Inventor · disambiguated record
Mark E. Twigg
Also filed as: TWIGG MARK · TWIGG MARK E
9 granted patents·1 pending application·174 citations·filing 1994–2021
89Inventor score
Top patents by PatentIndex Score
10 records- 0189US8294135B2High power density photo-electronic and photo-voltaic materials and methods of makingLEBEDEV NIKOLAI·Filed 2010·Granted Oct 23, 2012·16 cites·14 claims
- 0288US6201342B1Automatically sharp field emission cathodesUS NAVY·Filed 1997·Granted Mar 13, 2001·52 cites·13 claims
- 0384US6113451AAtomically sharp field emission cathodesUS NAVY·Filed 1999·Granted Sep 5, 2000·38 cites·8 claims
- 0475US6265089B1Electronic devices grown on off-axis sapphire substrateUS NAVY·Filed 1999·Granted Jul 24, 2001·51 cites·18 claims
- 0561US7470989B2Technique for perfecting the active regions of wide bandgap semiconductor nitride devicesUS NAVY·Filed 2006·Granted Dec 30, 2008·1 cites·18 claims
- 0651US8883538B2High power density photo-electronic and photo-voltaic materials and methods of makingLEBEDEV NIKOLAI·Filed 2012·Granted Nov 11, 2014·0 cites·11 claims
- 0746US7198970B2Technique for perfecting the active regions of wide bandgap semiconductor nitride devicesUS NAVY·Filed 2004·Granted Apr 3, 2007·1 cites·14 claims
- 0845US2021296524A1SiGeSn VIRTUAL SUBSTRATE FORMED BY MOLECULAR BEAM EPITAXY ON A Si SUBSTRATE FOR THE STRAINED GROWTH OF GeSnUS GOV SEC NAVY·Filed 2021·Application pending·0 cites
- 0939US5419785AIntrinsically doped III-A and V-A compounds having precipitates of V-A elementUS ARMY·Filed 1994·Granted May 30, 1995·9 cites·11 claims
- 1038US5525538AMethod for intrinsically doped III-A and V-A compoundsUS ARMY·Filed 1995·Granted Jun 11, 1996·6 cites·8 claims
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