Inventor · disambiguated record
Gil Hwan Son
Also filed as: SON GIL-HWAN
8 granted patents·1 pending application·9 citations·filing 2008–2024
78Inventor score
Files withSAMSUNG ELECTRONICS CO LTD9
Top patents by PatentIndex Score
9 records- 0195US11881455B2Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 23, 2024·5 cites·8 claims
- 0293US12125788B2Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 22, 2024·2 cites·11 claims
- 0389US11769728B2Backside power distribution network semiconductor package and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 26, 2023·2 cites·9 claims
- 0472US12262560B2Integrated circuit devices including transistor stacks having different threshold voltages and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Mar 25, 2025·0 cites·11 claims
- 0571US11804540B2Vertical field effect transistor (VFET) structure with dielectric protection layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 31, 2023·0 cites·20 claims
- 0670US12142564B2Backside power distribution network semiconductor package and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·11 claims
- 0763US11538924B2Vertical field effect transistor (VFET) structure with dielectric protection layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 27, 2022·0 cites·6 claims
- 0861US11923365B2Integrated circuit devices including transistor stacks having different threshold voltages and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·11 claims
- 0939US2008305572A1Method of fabricating image device having capacitor and image device fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →