Inventor · disambiguated record
Monte Manning
Also filed as: MANNING MONTE
157 granted patents·3 pending applications·3,809 citations·filing 1990–2005
99Inventor score
Top patents by PatentIndex Score
160 records- 0198US5670794AThin film transistorsMICRON TECHNOLOGY INC·Filed 1996·Granted Sep 23, 1997·185 cites·8 claims
- 0296US5392245ARedundancy elements using thin film transistors (TFTs)MICRON TECHNOLOGY INC·Filed 1993·Granted Feb 21, 1995·112 cites·32 claims
- 0394US5644540ARedundancy elements using thin film transistors (TFTs)MICRON TECHNOLOGY INC·Filed 1995·Granted Jul 1, 1997·91 cites·26 claims
- 0494US5275965ATrench isolation using gated sidewallsMICRON SEMICONDUCTOR INC·Filed 1992·Granted Jan 4, 1994·171 cites·57 claims
- 0593US5978258AMOS diode for use in a non-volatile memory cell backgroundMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 2, 1999·92 cites·25 claims
- 0693US5616934AFully planarized thin film transistor (TFT) and process to fabricate sameMICRON TECHNOLOGY INC·Filed 1996·Granted Apr 1, 1997·147 cites·40 claims
- 0793US5422499ASixteen megabit static random access memory (SRAM) cellMICRON SEMICONDUCTOR INC·Filed 1993·Granted Jun 6, 1995·114 cites·7 claims
- 0893US5177028ATrench isolation method having a double polysilicon gate formed on mesasMICRON TECHNOLOGY INC·Filed 1991·Granted Jan 5, 1993·152 cites·20 claims
- 0991US5420061AMethod for improving latchup immunity in a dual-polysilicon gate processMICRON SEMICONDUCTOR INC·Filed 1993·Granted May 30, 1995·86 cites·38 claims
- 1090US5729055AIntegrated circuitry having a thin film polysilicon layer in ohmic contact with a conductive layerMICRON TECHNOLOGY INC·Filed 1996·Granted Mar 17, 1998·90 cites·16 claims
- 1189US5334862AThin film transistor (TFT) loads formed in recessed plugsMICRON SEMICONDUCTOR INC·Filed 1993·Granted Aug 2, 1994·79 cites·36 claims
- 1288US5744846ASRAM cell employing substantially vertically elongated pull-up resistors and methods of making, and resistor constructions and methods of makingMICRON TECHNOLOGY INC·Filed 1997·Granted Apr 28, 1998·47 cites·25 claims
- 1388US5411909AMethod of forming a planar thin film transistorMICRON TECHNOLOGY INC·Filed 1993·Granted May 2, 1995·56 cites·10 claims
- 1487US7208836B2Integrated circuitry and a semiconductor processing method of forming a series of conductive linesMICRON TECHNOLOGY INC·Filed 2003·Granted Apr 24, 2007·34 cites·4 claims
- 1587US5812441AMOS diode for use in a non-volatile memory cellMICRON TECHNOLOGY INC·Filed 1996·Granted Sep 22, 1998·58 cites·4 claims
- 1687US5177030AMethod of making self-aligned vertical intrinsic resistanceMICRON TECHNOLOGY INC·Filed 1991·Granted Jan 5, 1993·67 cites·19 claims
- 1787US5159430AVertically integrated oxygen-implanted polysilicon resistorMICRON TECHNOLOGY INC·Filed 1991·Granted Oct 27, 1992·68 cites·17 claims
- 1886US6319800B1Static memory cellMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 20, 2001·23 cites·39 claims
- 1986US5567644AMethod of making a resistorMICRON TECHNOLOGY INC·Filed 1995·Granted Oct 22, 1996·50 cites·22 claims
- 2085US5390143ANon-volatile static memory devices and operational methodsMICRON SEMICONDUCTOR INC·Filed 1993·Granted Feb 14, 1995·56 cites·14 claims
- 2185US5385854AMethod of forming a self-aligned low density drain inverted thin film transistorMICRON SEMICONDUCTOR INC·Filed 1993·Granted Jan 31, 1995·61 cites·26 claims
- 2284US6200835B1Methods of forming conductive polysilicon lines and bottom gated thin film transistors, and conductive polysilicon lines and thin film transistorsMICRON TECHNOLOGY INC·Filed 1999·Granted Mar 13, 2001·37 cites·11 claims
- 2384US5818750AStatic memory cellMICRON TECHNOLOGY INC·Filed 1996·Granted Oct 6, 1998·34 cites·31 claims
- 2483US5844254APlanar thin film transistor structuresMICRON TECHNOLOGY INC·Filed 1997·Granted Dec 1, 1998·33 cites·4 claims
- 2582US5346836AProcess for forming low resistance contacts between silicide areas and upper level polysilicon interconnectsMICRON TECHNOLOGY INC·Filed 1993·Granted Sep 13, 1994·74 cites·12 claims
- 2682US5292676ASelf-aligned low resistance buried contact processMICRON SEMICONDUCTOR INC·Filed 1992·Granted Mar 8, 1994·60 cites·2 claims
