Inventor · disambiguated record
Kuo-Su Huang
Also filed as: HUANG KUO-SU
7 granted patents·173 citations·filing 1999–2002
87Inventor score
Files withTAIWAN SEMICONDUCTOR MFG7
Top patents by PatentIndex Score
7 records- 0188US6475870B1P-type LDMOS device with buried layer to solve punch-through problems and process for its manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Nov 5, 2002·43 cites·11 claims
- 0280US6486034B1Method of forming LDMOS device with double N-layeringTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Nov 26, 2002·25 cites·11 claims
- 0376US6770951B2P-type LDMOS device with buried layer to solve punch-through problems and process for its manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 3, 2004·19 cites·11 claims
- 0475US6682659B1Method for forming corrosion inhibited conductor layerTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 27, 2004·57 cites·16 claims
- 0573US6580131B2LDMOS device with double N-layering and process for its manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 17, 2003·16 cites·11 claims
- 0666US6348371B1Method of forming self-aligned twin wellsTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Feb 19, 2002·13 cites·19 claims
- 0735US6770138B2Pattern for monitoring epitaxial layer washoutTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 3, 2004·0 cites·20 claims
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