Inventor · disambiguated record
Philip L. Trouilloud
Also filed as: TROUILLOUD PHILIP · TROUILLOUD PHILIP L · TROUILLOUD PHILIP LOUIS
52 granted patents·7 pending applications·1,524 citations·filing 1993–2017
98Inventor score
Files withIBM47HU GUOHAN2INFINEON TECHNOLOGIES CORP2INGVARSSON SNORRI THORGEIR2KLOSTERMANN ULRICH KARL2
Top patents by PatentIndex Score
59 records- 0199US6385082B1Thermally-assisted magnetic random access memory (MRAM)IBM·Filed 2000·Granted May 7, 2002·335 cites·11 claims
- 0298US6072718AMagnetic memory devices having multiple magnetic tunnel junctions thereinIBM·Filed 1998·Granted Jun 6, 2000·268 cites·34 claims
- 0397US6104633AIntentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devicesIBM·Filed 1998·Granted Aug 15, 2000·157 cites·23 claims
- 0496US9495627B1Magnetic tunnel junction based chip identificationIBM·Filed 2015·Granted Nov 15, 2016·14 cites·4 claims
- 0596US6452764B1Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devicesIBM·Filed 2000·Granted Sep 17, 2002·76 cites·33 claims
- 0695US6724674B2Memory storage device with heating elementIBM·Filed 2002·Granted Apr 20, 2004·64 cites·20 claims
- 0795US5792569AMagnetic devices and sensors based on perovskite manganese oxide materialsIBM·Filed 1996·Granted Aug 11, 1998·156 cites·17 claims
- 0894US6538919B1Magnetic tunnel junctions using ferrimagnetic materialsIBM·Filed 2000·Granted Mar 25, 2003·74 cites·20 claims
- 0993US5946228ALimiting magnetic writing fields to a preferred portion of a changeable magnetic region in magnetic devicesIBM·Filed 1998·Granted Aug 31, 1999·98 cites·31 claims
- 1092US8835889B1Parallel shunt paths in thermally assisted magnetic memory cellsIBM·Filed 2013·Granted Sep 16, 2014·10 cites·14 claims
- 1190US6368878B1Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devicesIBM·Filed 2000·Granted Apr 9, 2002·46 cites·12 claims
- 1288US8866207B2Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memoryHU GUOHAN·Filed 2012·Granted Oct 21, 2014·10 cites·25 claims
- 1386US6590750B2Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devicesIBM·Filed 1998·Granted Jul 8, 2003·55 cites·34 claims
- 1482US7453747B2Active compensation for operating point drift in MRAM write operationIBM·Filed 2007·Granted Nov 18, 2008·11 cites·6 claims
- 1581US8102174B2Techniques for electrically characterizing tunnel junction film stacks with little or no processingWORLEDGE DANIEL CHRISTOPHER·Filed 2009·Granted Jan 24, 2012·7 cites·19 claims
- 1680US6927569B2Techniques for electrically characterizing tunnel junction film stacks with little or no processingINFINEON TECHNOLOGIES AG·Filed 2002·Granted Aug 9, 2005·28 cites·19 claims
- 1777US6667897B1Magnetic tunnel junction containing a ferrimagnetic layer and anti-parallel layerIBM·Filed 2002·Granted Dec 23, 2003·23 cites·22 claims
- 1875US9917247B2Structure for thermally assisted MRAMIBM·Filed 2016·Granted Mar 13, 2018·3 cites·20 claims
- 1975US7768809B2Wall nucleation propagation for racetrack memoryIBM·Filed 2008·Granted Aug 3, 2010·9 cites·15 claims
- 2075US7133309B2Method and structure for generating offset fields for use in MRAM devicesIBM·Filed 2005·Granted Nov 7, 2006·8 cites·26 claims
- 2173US9569712B1Magnetic tunnel junction based chip identificationIBM·Filed 2016·Granted Feb 14, 2017·1 cites·19 claims
- 2272US8105445B2Method and apparatus for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacksKLOSTERMANN ULRICH KARL·Filed 2008·Granted Jan 31, 2012·3 cites·26 claims
- 2366US7782660B2Magnetically de-coupling magnetic memory cells and bit/word lines for reducing bit selection errorsIBM·Filed 2008·Granted Aug 24, 2010·5 cites·19 claims
- 2465US9214625B2Thermally assisted MRAM with increased breakdown voltage using a double tunnel barrierIBM·Filed 2014·Granted Dec 15, 2015·1 cites·20 claims
