Inventor · disambiguated record
Michael O'Loughlin
Also filed as: O'LOUGHLIN MICHAEL · O'LOUGHLIN MICHAEL J · O'LOUGHLIN MICHAEL JOHN · OLOUGHLIN MICHAEL JOHN
17 granted patents·2 pending applications·927 citations·filing 1990–2020
94Inventor score
Files withCREE INC7EMERSON DAVID TODD2OLOUGHLIN MICHAEL JOHN2SUMAKERIS JOSEPH JOHN2TEXAS INSTRUMENTS INC2
Top patents by PatentIndex Score
19 records- 0198US8052794B2Directed reagents to improve material uniformityCREE INC·Filed 2005·Granted Nov 8, 2011·366 cites·32 claims
- 0298US6958497B2Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structuresCREE INC·Filed 2002·Granted Oct 25, 2005·290 cites·52 claims
- 0397US7312474B2Group III nitride based superlattice structuresCREE INC·Filed 2004·Granted Dec 25, 2007·153 cites·21 claims
- 0491US8430960B2Deposition systems and susceptor assemblies for depositing a film on a substrateSUMAKERIS JOSEPH JOHN·Filed 2006·Granted Apr 30, 2013·14 cites·40 claims
- 0588US7230274B2Reduction of carrot defects in silicon carbide epitaxyCREE INC·Filed 2004·Granted Jun 12, 2007·35 cites·9 claims
- 0686US8227268B2Methods of fabricating group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structuresEMERSON DAVID TODD·Filed 2007·Granted Jul 24, 2012·7 cites·31 claims
- 0786US7118781B1Methods for controlling formation of deposits in a deposition system and deposition methods including the sameCREE INC·Filed 2003·Granted Oct 10, 2006·26 cites·40 claims
- 0883US9112083B2Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structuresEMERSON DAVID TODD·Filed 2012·Granted Aug 18, 2015·3 cites·21 claims
- 0981US7196917B2PFC pre-regulator frequency dithering circuitTEXAS INSTRUMENTS INC·Filed 2005·Granted Mar 27, 2007·11 cites·6 claims
- 1074US8536582B2Stable power devices on low-angle off-cut silicon carbide crystalsZHANG QINGCHUN·Filed 2009·Granted Sep 17, 2013·4 cites·11 claims
- 1167US9349797B2SiC devices with high blocking voltage terminated by a negative bevelCHENG LIN·Filed 2012·Granted May 24, 2016·2 cites·31 claims
- 1263US10577720B2Stabilized, high-doped silicon carbideCREE INC·Filed 2017·Granted Mar 3, 2020·0 cites·4 claims
- 1359US2012052660A1Directed reagents to improve material uniformitySUMAKERIS JOSEPH JOHN·Filed 2011·Application pending·0 cites
- 1458US11371163B2Stabilized, high-doped silicon carbideWOLFSPEED INC·Filed 2020·Granted Jun 28, 2022·0 cites·15 claims
- 1558US9903046B2Reduction of carrot defects in silicon carbide epitaxyOLOUGHLIN MICHAEL JOHN·Filed 2007·Granted Feb 27, 2018·1 cites·20 claims
- 1649US7999524B2Interleaved power factor correction pre-regulator phase management circuitryTEXAS INSTRUMENTS INC·Filed 2008·Granted Aug 16, 2011·2 cites·16 claims
- 1744US5028968ARadiation hard GaAs high electron mobility transistorAEROSPACE CORP·Filed 1990·Granted Jul 2, 1991·13 cites·4 claims
- 1841US2014054609A1Large high-quality epitaxial wafersCREE INC·Filed 2013·Application pending·0 cites
- 1940US10541306B2Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor deviceOLOUGHLIN MICHAEL JOHN·Filed 2012·Granted Jan 21, 2020·0 cites·31 claims
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