Inventor · disambiguated record
Chanh Nguyen
Also filed as: NGUYEN CHANH · NGUYEN CHANH N · NGUYEN CHANH N M · NGUYEN CHANH NGOC MINH
17 granted patents·2 pending applications·342 citations·filing 1994–2009
95Inventor score
Files withHRL LAB LLC6FLEXTRONICS INT USA INC4HUGHES ELECTRONICS CORP4HUGHES AIRCRAFT CO2BRAR BERINDER P S1
Top patents by PatentIndex Score
19 records- 0196US7655963B2Semiconductor device including a lateral field-effect transistor and Schottky diodeFLEXTRONICS INT USA INC·Filed 2007·Granted Feb 2, 2010·36 cites·20 claims
- 0292US7504673B2Semiconductor device including a lateral field-effect transistor and Schottky diodeFLEXTRONICS INT USA INC·Filed 2007·Granted Mar 17, 2009·16 cites·20 claims
- 0391US6100548AModulation-doped field-effect transistors and fabrication processesHUGHES ELECTRONICS CORP·Filed 1998·Granted Aug 8, 2000·108 cites·8 claims
- 0487US7675090B2Semiconductor device having a contact on a buffer layer thereof and method of forming the sameFLEXTRONICS INT USA INC·Filed 2007·Granted Mar 9, 2010·11 cites·20 claims
- 0587US7564074B2Semiconductor device including a lateral field-effect transistor and Schottky diodeFLEXTRONICS INT USA INC·Filed 2007·Granted Jul 21, 2009·14 cites·20 claims
- 0675US5766695AMethod for reducing surface layer defects in semiconductor materials having a volatile speciesHUGHES ELECTRONICS CORP·Filed 1996·Granted Jun 16, 1998·46 cites·25 claims
- 0774US7989842B2Method and apparatus for heterojunction barrier diode detector for ultrahigh sensitivityTELEDYNE SCIENT & IMAGING LLC·Filed 2009·Granted Aug 2, 2011·3 cites·22 claims
- 0874US6897137B2Process for fabricating ultra-low contact resistances in GaN-based devicesHRL LAB LLC·Filed 2003·Granted May 24, 2005·16 cites·16 claims
- 0966US7700969B1Type II interband heterostructure backward diodesHRL LAB LLC·Filed 2007·Granted Apr 20, 2010·3 cites·10 claims
- 1066US6635907B1Type II interband heterostructure backward diodesHRL LAB LLC·Filed 1999·Granted Oct 21, 2003·25 cites·17 claims
- 1156US7170105B1Type II interband heterostructure backward diodesHRL LAB LLC·Filed 2004·Granted Jan 30, 2007·7 cites·13 claims
- 1254US5856217AModulation-doped field-effect transistors and fabrication processesHUGHES ELECTRONICS CORP·Filed 1997·Granted Jan 5, 1999·17 cites·11 claims
- 1348US6673265B1Antimony-based heterostructure varactor diode with bandgap engineered quantum well electrodesHRL LAB LLC·Filed 2000·Granted Jan 6, 2004·4 cites·11 claims
- 1446US5606195AHigh-voltage bipolar transistor utilizing field-terminated bond-pad electrodesHUGHES AIRCRAFT CO·Filed 1995·Granted Feb 25, 1997·14 cites·10 claims
- 1544US6855948B2Low base-emitter voltage heterojunction bipolar transistorHRL LAB LLC·Filed 2002·Granted Feb 15, 2005·2 cites·58 claims
- 1643US5612551AAlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applicationsHUGHES AIRCRAFT CO·Filed 1996·Granted Mar 18, 1997·9 cites·8 claims
- 1743US2007145417A1High voltage semiconductor device having a lateral channel and enhanced gate-to-drain separationBRAR BERINDER P S·Filed 2007·Application pending·0 cites
- 1839US5753545AEffective constant doping in a graded compositional alloyHUGHES ELECTRONICS CORP·Filed 1994·Granted May 19, 1998·11 cites·24 claims
- 1930US2004021152A1Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gateFiled 2002·Application pending·0 cites
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