- 2782US5055426AMethod for forming a multilevel interconnect structure on a semiconductor waferMICRON TECHNOLOGY INC·Filed 1990·Granted Oct 8, 1991·72 cites·18 claims
- 2881US5552743AThin film transistor redundancy structureMICRON TECHNOLOGY INC·Filed 1994·Granted Sep 3, 1996·31 cites·15 claims
- 2981US5232865AMethod of fabricating vertically integrated oxygen-implanted polysilicon resistorMICRON TECHNOLOGY INC·Filed 1992·Granted Aug 3, 1993·48 cites·7 claims
- 3081US5214295AThin film field effect transistor, CMOS inverter, and methods of forming thin film field effect transistors and CMOS invertersMICRON TECHNOLOGY INC·Filed 1992·Granted May 25, 1993·48 cites·18 claims
- 3180US6141239AStatic memory cellMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 31, 2000·28 cites·15 claims
- 3280US5998276AMethods of making a SRAM cell employing substantially vertically elongated pull-up resistors and methods of making resistor constructionsMICRON TEHNOLOGY INC·Filed 1997·Granted Dec 7, 1999·29 cites·6 claims
- 3380US5700733ASemiconductor processing methods of forming field oxide regions on a semiconductor substrateMICRON TECHNOLOGY INC·Filed 1995·Granted Dec 23, 1997·50 cites·9 claims
- 3480US5683930ASRAM cell employing substantially vertically elongated pull-up resistors and methods of making, and resistor constructions and methods of makingMICRON TECHNOLOGY INC·Filed 1995·Granted Nov 4, 1997·29 cites·29 claims
- 3578US5681778ASemiconductor processing method of forming a buried contact and conductive lineMICRON TECHNOLOGY INC·Filed 1995·Granted Oct 28, 1997·32 cites·22 claims
- 3678US5541137AMethod of forming improved contacts from polysilicon to silicon or other polysilicon layersMICRON SEMICONDUCTOR INC·Filed 1994·Granted Jul 30, 1996·35 cites·23 claims
- 3777US6759285B2Methods of forming transistorsMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 6, 2004·12 cites·6 claims
- 3877US5691565AIntegrated circuitry having a pair of adjacent conductive linesMICRON TECHNOLOGY INC·Filed 1996·Granted Nov 25, 1997·34 cites·6 claims
- 3976US5548132AThin film transistor with large grain size DRW offset region and small grain size source and drain and channel regionsMICRON TECHNOLOGY INC·Filed 1995·Granted Aug 20, 1996·32 cites·6 claims
- 4075US5286663AMethods for producing thin film transistor having a diode shuntMICRON TECHNOLOGY INC·Filed 1992·Granted Feb 15, 1994·38 cites·21 claims
- 4175US5241206ASelf-aligned vertical intrinsic resistanceMICRON TECHNOLOGY INC·Filed 1992·Granted Aug 31, 1993·36 cites·21 claims
- 4274US5940317AStatic memory cellMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 17, 1999·21 cites·20 claims
- 4374US5792700ASemiconductor processing method for providing large grain polysilicon filmsMICRON TECHNOLOGY INC·Filed 1996·Granted Aug 11, 1998·39 cites·11 claims
- 4474US5405788AMethod for forming and tailoring the electrical characteristics of semiconductor devicesMICRON TECHNOLOGY INC·Filed 1993·Granted Apr 11, 1995·31 cites·15 claims
- 4573US5939760ASRAM cell employing substantially vertically elongated pull-up resistors and methods of making, and resistor constructions and methods of makingMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 17, 1999·19 cites·22 claims
- 4673US5736440ASemiconductor processing method of forming complementary NMOS and PMOS field effect transistors on a substrateMICRON TECHNOLOGY INC·Filed 1995·Granted Apr 7, 1998·29 cites·48 claims
- 4773US5173754AIntegrated circuit device with gate in sidewallMICRON TECHNOLOGY INC·Filed 1992·Granted Dec 22, 1992·35 cites·18 claims
- 4872US5661045AMethod for forming and tailoring the electrical characteristics of semiconductor devicesMICRON TECHNOLOGY INC·Filed 1996·Granted Aug 26, 1997·28 cites·11 claims
- 4971US5930615AMethod of forming CMOS having simultaneous formation of halo regions of PMOS and part of source/drain of NMOSMICRON TECHNOLOGY INC·Filed 1998·Granted Jul 27, 1999·27 cites·19 claims
- 5070US6583042B2Semiconductor method of making electrical connection between an electrically conductive line and a node location, and integrated circuitryMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 24, 2003·11 cites·6 claims
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