Inventor · disambiguated record
Wen-Chu Hsiao
Also filed as: HSIAO WEN-CHU
23 granted patents·2 pending applications·73 citations·filing 2003–2025
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD19HSIAO WEN CHU2TAIWAN SEMICONDUCTOR MFG2CHONG LAI WAN1UNIV NAT CENTRAL1
Top patents by PatentIndex Score
25 records- 0197US10868181B2Semiconductor structure with blocking layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·21 cites·20 claims
- 0293US10297690B2Method of forming a contact structure for a FinFET semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 21, 2019·10 cites·20 claims
- 0391US9543387B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 10, 2017·13 cites·20 claims
- 0490US10269648B1Method of fabricating a semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·7 cites·20 claims
- 0585US11527442B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·1 cites·20 claims
- 0685US11309418B2Contact structure for FinFET semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 19, 2022·3 cites·20 claims
- 0783US11011623B2Method for increasing germanium concentration of FIN and resulting semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 18, 2021·2 cites·20 claims
- 0882US12237404B2Methods for increasing germanium concentration of surfaces of a silicon germanium portion of a Fin and resulting semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
- 0982US11088028B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·2 cites·20 claims
- 1082US8735255B2Method of manufacturing semiconductor deviceHSIAO WEN CHU·Filed 2012·Granted May 27, 2014·6 cites·20 claims
- 1181US2025287636A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1275US9064892B2Semiconductor devices utilizing partially doped stressor film portions and methods for forming the sameHSIAO WEN CHU·Filed 2011·Granted Jun 23, 2015·4 cites·16 claims
- 1374US12349392B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 1472US11721745B2Methods for increasing germanium concentration of surfaces of a silicon germanium portion of a fin and resulting semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 1572US2023113464A1Semiconductor structure with blocking layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1669US10727131B2Source and drain epitaxy re-shapingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 28, 2020·1 cites·22 claims
- 1768US11532749B2Semiconductor structure with blocking layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 1865US12278146B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 15, 2025·0 cites·20 claims
- 1964US9634119B2Semiconductor devices utilizing partially doped stressor film portionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 25, 2017·1 cites·20 claims
- 2058US9214393B2Surface tension modification using silane with hydrophobic functional group for thin film depositionCHONG LAI WAN·Filed 2012·Granted Dec 15, 2015·1 cites·20 claims
- 2155US9735271B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 15, 2017·0 cites·20 claims
- 2255US9324863B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 26, 2016·0 cites·19 claims
- 2351US9698263B2Surface tension modification using silane with hydrophobic functional group for thin film depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 4, 2017·0 cites·18 claims
- 2446US6852643B1Method for using ammonium fluoride solution in a photoelectrochemical etching process of a silicon waferUNIV NAT CENTRAL·Filed 2003·Granted Feb 8, 2005·1 cites·7 claims
- 2544US8927406B2Dual damascene metal gateTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 6, 2015·0 cites·20 claims
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