Inventor · disambiguated record
Yasunori Bito
Also filed as: BITO YASUNORI
10 granted patents·4 pending applications·65 citations·filing 1998–2011
88Inventor score
Technology areasH10D
Top patents by PatentIndex Score
14 records- 0181US7456444B2Field effect transistorNEC ELECTRONICS CORP·Filed 2006·Granted Nov 25, 2008·10 cites·20 claims
- 0272US8253218B2Protective element and semiconductor deviceBITO YASUNORI·Filed 2011·Granted Aug 28, 2012·4 cites·8 claims
- 0367US8587027B2Field effect transistor, method of manufacturing the same, and semiconductor deviceBITO YASUNORI·Filed 2009·Granted Nov 19, 2013·4 cites·18 claims
- 0466US6025613ASemiconductor device capable of reducing leak current and having excellent pinch-off characteristic and method of manufacturing the sameNEC CORP·Filed 1998·Granted Feb 15, 2000·25 cites·3 claims
- 0564US8067788B2Semiconductor deviceBITO YASUNORI·Filed 2008·Granted Nov 29, 2011·3 cites·15 claims
- 0663US8299499B2Field effect transistorAOIKE MASAYUKI·Filed 2009·Granted Oct 30, 2012·4 cites·12 claims
- 0760US8421120B2Field effect transistor capable of reducing shift of threshold voltageBITO YASUNORI·Filed 2007·Granted Apr 16, 2013·2 cites·4 claims
- 0858US6624440B2Field effect transistorNEC CORP·Filed 2001·Granted Sep 23, 2003·7 cites·11 claims
- 0952US8217424B2Semiconductor device having stacked InGaP and GaAs layers, and method of making sameYOSHINAGA YASUYUKI·Filed 2009·Granted Jul 10, 2012·2 cites·18 claims
- 1048US7071499B2Heterojunction field effect type semiconductor device having high gate turn-on voltage and low on-resistance and its manufacturing methodNEC ELECTRONICS CORP·Filed 2003·Granted Jul 4, 2006·4 cites·16 claims
- 1135US2012126288A1Semiconductor device and method of manufacturing the sameBITO YASUNORI·Filed 2011·Application pending·0 cites
- 1234US2011316050A1Semiconductor device having a heterojunction biopolar transistor and a field effect transistorBITO YASUNORI·Filed 2011·Application pending·0 cites
- 1332US2001005016A1Field effect transistorFiled 2000·Application pending·0 cites
- 1428US2002074563A1Field effect transistorFiled 1999·Application pending·0 cites
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