855553B2Test components fabricated with large area sensors used for determining the resistance of an MR sensorHITACHI GLOBAL STORAGE TECH NL·Filed 2007·Granted Dec 21, 2010·2 cites·9 claims
- 1873US7166173B2Method of simultaneously initializing two antiferromagnetic layers in a magnetic sensorHITACHI GLOBAL STORAGE TECH·Filed 2003·Granted Jan 23, 2007·14 cites·4 claims
- 1972US7150093B2Method of manufacturing magnetic recording GMR read back sensorIBM·Filed 2003·Granted Dec 19, 2006·7 cites·8 claims
- 2068US7574791B2Method to fabricate side shields for a magnetic sensorHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Aug 18, 2009·1 cites·21 claims
- 2167US7773349B2Tunnel MR head with long stripe height sensor stabilized through the shieldHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Aug 10, 2010·2 cites·11 claims
- 2264US9331271B2Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM applicationHEADWAY TECHNOLOGIES INC·Filed 2013·Granted May 3, 2016·2 cites·13 claims
- 2358US7999566B2Wafer level testingHITACHI GLOBAL STORAGE TECH NL·Filed 2007·Granted Aug 16, 2011·0 cites·12 claims
- 2458US7768268B2Verification of a ground connection fabrication process for ESD resistors in magnetic headsHITACHI GLOBAL STORAGE TECH·Filed 2007·Granted Aug 3, 2010·0 cites·12 claims
- 2556US7469466B2Method for providing a temporary, deep shunt on wafer structures for electrostatic discharge protection during processingHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Dec 30, 2008·1 cites·12 claims
- 2651US10274571B2Method and apparatus for measuring exchange stiffness at a patterned device levelSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 30, 2019·1 cites·10 claims
- 2746US2007230056A1Slider incorporating heaters and ELGs and method of fabricationBEACH ROBERT S·Filed 2006·Application pending·0 cites
- 2845US10276226B2Method and system for determining temperature using a magnetic junctionSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 30, 2019·0 cites·1 claims
- 2943US10297300B2Method and system for determining temperature using a magnetic junctionSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 21, 2019·0 cites·9 claims
- 3043US7919967B2Verification of a fabrication process used to form read elements in magnetic headsHITACHI GLOBAL STORAGE TECH NL·Filed 2007·Granted Apr 5, 2011·0 cites·5 claims
- 3143US2006231930A1Heat resistant photomask for high temperature fabrication processesHITACHI GLOBAL STORAGE TECH·Filed 2005·Application pending·0 cites
- 3239US9735350B2Method and system for removing boron from magnetic junctions usable in spin transfer torque memory applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 15, 2017·0 cites·15 claims
- 3339US7564235B2Determination of magnetic read head propertiesHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Jul 21, 2009·0 cites·24 claims
- 3438US2002006021A1Spin valve sensor with an antiferromagnetic layer between two pinned layersFiled 2001·Application pending·0 cites
- 3537US2002131215A1Tunnel junction and charge perpendicular-to-plane magnetic recording sensors and method of manufactureFiled 2001·Application pending·0 cites
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