Inventor · disambiguated record
Kwan-Woo Do
Also filed as: DO KWAN-WOO
18 granted patents·9 pending applications·53 citations·filing 2007–2024
91Inventor score
Top patents by PatentIndex Score
27 records- 0188US8134195B2Semiconductor device and method of fabricating the sameLEE KEE-JEUNG·Filed 2008·Granted Mar 13, 2012·14 cites·36 claims
- 0285US8372746B2Electrode of semiconductor device and method for fabricating capacitorHYNIX SEMICONDUCTOR INC·Filed 2010·Granted Feb 12, 2013·8 cites·18 claims
- 0380US9224785B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Dec 29, 2015·5 cites·20 claims
- 0478US8017491B2Method for fabricating capacitorHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Sep 13, 2011·7 cites·32 claims
- 0576US2025081482A1Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2024·Application pending·0 cites
- 0675US8288274B2Method of forming noble metal layer using ozone reaction gasKIL DEOK-SIN·Filed 2008·Granted Oct 16, 2012·5 cites·7 claims
- 0770US12218182B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2021·Granted Feb 4, 2025·0 cites·16 claims
- 0870US9431402B2Semiconductor device having buried bit line and method for fabricating the sameJI YUN-HYUCK·Filed 2012·Granted Aug 30, 2016·3 cites·14 claims
- 0969US7910428B2Capacitor with pillar type storage node and method for fabricating the same including conductive capping layerHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Mar 22, 2011·3 cites·12 claims
- 1068US8441100B2Capacitor with pillar type storage node and method for fabricating the sameLEE KEE-JEUNG·Filed 2011·Granted May 14, 2013·2 cites·13 claims
- 1166US8319296B2Semiconductor device including carbon-containing electrode and method for fabricating the sameDO KWAN-WOO·Filed 2009·Granted Nov 27, 2012·3 cites·31 claims
- 1262US8148231B2Method of fabricating capacitorDO KWAN-WOO·Filed 2008·Granted Apr 3, 2012·1 cites·12 claims
- 1362US8035193B2Method of fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Oct 11, 2011·2 cites·14 claims
- 1457US2025169154A1Semiconductor device and method for manufacturing the sameSK HYNIX INC·Filed 2024·Application pending·0 cites
- 1552US2014269039A1Electronic device and variable resistance elementSK HYNIX INC·Filed 2014·Application pending·0 cites
- 1650US7816202B2Method for fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Oct 19, 2010·0 cites·27 claims
- 1748US2013022744A1Method of forming noble metal layer using ozone reaction gasHYNIX SEMICONDUCTOR INC·Filed 2012·Application pending·0 cites
- 1847US2012147519A1Electrode in semiconductor device, capacitor and method of fabricating the sameDO KWAN-WOO·Filed 2012·Application pending·0 cites
- 1945US9614008B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2015·Granted Apr 4, 2017·0 cites·16 claims
- 2044US9619392B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2015·Granted Apr 11, 2017·0 cites·9 claims
- 2144US2009273882A1Capacitor and method for fabricating the samePARK KYUNG-WOONG·Filed 2009·Application pending·0 cites
- 2243US2009002917A1Capacitor in semiconductor device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 2342US8962437B2Method for fabricating capacitor with high aspect ratioKIM BEOM-YONG·Filed 2012·Granted Feb 24, 2015·0 cites·6 claims
- 2441US8298909B2Semiconductor device and method for fabricating the sameDO KWAN-WOO·Filed 2007·Granted Oct 30, 2012·0 cites·24 claims
- 2540US9847297B2Electronic device and method for fabricating the sameSK HYNIX INC·Filed 2015·Granted Dec 19, 2017·0 cites·15 claims
- 2638US2013171797A1Method for forming multi-component layer, method for forming multi-component dielectric layer and method for fabricating semiconductor devicePARK KYUNG-WOONG·Filed 2012·Application pending·0 cites
- 2734US2012273921A1Semiconductor device and method for fabricating the sameDO KWAN-WOO·Filed 2011·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →