Inventor · disambiguated record
George R. Goth
Also filed as: GOTH GEORGE R
21 granted patents·1 pending application·956 citations·filing 1978–2004
97Inventor score
Top patents by PatentIndex Score
22 records- 0198US4508579ALateral device structures using self-aligned fabrication techniquesIBM·Filed 1981·Granted Apr 2, 1985·273 cites·9 claims
- 0290US4589193AMetal silicide channel stoppers for integrated circuits and method for making the sameIBM·Filed 1984·Granted May 20, 1986·85 cites·12 claims
- 0389US4549927AMethod of selectively exposing the sidewalls of a trench and its use to the forming of a metal silicide substrate contact for dielectric filled deep trench isolated devicesIBM·Filed 1984·Granted Oct 29, 1985·78 cites·23 claims
- 0485US4704368AMethod of making trench-incorporated monolithic semiconductor capacitor and high density dynamic memory cells including the capacitorIBM·Filed 1985·Granted Nov 3, 1987·72 cites·9 claims
- 0579US4534826ATrench etch process for dielectric isolationIBM·Filed 1983·Granted Aug 13, 1985·51 cites·7 claims
- 0678US4400865ASelf-aligned metal process for integrated circuit metallizationIBM·Filed 1980·Granted Aug 30, 1983·46 cites·43 claims
- 0773US4719185AMethod of making shallow junction complementary vertical bipolar transistor pairIBM·Filed 1986·Granted Jan 12, 1988·41 cites·23 claims
- 0872US4665007APlanarization process for organic filling of deep trenchesIBM·Filed 1985·Granted May 12, 1987·51 cites·10 claims
- 0971US4758528ASelf-aligned metal process for integrated circuit metallizationIBM·Filed 1986·Granted Jul 19, 1988·38 cites·23 claims
- 1066US4541168AMethod for making metal contact studs between first level metal and regions of a semiconductor device compatible with polyimide-filled deep trench isolation schemesIBM·Filed 1984·Granted Sep 17, 1985·32 cites·10 claims
- 1164US4824797ASelf-aligned channel stopIBM·Filed 1985·Granted Apr 25, 1989·29 cites·13 claims
- 1264US4717678AMethod of forming self-aligned P contactIBM·Filed 1986·Granted Jan 5, 1988·30 cites·20 claims
- 1361US4691219ASelf-aligned polysilicon base contact structureIBM·Filed 1986·Granted Sep 1, 1987·26 cites·1 claims
- 1460US4151010AForming adjacent impurity regions in a semiconductor by oxide maskingIBM·Filed 1978·Granted Apr 24, 1979·17 cites·23 claims
- 1556US6021360AProcess controller for balancing usage of tool setsIBM·Filed 1997·Granted Feb 1, 2000·23 cites·19 claims
- 1651US4743565ALateral device structures using self-aligned fabrication techniquesIBM·Filed 1986·Granted May 10, 1988·18 cites·15 claims
- 1747US6518145B1Methods to control the threshold voltage of a deep trench corner deviceIBM·Filed 1998·Granted Feb 11, 2003·10 cites·10 claims
- 1846US6967375B2Reduction of chemical mechanical planarization (CMP) scratches with sacrificial dielectric polish stopIBM·Filed 2004·Granted Nov 22, 2005·2 cites·20 claims
- 1944US5976982AMethods for protecting device components from chemical mechanical polish induced defectsSIEMENS AG·Filed 1997·Granted Nov 2, 1999·12 cites·19 claims
- 2044US4608589ASelf-aligned metal structure for integrated circuitsIBM·Filed 1983·Granted Aug 26, 1986·11 cites·16 claims
- 2138US4688073ALateral device structures using self-aligned fabrication techniquesGOTH GEORGE R·Filed 1986·Granted Aug 18, 1987·11 cites·20 claims
- 2235US2002179997A1Self-aligned corner Vt enhancement with isolation channel stop by ion implantationIBM·Filed 2001·Application pending·0 cites
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