Inventor · disambiguated record
Shinji Odanaka
Also filed as: ODANAKA SHINJI
46 granted patents·1 pending application·1,588 citations·filing 1988–2008
99Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD43MATSUSHITA ELECTRIC CO LTD1MATSUSHITA ELECTRIC IND CO LD1MATSUSHITA ELECTRONICS CORP1MISAKA AKIO1
Top patents by PatentIndex Score
47 records- 0199US6691297B1Method for planning layout for LSI pattern, method for forming LSI pattern and method for generating mask data for LSIMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Feb 10, 2004·348 cites·10 claims
- 0298US7103870B2Method for planning layout for LSI pattern, method for forming LSI pattern and method for generating mask data for LSIMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Sep 5, 2006·220 cites·12 claims
- 0395US7091093B1Method for fabricating a semiconductor device having a pocket dopant diffused layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Aug 15, 2006·102 cites·9 claims
- 0494US7404165B2Method for planning layout for LSI pattern, method for forming LSI pattern and method for generating mask data for LSIMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Jul 22, 2008·14 cites·11 claims
- 0593US6333217B1Method of forming MOSFET with channel, extension and pocket implantsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Dec 25, 2001·59 cites·9 claims
- 0688US6432802B1Method for fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Aug 13, 2002·42 cites·19 claims
- 0787US6538275B2Nonvolatile semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Mar 25, 2003·39 cites·8 claims
- 0887US6380585B1Nonvolatile semiconductor device capable of increased electron injection efficiencyMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Apr 30, 2002·37 cites·7 claims
- 0985US8095894B2Changing a design rule for forming LSI pattern based on evaluating effectiveness of optical proximity corrected patternsMISAKA AKIO·Filed 2008·Granted Jan 10, 2012·11 cites·13 claims
- 1085US6051860ANonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuitMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Apr 18, 2000·50 cites·7 claims
- 1179US6358799B2Nonvolatile semiconductor memory device and method for fabricating the same, and semiconductor integrated circuit deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Mar 19, 2002·20 cites·13 claims
- 1277US5512771AMOS type semiconductor device having a low concentration impurity diffusion regionMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Apr 30, 1996·65 cites·5 claims
- 1376US6312981B1Method for manufacturing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Nov 6, 2001·19 cites·34 claims
- 1476US5830788AMethod for forming complementary MOS device having asymmetric region in channel regionMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Nov 3, 1998·45 cites·14 claims
- 1576US5808347AMIS transistor with gate sidewall insulating layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Sep 15, 1998·34 cites·12 claims
- 1676US5026658AMethod of making a trench capacitor dram cellMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1989·Granted Jun 25, 1991·30 cites·6 claims
- 1775US6545312B2Nonvolatile semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Apr 8, 2003·16 cites·7 claims
- 1873US5296719AQuantum device and fabrication method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Mar 22, 1994·51 cites·9 claims
- 1969US5221632AMethod of proudcing a MIS transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Jun 22, 1993·26 cites·3 claims
- 2069US5160996AStructure and method of manufacture for semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Nov 3, 1992·40 cites·5 claims
- 2167US6642572B2Nonvolatile semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 4, 2003·10 cites·7 claims
- 2266US4920390ASemiconductor memory device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1988·Granted Apr 24, 1990·21 cites·13 claims
- 2365US5610430ASemiconductor device having reduced gate overlapping capacitanceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Mar 11, 1997·31 cites·7 claims
- 2464US6184553B1Nonvolatile semiconductor memory device and method for fabricating the same, and semiconductor integrated circuit deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Feb 6, 2001·18 cites·21 claims
- 2564US6147379ASemiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Nov 14, 2000·23 cites·18 claims
- 2664US5633211ASemiconductor device and processMATSUSHITA ELECTRIC IND CO LD·Filed 1994·Granted May 27, 1997·37 cites·14 claims
- 2763US6921933B2Semiconductor device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jul 26, 2005·6 cites·9 claims
- 2859US6121655ANonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuitMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Sep 19, 2000·16 cites·11 claims
- 2957US6667216B2Semiconductor device and method of fabricating the sameMATSUSHITA ELECTRONICS CORP·Filed 2001·Granted Dec 23, 2003·4 cites·6 claims
- 3057US6355963B1MOS type semiconductor device having an impurity diffusion layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Mar 12, 2002·5 cites·6 claims
- 3156US6031268AComplementary semiconductor device and method for producing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Feb 29, 2000·18 cites·11 claims
- 3256US5292671AMethod of manufacture for semiconductor device by forming deep and shallow regionsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Mar 8, 1994·24 cites·12 claims
- 3355US5675168AUnsymmetrical MOS device having a gate insulator area offset from the source and drain areas, and ESD protection circuit including such a MOS deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Oct 7, 1997·16 cites·5 claims
- 3455US5386133ALDD FET with polysilicon sidewallsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Jan 31, 1995·14 cites·2 claims
- 3553US6251718B1Method for manufacturing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Jun 26, 2001·12 cites·20 claims
- 3652US5514893ASemiconductor device for protecting an internal circuit from electrostatic damageMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted May 7, 1996·14 cites·35 claims
- 3751US6031272AMOS type semiconductor device having an impurity diffusion layer with a nonuniform impurity concentration profile in a channel regionMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Feb 29, 2000·15 cites·11 claims
- 3850US2006202287A1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 3948US5518944AMOS transistor and its fabricating methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted May 21, 1996·10 cites·3 claims
- 4047US6828621B2Nonvolatile semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Dec 7, 2004·2 cites·8 claims
- 4146US6982456B2Nonvolatile semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC CO LTD·Filed 2004·Granted Jan 3, 2006·2 cites·7 claims
- 4246US6784040B2Nonvolatile semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Aug 31, 2004·2 cites·59 claims
- 4342US6770931B2Nonvolatile semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Aug 3, 2004·1 cites·8 claims
- 4441US5584964AMethod of producing semiconductor device with viscous flow of silicon oxideMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Dec 17, 1996·7 cites·11 claims
- 4538US6303438B1Method for manufacturing a nonvolatile semiconductor memory device having increased hot electron injection efficiencyMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Oct 16, 2001·5 cites·7 claims
- 4636US5455205AMethod of producing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Oct 3, 1995·7 cites·6 claims
- 4733US6803623B2Nonvolatile semiconductor memory device which can operate at high speed with low voltage, and manufacturing method thereMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Oct 12, 2004·0 cites·18 claims
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