Inventor · disambiguated record
Haruo Nakazawa
Also filed as: NAKAZAWA HARUO
43 granted patents·3 pending applications·133 citations·filing 2004–2020
97Inventor score
Files withFUJI ELECTRIC CO LTD24NAKAZAWA HARUO10FUJI ELECTRIC SYSTEMS CO LTD3FUJI ELEC DEVICE TECH CO LTD2NEMOTO MICHIO2
Top patents by PatentIndex Score
46 records- 0195US8084814B2Semiconductor device and method of producing the sameNEMOTO MICHIO·Filed 2009·Granted Dec 27, 2011·30 cites·8 claims
- 0294US7741192B2Semiconductor device and manufacturing method thereofFUJI ELECTRIC SYSTEMS CO LTD·Filed 2005·Granted Jun 22, 2010·23 cites·8 claims
- 0387US7776672B2Semiconductor device and manufacturing method thereofFUJI ELECTRIC SYSTEMS CO LTD·Filed 2006·Granted Aug 17, 2010·12 cites·14 claims
- 0484US8119496B2Semiconductor device and manufacturing method thereofSHIMOYAMA KAZUO·Filed 2010·Granted Feb 21, 2012·7 cites·11 claims
- 0583US10026831B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Jul 17, 2018·3 cites·9 claims
- 0681US7535059B2Semiconductor device and manufacturing method of the semiconductor deviceFUJI ELECTRIC HOLDINGS·Filed 2006·Granted May 19, 2009·8 cites·14 claims
- 0780US9659774B2Impurity introducing method, impurity introducing apparatus, and method of manufacturing semiconductor elementFUJI ELECTRIC CO LTD·Filed 2015·Granted May 23, 2017·3 cites·22 claims
- 0879US10727060B2Doping system, doping method and method for manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Jul 28, 2020·2 cites·7 claims
- 0976US9825145B2Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technologyFUJI ELECTRIC CO LTD·Filed 2016·Granted Nov 21, 2017·2 cites·15 claims
- 1076US9659775B2Method for doping impurities, method for manufacturing semiconductor deviceUNIV KYUSHU NAT UNIV CORP·Filed 2016·Granted May 23, 2017·2 cites·24 claims
- 1175US10658183B2Impurity adding apparatus, impurity adding method, and semiconductor element manufacturing methodFUJI ELECTRIC CO LTD·Filed 2016·Granted May 19, 2020·2 cites·13 claims
- 1275US9564334B2Method of manufacturing a semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Feb 7, 2017·2 cites·9 claims
- 1375US9548205B2Method of manufacturing a semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Jan 17, 2017·2 cites·9 claims
- 1473US9018633B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2013·Granted Apr 28, 2015·3 cites·18 claims
- 1572US7517777B2Method of manufacturing semiconductor device and semiconductor device formed by the methodFUJI ELEC DEVICE TECH CO LTD·Filed 2006·Granted Apr 14, 2009·4 cites·22 claims
- 1670US7135387B2Method of manufacturing semiconductor elementFUJI ELEC DEVICE TECH CO LTD·Filed 2004·Granted Nov 14, 2006·14 cites·14 claims
- 1769US8962405B2Method of manufacturing semiconductor device by mounting and positioning a semiconductor die using detection marksFUJI ELECTRIC CO LTD·Filed 2013·Granted Feb 24, 2015·2 cites·13 claims
- 1864US10068998B2Semiconductor device and method of producing the sameNEMOTO MICHIO·Filed 2011·Granted Sep 4, 2018·1 cites·10 claims
- 1964US9972499B2Method for forming metal-semiconductor alloy using hydrogen plasmaFUJI ELECTRIC CO LTD·Filed 2016·Granted May 15, 2018·1 cites·14 claims
- 2064US9431270B2Method for producing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2014·Granted Aug 30, 2016·1 cites·6 claims
- 2164US8999768B2Semiconductor device manufacturing methodNAKAZAWA HARUO·Filed 2011·Granted Apr 7, 2015·1 cites·9 claims
- 2263US9892919B2Semiconductor device manufacturing methodFUJI ELECTRIC CO LTD·Filed 2015·Granted Feb 13, 2018·1 cites·15 claims
