Inventor · disambiguated record
Kazutoshi Hirayama
Also filed as: HIRAYAMA KAZUTOSHI
15 granted patents·321 citations·filing 1987–2001
94Inventor score
Files withMITSUBISHI ELECTRIC CORP15
Top patents by PatentIndex Score
15 records- 0191US6519194B2Semiconductor memory device with a rapid packet data input, capable of operation check with low speed testerMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 11, 2003·61 cites·3 claims
- 0281US4833650ASemiconductor memory device including programmable mode selection circuitryMITSUBISHI ELECTRIC CORP·Filed 1987·Granted May 23, 1989·39 cites·8 claims
- 0380US5663905ASemiconductor memory device comprising two kinds of memory cells operating in different access speeds and methods of operating and manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Sep 2, 1997·35 cites·44 claims
- 0474US6301190B1Semiconductor memory device with a rapid packet data input, capable of operation check with low speed testerMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 9, 2001·19 cites·5 claims
- 0571US4808844ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Feb 28, 1989·37 cites·13 claims
- 0666US5343429ASemiconductor memory device having redundant circuit and method of testing to see whether or not redundant circuit is used thereinMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Aug 30, 1994·26 cites·31 claims
- 0760US5111078AInput circuit for logic circuit having node and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1991·Granted May 5, 1992·20 cites·29 claims
- 0857US5781468ASemiconductor memory device comprising two kinds of memory cells operating in different access speeds and methods of operating and manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jul 14, 1998·13 cites·3 claims
- 0956US5666317ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 9, 1997·14 cites·3 claims
- 1056US5574691ASemiconductor memory device having circuit for activating predetermined rows of memory cells upon detection of disturb refresh testMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 12, 1996·14 cites·11 claims
- 1150US5519659ASemiconductor memory device having circuit for activating predetermined rows of memory cells upon detection of disturb refresh testMITSUBISHI ELECTRIC CORP·Filed 1995·Granted May 21, 1996·13 cites·3 claims
- 1242US5835434AInternal voltage generating circuit, semiconductor memory device, and method of measuring current consumption, capable of measuring current consumption without cutting wireMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 10, 1998·8 cites·13 claims
- 1342US5315551ASemiconductor memory device with precharging voltage level unchanged by defective memory cellMITSUBISHI ELECTRIC CORP·Filed 1991·Granted May 24, 1994·9 cites·8 claims
- 1441US5065365ASemiconductor memory device carrying out reading and writing operations in order in one operating cycle and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Nov 12, 1991·9 cites·10 claims
- 1536US4835743ASemiconductor memory device performing multi-bit Serial operationMITSUBISHI ELECTRIC CORP·Filed 1987·Granted May 30, 1989·4 cites·14 claims
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