Inventor · disambiguated record
Sung Man Whang
Also filed as: WHANG SUNG MAN
8 granted patents·1 pending application·140 citations·filing 2001–2023
84Inventor score
Files withSAMSUNG ELECTRONICS CO LTD9
Top patents by PatentIndex Score
9 records- 0195US12294005B2Semiconductor device having a plurality of channel layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted May 6, 2025·1 cites·17 claims
- 0294US11705503B2Semiconductor device including non-sacrificial gate spacers and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 18, 2023·3 cites·18 claims
- 0392US6541328B2Method of fabricating metal oxide semiconductor transistor with lightly doped impurity regions formed after removing spacers used for defining higher density impurity regionsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 1, 2003·125 cites·25 claims
- 0489US10396205B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 27, 2019·7 cites·20 claims
- 0587US10833085B2Semiconductor device having a plurality of channel layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 10, 2020·4 cites·20 claims
- 0679US11862639B2Semiconductor device having a plurality of channel layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·19 claims
- 0772US11437377B2Method of manufacturing semiconductor device having a plurality of channel layersSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·7 claims
- 0851US2019198639A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
- 0943US9905645B2Vertical field effect transistor having an elongated channelSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 27, 2018·0 cites·15 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →