Inventor · disambiguated record
Mami Nishimura
Also filed as: NISHIMURA MAMI
7 granted patents·3 pending applications·20 citations·filing 2010–2018
79Inventor score
Top patents by PatentIndex Score
10 records- 0189US8641930B2In—Ga—Zn type oxide sputtering targetYANO KOKI·Filed 2010·Granted Feb 4, 2014·9 cites·20 claims
- 0275US11462399B2Sputtering target, oxide semiconductor thin film, and method for producing oxide semiconductor thin filmIDEMITSU KOSAN CO·Filed 2018·Granted Oct 4, 2022·2 cites·12 claims
- 0375US10196733B2Sputtering targetIDEMITSU KOSAN CO·Filed 2013·Granted Feb 5, 2019·3 cites·16 claims
- 0470US9206502B2In—Ga—Zn oxide sputtering target and method for producing sameSUNAGAWA MISA·Filed 2012·Granted Dec 8, 2015·3 cites·8 claims
- 0565US9214519B2In2O3—SnO2—ZnO sputtering targetITOSE MASAYUKI·Filed 2012·Granted Dec 15, 2015·2 cites·8 claims
- 0660US9054196B2Sputtering target comprising an oxide sintered body comprising In, Ga, and ZnITOSE MASAYUKI·Filed 2012·Granted Jun 9, 2015·1 cites·7 claims
- 0745US2015311071A1Sputtering target, oxide semiconductor thin film, and method for producing oxide semiconductor thin filmIDEMITSU KOSAN CO·Filed 2013·Application pending·0 cites
- 0843US8999208B2In-Ga-Sn oxide sinter, target, oxide semiconductor film, and semiconductor elementITOSE MASAYUKI·Filed 2011·Granted Apr 7, 2015·0 cites·10 claims
- 0937US2013264565A1Semiconductor thin film, thin film transistor and production method thereforNISHIMURA MAMI·Filed 2011·Application pending·0 cites
- 1036US2014102892A1In2o3-zno sputtering targetITOSE MASAYUKI·Filed 2012·Application pending·0 cites
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