Inventor · disambiguated record
Nestor A. Bojarczuk
Also filed as: BOJARCZUK JR NESTOR A · BOJARCZUK JR NESTOR ALEXANDER · BOJARCZUK NESTOR A · BOJARCZUK NESTOR A JR
42 granted patents·7 pending applications·1,106 citations·filing 1993–2017
98Inventor score
Top patents by PatentIndex Score
49 records- 0197US7105889B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectricsIBM·Filed 2004·Granted Sep 12, 2006·93 cites·26 claims
- 0295US6541079B1Engineered high dielectric constant oxide and oxynitride heterostructure gate dielectrics by an atomic beam deposition techniqueIBM·Filed 1999·Granted Apr 1, 2003·148 cites·9 claims
- 0392US7452767B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectricsIBM·Filed 2006·Granted Nov 18, 2008·15 cites·4 claims
- 0492US7446380B2Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for CMOSIBM·Filed 2005·Granted Nov 4, 2008·20 cites·15 claims
- 0592US6852575B2Method of forming lattice-matched structure on silicon and structure formed therebyIBM·Filed 2001·Granted Feb 8, 2005·43 cites·47 claims
- 0692US5898185AHybrid organic-inorganic semiconductor light emitting diodesIBM·Filed 1997·Granted Apr 27, 1999·167 cites·22 claims
- 0791US8193051B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectricsBOJARCZUK JR NESTOR A·Filed 2011·Granted Jun 5, 2012·14 cites·11 claims
- 0891US7928514B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectricsIBM·Filed 2009·Granted Apr 19, 2011·12 cites·16 claims
- 0991US6528374B2Method for forming dielectric stack without interfacial layerIBM·Filed 2001·Granted Mar 4, 2003·47 cites·20 claims
- 1090US7479683B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectricsIBM·Filed 2004·Granted Jan 20, 2009·35 cites·17 claims
- 1190US7242055B2Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxideIBM·Filed 2004·Granted Jul 10, 2007·51 cites·34 claims
- 1289US7923743B2Semiconductor structure including mixed rare earth oxide formed on siliconIBM·Filed 2009·Granted Apr 12, 2011·9 cites·7 claims
- 1389US7745278B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high K dielectricsIBM·Filed 2008·Granted Jun 29, 2010·10 cites·22 claims
- 1489US6210479B1Product and process for forming a semiconductor structure on a host substrateIBM·Filed 1999·Granted Apr 3, 2001·103 cites·6 claims
- 1584US8680393B2Thin film solar cellsBOJARCZUK NESTOR A·Filed 2012·Granted Mar 25, 2014·3 cites·19 claims
- 1683US7169674B2Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrierIBM·Filed 2005·Granted Jan 30, 2007·9 cites·20 claims
- 1782US6255671B1Metal embedded passivation layer structure for microelectronic interconnect formation, customization and repairIBM·Filed 1998·Granted Jul 3, 2001·64 cites·24 claims
- 1881US6831339B2Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming sameIBM·Filed 2001·Granted Dec 14, 2004·24 cites·10 claims
- 1981US5895932AHybrid organic-inorganic semiconductor light emitting diodesIBM·Filed 1997·Granted Apr 20, 1999·78 cites·14 claims
- 2080US7432550B2Semiconductor structure including mixed rare earth oxide formed on siliconIBM·Filed 2004·Granted Oct 7, 2008·16 cites·22 claims
- 2179US7648864B2Semiconductor structure including mixed rare earth oxide formed on siliconIBM·Filed 2008·Granted Jan 19, 2010·4 cites·10 claims
- 2279US7348226B2Method of forming lattice-matched structure on silicon and structure formed therebyIBM·Filed 2005·Granted Mar 25, 2008·5 cites·30 claims
- 2377US6891231B2Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrierIBM·Filed 2001·Granted May 10, 2005·19 cites·18 claims