- 2564US7330371B2Method and structure for generating offset fields for use in MRAM devicesIBM·Filed 2006·Granted Feb 12, 2008·4 cites·21 claims
- 2662US6958929B2Sensor compensation for environmental variations for magnetic random access memoryIBM·Filed 2003·Granted Oct 25, 2005·11 cites·22 claims
- 2762US6623158B2Method and apparatus for thermal proximity imaging using pulsed energyIBM·Filed 2001·Granted Sep 23, 2003·4 cites·31 claims
- 2860US9576634B1Magnetic tunnel junction based chip identificationIBM·Filed 2016·Granted Feb 21, 2017·0 cites·19 claims
- 2960US9406870B2Multibit self-reference thermally assisted MRAMIBM·Filed 2014·Granted Aug 2, 2016·0 cites·5 claims
- 3057US5392169AElectrical means to diminish read-back signal waveform distortion in recording headsIBM·Filed 1993·Granted Feb 21, 1995·11 cites·45 claims
- 3155US8470092B2Method and apparatus for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacksKLOSTERMANN ULRICH KARL·Filed 2008·Granted Jun 25, 2013·0 cites·17 claims
- 3255US7102916B2Method and structure for selecting anisotropy axis angle of MRAM device for reduced power consumptionIBM·Filed 2004·Granted Sep 5, 2006·8 cites·22 claims
- 3355US2013005052A1Magnetic tunnel junction with iron dusting layer between free layer and tunnel barrierIBM·Filed 2012·Application pending·0 cites
- 3454US9786837B2Multibit self-reference thermally assisted MRAMIBM·Filed 2015·Granted Oct 10, 2017·0 cites·16 claims
- 3554US9786836B2Multibit self-reference thermally assisted MRAMIBM·Filed 2015·Granted Oct 10, 2017·0 cites·10 claims
- 3654US8324009B2Magnetic materials having superparamagnetic particlesINGVARSSON SNORRI THORGEIR·Filed 2010·Granted Dec 4, 2012·1 cites·7 claims
- 3754US2009207653A1Memory storage device with heating elementABRAHAM DAVID W·Filed 2008·Application pending·0 cites
- 3853US8901685B2Magnetic materials having superparamagnetic particlesINGVARSSON SNORRI THORGEIR·Filed 2007·Granted Dec 2, 2014·2 cites·28 claims
- 3953US8871531B2Parallel shunt paths in thermally assisted magnetic memory cellsINTERNAT MACHINES CORP·Filed 2013·Granted Oct 28, 2014·0 cites·6 claims
- 4052US7473656B2Method for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacksIBM·Filed 2003·Granted Jan 6, 2009·2 cites·1 claims
- 4151US7061787B2Field ramp down for pinned synthetic antiferromagnetINFINEON TECHNOLOGIES CORP·Filed 2004·Granted Jun 13, 2006·6 cites·20 claims
- 4251US2012241878A1Magnetic tunnel junction with iron dusting layer between free layer and tunnel barrierHU GUOHAN·Filed 2011·Application pending·0 cites
- 4350US10236438B2Multibit self-reference thermally assisted MRAMIBM·Filed 2017·Granted Mar 19, 2019·0 cites·18 claims
- 4450US9705500B2Magnetic tunnel junction based chip identificationIBM·Filed 2016·Granted Jul 11, 2017·0 cites·12 claims
- 4550US7622784B2MRAM device with improved stack structure and offset field for low-power toggle mode writingIBM·Filed 2005·Granted Nov 24, 2009·2 cites·14 claims
- 4650US7477567B2Memory storage device with heating elementIBM·Filed 2003·Granted Jan 13, 2009·1 cites·37 claims
- 4749US8004278B2Techniques for electrically characterizing tunnel junction film stacks with little or no processingIBM·Filed 2009·Granted Aug 23, 2011·0 cites·3 claims
- 4848US7286421B2Active compensation for operating point drift in MRAM write operationIBM·Filed 2003·Granted Oct 23, 2007·4 cites·16 claims
- 4947US9515251B2Structure for thermally assisted MRAMIBM·Filed 2014·Granted Dec 6, 2016·0 cites·16 claims
- 5047US8027185B2Techniques for electrically characterizing tunnel junction film stacks with little or no processingIBM·Filed 2009·Granted Sep 27, 2011·1 cites·5 claims
Showing the top 50 of 59 patent records by PatentIndex Score.
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