Inventor · disambiguated record
Johannes A. Appels
Also filed as: APPELS JOHANNES A
16 granted patents·359 citations·filing 1978–1990
95Inventor score
Files withPHILIPS CORP16
Top patents by PatentIndex Score
16 records- 0193US4292642ASemiconductor devicePHILIPS CORP·Filed 1979·Granted Sep 29, 1981·70 cites·33 claims
- 0287US4422089ASemiconductor device having a reduced surface field strengthPHILIPS CORP·Filed 1980·Granted Dec 20, 1983·50 cites·21 claims
- 0376US4514251AMethod of manufacturing a semiconductor device, in which patterns are formed in a layer of silicon nitride by means of ion implantationPHILIPS CORP·Filed 1984·Granted Apr 30, 1985·41 cites·17 claims
- 0472US4233617AField effect transistor with insulated gate electrodePHILIPS CORP·Filed 1979·Granted Nov 11, 1980·19 cites·8 claims
- 0562US4449287AMethod of providing a narrow groove or slot in a substrate region, in particular a semiconductor substrate regionPHILIPS CORP·Filed 1982·Granted May 22, 1984·24 cites·20 claims
- 0658US4750971AMethod of manufacturing a semiconductor devicePHILIPS CORP·Filed 1987·Granted Jun 14, 1988·21 cites·3 claims
- 0757US4409606AHigh breakdown voltage semiconductor devicePHILIPS CORP·Filed 1981·Granted Oct 11, 1983·23 cites·12 claims
- 0855US4146905ASemiconductor device having complementary transistor structures and method of manufacturing samePHILIPS CORP·Filed 1978·Granted Mar 27, 1979·19 cites·3 claims
- 0954US4689872AMethod of manufacturing a semiconductor devicePHILIPS CORP·Filed 1985·Granted Sep 1, 1987·21 cites·4 claims
- 1052US4659428AMethod of manufacturing a semiconductor device and semiconductor device manufactured by means of the methodPHILIPS CORP·Filed 1986·Granted Apr 21, 1987·17 cites·12 claims
- 1148US4717689AMethod of forming semimicron grooves in semiconductor materialPHILIPS CORP·Filed 1985·Granted Jan 5, 1988·16 cites·35 claims
- 1246US4619039AMethod of manufacturing a semiconductor device and device manufactured by the use of the methodPHILIPS CORP·Filed 1984·Granted Oct 28, 1986·9 cites·7 claims
- 1345US4574468AMethod of manufacturing a semiconductor device having narrow coplanar silicon electrodesPHILIPS CORP·Filed 1984·Granted Mar 11, 1986·11 cites·6 claims
- 1437US4545110AMethod of manufacturing an insulated gate field effect devicePHILIPS CORP·Filed 1984·Granted Oct 8, 1985·8 cites·16 claims
- 1535US5008209AMethod of manufacturing a semiconductor device including outdiffusion from polysilicon rimsPHILIPS CORP·Filed 1990·Granted Apr 16, 1991·7 cites·6 claims
- 1631US4636826ACharge coupled devices having narrow coplanar silicon electrodesPHILIPS CORP·Filed 1985·Granted Jan 13, 1987·3 cites·4 claims
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