Inventor · disambiguated record
Yon Sup Pang
Also filed as: PANG YON SUP
12 granted patents·31 citations·filing 2010–2023
87Inventor score
Top patents by PatentIndex Score
12 records- 0189US9666700B2Vertical bipolar junction transistor and manufacturing method thereofMAGNACHIP SEMICONDUCTOR LTD·Filed 2014·Granted May 30, 2017·7 cites·21 claims
- 0288US10566465B2Semiconductor device comprising Schottky barrier diodesMAGNACHIP SEMICONDUCTOR LTD·Filed 2018·Granted Feb 18, 2020·5 cites·19 claims
- 0385US10586863B2Low-cost semiconductor device manufacturing methodMAGNACHIP SEMICONDUCTOR LTD·Filed 2017·Granted Mar 10, 2020·4 cites·16 claims
- 0485US9705010B2Schottky diode having floating guard ringsMAGNACHIP SEMICONDUCTOR LTD·Filed 2015·Granted Jul 11, 2017·5 cites·20 claims
- 0584US10923603B2Semiconductor device comprising Schottky barrier diodesKEY FOUNDRY CO LTD·Filed 2019·Granted Feb 16, 2021·3 cites·17 claims
- 0681US9691893B2Low-cost semiconductor device manufacturing methodMAGNACHIP SEMICONDUCTOR LTD·Filed 2014·Granted Jun 27, 2017·4 cites·14 claims
- 0774US12046629B2Semiconductor device with increased isolation breakdown voltageSK KEYFOUNDRY INC·Filed 2023·Granted Jul 23, 2024·0 cites·15 claims
- 0871US11756992B1Semiconductor device with increased isolation breakdown voltageKEY FOUNDRY CO LTD·Filed 2022·Granted Sep 12, 2023·0 cites·15 claims
- 0967US9111959B2Semiconductor device and manufacture method thereofMAGNACHIP SEMICONDUCTOR LTD·Filed 2013·Granted Aug 18, 2015·2 cites·22 claims
- 1062US12349452B2Bipolar-CMOS-DMOS semiconductor device having a deep trench isolation structure for high isolation breakdown voltageSK KEYFOUNDRY INC·Filed 2022·Granted Jul 1, 2025·0 cites·17 claims
- 1152US8674442B2Semiconductor device and manufacturing method thereofPANG YON-SUP·Filed 2010·Granted Mar 18, 2014·1 cites·18 claims
- 1244US9105721B2Semiconductor device and manufacturing method thereofMAGNACHIP SEMICONDUCTOR LTD·Filed 2014·Granted Aug 11, 2015·0 cites·19 claims
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