Inventor · disambiguated record
Julie Tsai
Also filed as: TSAI JULIE · TSAI JULIE A
19 granted patents·1 pending application·1,206 citations·filing 1995–2015
96Inventor score
Top patents by PatentIndex Score
20 records- 0198US6521964B1Device having spacers for improved salicide resistance on polysilicon gatesINTEL CORP·Filed 1999·Granted Feb 18, 2003·241 cites·6 claims
- 0298US6509618B2Device having thin first spacers and partially recessed thick second spacers for improved salicide resistance on polysilicon gatesINTEL CORP·Filed 2000·Granted Jan 21, 2003·239 cites·8 claims
- 0398US6506652B2Method of recessing spacers to improved salicide resistance on polysilicon gatesINTEL CORP·Filed 1999·Granted Jan 14, 2003·239 cites·9 claims
- 0495US6765273B1Device structure and method for reducing silicide encroachmentINTEL CORP·Filed 1998·Granted Jul 20, 2004·240 cites·3 claims
- 0591US6777759B1Device structure and method for reducing silicide encroachmentINTEL CORP·Filed 2000·Granted Aug 17, 2004·58 cites·5 claims
- 0681US6593633B2Method and device for improved salicide resistance on polysilicon gatesINTEL CORP·Filed 2000·Granted Jul 15, 2003·16 cites·4 claims
- 0781US5828084AHigh performance poly-SiGe thin film transistorSONY CORP·Filed 1995·Granted Oct 27, 1998·46 cites·20 claims
- 0879US6638797B2High performance poly-SiGe thin film transistor and a method of fabricating such a thin film transistorSONY CORP·Filed 2002·Granted Oct 28, 2003·23 cites·13 claims
- 0978US6777760B1Device with recessed thin and thick spacers for improved salicide resistance on polysilicon gatesINTEL CORP·Filed 2000·Granted Aug 17, 2004·13 cites·12 claims
- 1076US6518155B1Device structure and method for reducing silicide encroachmentINTEL CORP·Filed 1997·Granted Feb 11, 2003·43 cites·7 claims
- 1174US9594913B2System, method, and non-transitory computer-readable storage media for analyzing software application modules and provide actionable intelligence on remediation effortsWAL MART STORES INC·Filed 2015·Granted Mar 14, 2017·3 cites·21 claims
- 1271US6188117B1Method and device for improved salicide resistance on polysilicon gatesINTEL CORP·Filed 1999·Granted Feb 13, 2001·16 cites·28 claims
- 1355US6235598B1Method of using thick first spacers to improve salicide resistance on polysilicon gatesINTEL CORP·Filed 1998·Granted May 22, 2001·8 cites·10 claims
- 1447US7211872B2Device having recessed spacers for improved salicide resistance on polysilicon gatesINTEL CORP·Filed 2000·Granted May 1, 2007·1 cites·11 claims
- 1547US6444509B1High performance poly-si1−xgex thin film transistor and a method of fabricating such a thin film transistorSONY CORP·Filed 1997·Granted Sep 3, 2002·9 cites·13 claims
- 1646US7510927B2LOCOS isolation for fully-depleted SOI devicesINTEL CORP·Filed 2002·Granted Mar 31, 2009·3 cites·4 claims
- 1739US2002053711A1Device structure and method for reducing silicide encroachmentFiled 2001·Application pending·0 cites
- 1838US6251762B1Method and device for improved salicide resistance on polysilicon gatesINTEL CORP·Filed 1999·Granted Jun 26, 2001·5 cites·11 claims
- 1937US6271096B1Method and device for improved salicide resistance on polysilicon gatesINTEL CORP·Filed 1999·Granted Aug 7, 2001·2 cites·35 claims
- 2034US6268254B1Method and device for improved salicide resistance on polysilicon gatesINTEL CORP·Filed 1999·Granted Jul 31, 2001·1 cites·15 claims
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