- 2362US8420512B2Method for manufacturing semiconductor deviceNAKAZAWA HARUO·Filed 2009·Granted Apr 16, 2013·1 cites·19 claims
- 2462US8138542B2Semiconductor device and manufacturing method of the semiconductor deviceYOSHIKAWA KOH·Filed 2009·Granted Mar 20, 2012·2 cites·4 claims
- 2561US9418852B2Method of manufacturing a semiconductor deviceNAKAZAWA HARUO·Filed 2011·Granted Aug 16, 2016·1 cites·7 claims
- 2661US8809130B2Reverse block-type insulated gate bipolar transistor manufacturing methodFUJI ELECTRIC CO LTD·Filed 2013·Granted Aug 19, 2014·1 cites·8 claims
- 2759US8460975B2Reverse block-type insulated gate bipolar transistor manufacturing methodNAKAZAWA HARUO·Filed 2011·Granted Jun 11, 2013·1 cites·8 claims
- 2858US2014327041A1Semiconductor device and manufacturing method thereofFUJI ELECTRIC CO LTD·Filed 2014·Application pending·0 cites
- 2956US10205010B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Feb 12, 2019·0 cites·9 claims
- 3056US8692350B2Semiconductor device and method of manufacturing the sameNAKAZAWA HARUO·Filed 2011·Granted Apr 8, 2014·1 cites·8 claims
- 3154US10109501B2Manufacturing method of semiconductor device having a voltage resistant structureFUJI ELECTRIC CO LTD·Filed 2017·Granted Oct 23, 2018·0 cites·3 claims
- 3254US9786749B2Semiconductor device having a voltage resistant structureFUJI ELECTRIC CO LTD·Filed 2016·Granted Oct 10, 2017·0 cites·9 claims
- 3353US10453687B2Method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Oct 22, 2019·0 cites·16 claims
- 3453US8697558B2Semiconductor device and manufacturing method thereofNAKAZAWA HARUO·Filed 2009·Granted Apr 15, 2014·0 cites·7 claims
- 3550US7807554B2Method of manufacturing semiconductor elementFUJI ELECTRIC SYSTEMS CO LTD·Filed 2008·Granted Oct 5, 2010·0 cites·16 claims
- 3649US11069779B2Silicon carbide semiconductor device and method for manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2019·Granted Jul 20, 2021·0 cites·19 claims
- 3749US9905684B2Semiconductor device having schottky junction between substrate and drain electrodeFUJI ELECTRIC CO LTD·Filed 2015·Granted Feb 27, 2018·0 cites·14 claims
- 3849US2012184083A1Semiconductor device and manufacturing method thereofSHIMOYAMA KAZUO·Filed 2012·Application pending·0 cites
- 3948US8759870B2Semiconductor deviceNAKAZAWA HARUO·Filed 2010·Granted Jun 24, 2014·0 cites·2 claims
- 4046US11245010B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2020·Granted Feb 8, 2022·0 cites·8 claims
- 4146US9450070B2Method for manufacturing a silicon semiconductor substrate including a diffusion layer prior to forming a semiconductor device thereonFUJI ELECTRIC CO LTD·Filed 2014·Granted Sep 20, 2016·0 cites·22 claims
- 4245US11264240B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Mar 1, 2022·0 cites·16 claims
- 4341US8853009B2Method for manufacturing reverse-blocking semiconductor elementNAKAZAWA HARUO·Filed 2012·Granted Oct 7, 2014·0 cites·13 claims
- 4440US10115587B2Method of manufacturing semiconductor deviceNAKAZAWA HARUO·Filed 2012·Granted Oct 30, 2018·0 cites·8 claims
- 4540US2012329257A1Method for manufacturing semiconductor deviceNAKAZAWA HARUO·Filed 2012·Application pending·0 cites
- 4636US10559664B2Method of manufacturing semiconductor device by removing a bulk layer to expose an epitaxial-growth layer and by removing portions of a supporting-substrate to expose portions of the epitaxial-growth layerFUJI ELECTRIC CO LTD·Filed 2017·Granted Feb 11, 2020·0 cites·19 claims
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