Inventor · disambiguated record
Masayuki Itose
Also filed as: ITOSE MASAYUKI
9 granted patents·4 pending applications·36 citations·filing 2010–2012
85Inventor score
Top patents by PatentIndex Score
13 records- 0190US8598578B2Sputtering target and thin film transistor equipped with sameYANO KOKI·Filed 2010·Granted Dec 3, 2013·11 cites·9 claims
- 0289US8641930B2In—Ga—Zn type oxide sputtering targetYANO KOKI·Filed 2010·Granted Feb 4, 2014·9 cites·20 claims
- 0383US8858844B2In—Ga—Zn—O type sputtering targetYANO KOKI·Filed 2010·Granted Oct 14, 2014·6 cites·20 claims
- 0470US9206502B2In—Ga—Zn oxide sputtering target and method for producing sameSUNAGAWA MISA·Filed 2012·Granted Dec 8, 2015·3 cites·8 claims
- 0569US8784699B2In-Ga-Zn-type oxide, oxide sintered body, and sputtering targetYANO KOKI·Filed 2010·Granted Jul 22, 2014·2 cites·11 claims
- 0665US9214519B2In2O3—SnO2—ZnO sputtering targetITOSE MASAYUKI·Filed 2012·Granted Dec 15, 2015·2 cites·8 claims
- 0764US9243318B2Sintered material, and process for producing sameTOMAI SHIGEKAZU·Filed 2012·Granted Jan 26, 2016·2 cites·6 claims
- 0860US9054196B2Sputtering target comprising an oxide sintered body comprising In, Ga, and ZnITOSE MASAYUKI·Filed 2012·Granted Jun 9, 2015·1 cites·7 claims
- 0943US8999208B2In-Ga-Sn oxide sinter, target, oxide semiconductor film, and semiconductor elementITOSE MASAYUKI·Filed 2011·Granted Apr 7, 2015·0 cites·10 claims
- 1037US2013264565A1Semiconductor thin film, thin film transistor and production method thereforNISHIMURA MAMI·Filed 2011·Application pending·0 cites
- 1137US2012184066A1SINTERED In-Ga-Zn-O-TYPE OXIDEYANO KOKI·Filed 2010·Application pending·0 cites
- 1236US2014102892A1In2o3-zno sputtering targetITOSE MASAYUKI·Filed 2012·Application pending·0 cites
- 1335US2012228133A1In-ga-zn-o-based oxide sintered body sputtering target with excellent stability during long-term depositionITOSE MASAYUKI·Filed 2010·Application pending·0 cites
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