- 2475US7078301B2Rare earth metal oxide memory element based on charge storage and method for manufacturing sameIBM·Filed 2004·Granted Jul 18, 2006·14 cites·19 claims
- 2575US6120909AMonolithic silicon-based nitride display deviceIBM·Filed 1998·Granted Sep 19, 2000·30 cites·9 claims
- 2671US5874147AColumn III metal nitride films as phase change media for optical recordingIBM·Filed 1997·Granted Feb 23, 1999·21 cites·44 claims
- 2770US6933566B2Method of forming lattice-matched structure on silicon and structure formed therebyIBM·Filed 2002·Granted Aug 23, 2005·10 cites·31 claims
- 2866US9939366B2Spectrometer insert for measuring temperature-dependent optical propertiesIBM·Filed 2017·Granted Apr 10, 2018·0 cites·17 claims
- 2965US8987590B2Thin film solar cellsBOJARCZUK NESTOR A·Filed 2012·Granted Mar 24, 2015·0 cites·20 claims
- 3064US9911879B2In situ nitrogen doping of co-evaporated copper-zinc-tin-sulfo-selenide by nitrogen plasmaIBM·Filed 2015·Granted Mar 6, 2018·0 cites·13 claims
- 3164US9287426B1Epitaxial growth of CZT(S,Se) on siliconIBM·Filed 2014·Granted Mar 15, 2016·1 cites·20 claims
- 3264US5612131AComposite magneto-optic memory and mediaIBM·Filed 1993·Granted Mar 18, 1997·12 cites·15 claims
- 3363US6333067B2Selective growth of ferromagnetic filmsIBM·Filed 2001·Granted Dec 25, 2001·4 cites·23 claims
- 3459US9599513B2Spectrometer insert for measuring temperature-dependent optical propertiesIBM·Filed 2016·Granted Mar 21, 2017·0 cites·5 claims
- 3559US6861728B2Dielectric stack without interfacial layerIBM·Filed 2002·Granted Mar 1, 2005·5 cites·8 claims
- 3657US9417126B2Spectrometer insert for measuring temperature-dependent optical propertiesIBM·Filed 2014·Granted Aug 16, 2016·0 cites·5 claims
- 3757US5793711AComposite magneto-optic memory and mediaIBM·Filed 1996·Granted Aug 11, 1998·11 cites·13 claims
- 3855US10304979B2In situ nitrogen doping of co-evaporated copper-zinc-tin-sulfo-selenide by nitrogen plasmaIBM·Filed 2015·Granted May 28, 2019·0 cites·20 claims
- 3953US6894338B2Rare earth metal oxide memory element based on charge storage and method for manufacturing sameIBM·Filed 2002·Granted May 17, 2005·3 cites·33 claims
- 4051US2011042759A1Switching device having a molybdenum oxynitride metal gateIBM·Filed 2009·Application pending·0 cites
- 4150US8518766B2Method of forming switching device having a molybdenum oxynitride metal gateBOJARCZUK NESTOR A·Filed 2012·Granted Aug 27, 2013·0 cites·8 claims
- 4250US2008258198A1Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for cmosIBM·Filed 2008·Application pending·0 cites
- 4349US2012097234A1Using Diffusion Barrier Layer for CuZnSn(S,Se) Thin Film Solar CellBOJARCZUK NESTOR A·Filed 2010·Application pending·0 cites
- 4449US2012100663A1Fabrication of CuZnSn(S,Se) Thin Film Solar Cell with Valve Controlled S and SeBOJARCZUK NESTOR A·Filed 2010·Application pending·0 cites
- 4549US2014001440A1Dielectric for carbon-based nano-devicesBOJARCZUK NESTOR A·Filed 2012·Application pending·0 cites
- 4648US2014113416A1Dielectric for carbon-based nano-devicesBOJARCZUK NESTOR A·Filed 2012·Application pending·0 cites
- 4746US6299991B1Selective growth of ferromagnetic films for magnetic memory, storage-based devicesIBM·Filed 1998·Granted Oct 9, 2001·6 cites·11 claims
- 4841US7488640B2Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming sameIBM·Filed 2004·Granted Feb 10, 2009·0 cites·8 claims
- 4937US2005258491A1Threshold and flatband voltage stabilization layer for field effect transistors with high permittivity gate oxidesIBM·Filed 2004·Application pending·0 cites
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